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IXFN300N20X3

型号：

IXFN300N20X3

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

151 K

下载PDF手册
Preliminary Technical Information  
X3-Class HiPerFETTM  
Power MOSFET  
VDSS = 200V  
ID25 = 300A  
RDS(on) 3.5m  
IXFN300N20X3  
D
N-Channel Enhancement Mode  
Avalanche Rated  
G
S
miniBLOC, SOT-227  
E153432  
S
S
G
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
200  
200  
V
V
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
S
D
D = Drain  
ID25  
IL(RMS)  
IDM  
TC = 25C  
External Lead Current Limit  
TC = 25C, Pulse Width Limited by TJM  
300  
200  
700  
A
A
A
G = Gate  
S = Source  
IA  
EAS  
TC = 25C  
TC = 25C  
150  
3.5  
A
J
PD  
TC = 25C  
695  
20  
W
Features  
dv/dt  
IS IDM, VDD VDSS, TJ 150°C  
V/ns  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
International Standard Package  
miniBLOC, with Aluminium Nitride  
Isolation  
Isolation Voltage 2500V~  
High Current Handling Capability  
Avalanche Rated  
VISOL  
50/60 Hz, RMS  
IISOL 1mA  
t = 1 minute  
t = 1 second  
2500  
3000  
V~  
V~  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in  
Nm/lb.in  
Low RDS(on)  
Weight  
30  
g
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
200  
V
V
Applications  
2.5  
4.5  
Switch-Mode and Resonant-Mode  
Power Supplies  
200 nA  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
IDSS  
25 A  
1.5 mA  
TJ = 125C  
RDS(on)  
VGS = 10V, ID = 150A, Note 1  
3.5 m  
© 2017 IXYS CORPORATION, All Rights Reserved.  
DS100845B(9/17)  
IXFN300N20X3  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B (IXFN) Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 60A, Note 1  
Gate Input Resistance  
80  
135  
S
RGi  
1.8  
Ciss  
Coss  
Crss  
23.8  
4.0  
nF  
nF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
3.2  
Effective Output Capacitance  
Co(er)  
Co(tr)  
1640  
5640  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
VDS = 0.8 • VDSS  
td(on)  
tr  
td(off)  
tf  
44  
43  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 150A  
(M4 screws (4x) supplied)  
V
184  
13  
RG = 1(External)  
Qg(on)  
Qgs  
375  
117  
94  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 150A  
Qgd  
RthJC  
RthCS  
0.18 C/W  
C/W  
0.05  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
300  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
1200  
1.4  
V
trr  
QRM  
IRM  
172  
1.1  
12.8  
ns  
IF = 150A, -di/dt = 100A/μs  
μC  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFN300N20X3  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
300  
250  
200  
150  
100  
50  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
V
= 10V  
GS  
9V  
V
= 10V  
9V  
GS  
8V  
7V  
8V  
7V  
6V  
6V  
5V  
5V  
6
0
0
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
0
2
4
8
10  
12  
14  
16  
18  
20  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 150A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
300  
250  
200  
150  
100  
50  
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
I
= 300A  
D
I
= 150A  
D
7V  
6V  
5V  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.4  
0.8  
1.2  
1.6  
2
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 150A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
V
= 10V  
GS  
BV  
DSS  
o
T = 125 C  
J
o
V
T = 25 C  
GS(th)  
J
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
100  
200  
300  
400  
500  
600  
700  
800  
900  
TJ - Degrees Centigrade  
ID - Amperes  
© 2017 IXYS CORPORATION, All Rights Reserved.  
IXFN300N20X3  
Fig. 7. Maximum Drain Current vs. Case Temperature  
Fig. 8. Input Admittance  
400  
350  
300  
250  
200  
150  
100  
50  
220  
200  
180  
160  
140  
120  
100  
80  
External Lead Current Limit  
o
T
J
= 125 C  
o
25 C  
60  
o
- 40 C  
40  
20  
0
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
-50  
-25  
0
25  
50  
75  
100  
125  
350  
350  
150  
400  
400  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
Fig. 9. Transconductance  
400  
350  
300  
250  
200  
150  
100  
50  
800  
700  
600  
500  
400  
300  
200  
100  
0
o
T = - 40 C  
J
o
25 C  
o
125 C  
o
T = 125 C  
J
o
T = 25 C  
J
0
0
50  
100  
150  
200  
250  
300  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
VSD - Volts  
ID - Amperes  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
100,000  
10,000  
1,000  
100  
10  
9
8
7
6
5
4
3
2
1
0
V
= 100V  
DS  
C
C
iss  
I
I
= 150A  
= 10mA  
D
G
oss  
C
rss  
10  
= 1 MHz  
f
1
0
50  
100  
150  
200  
250  
300  
1
10  
100  
1,000  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFN300N20X3  
Fig. 13. Output Capacitance Stored Energy  
Fig. 14. Forward-Bias Safe Operating Area  
30  
25  
20  
15  
10  
5
1000  
100  
10  
R
Limit  
)
DS(  
on  
25μs  
100μs  
External Lead  
Current Limit  
1ms  
10ms  
1
o
T = 150 C  
J
100ms  
o
DC  
T
C
= 25 C  
Single Pulse  
0
0.1  
0
50  
100  
150  
200  
1
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
aaaaa  
0.3  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2017 IXYS CORPORATION, All Rights Reserved.  
IXYS REF: F_300N20X3(29-S202) 6-22-17  
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