UPS3100e3
3 A High Voltage Schottky Barrier Rectifier
KEY FEATURES
DESCRIPTION
This UPS3100e3 in the Powermite3® package is a high efficiency Schottky
rectifier that is also RoHS compliant offering high current/power capabilities
previously found only in much larger packages. They are ideal for SMD
applications that operate at high frequencies. In addition to its size
advantages, the Powermite3® package includes a full metallic bottom that
eliminates the possibility of solder flux entrapment during assembly and a
unique locking tab act as an efficient heat path to the heat-sink mounting.
Its innovative design makes this device ideal for use with automatic
insertion equipment.
Very low thermal resistance package
RoHS Compliant with e3 suffix part number
Guard-ring-die construction for transient
protection
Efficient heat path with Integral locking
bottom metal tab
Low forward voltage
Full metallic bottom eliminates flux
entrapment
Compatible with automatic insertion
Low profile-maximum height of 1mm
Options for screening in accordance with
MIL-PRF-19500 for JAN, JANTX, JANTXV,
and JANS are available by adding MQ, MX,
MV, or MSP prefixes respectively to part
numbers. For example, designate
MXUPS3100e3 for a JANTX (consult factory
for Tin-Lead plating).
IMPORTANT: For themost current data, consultMICROSEMI’s website: http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Symbol
Value
Unit
Optional 100% avionics screening available
by adding MA prefix for 100% temperature
cycle, thermal impedance and 24 hours
HTRB (consult factory for Tin-Lead plating)
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
100
V
RMS Reverse Voltage
70
3
V
A
VR(RMS)
Io
APPLICATIONS/BENEFITS
Average Rectified Output Current
Switching and Regulating Power Supplies.
Silicon Schottky (hot carrier) rectifier for
minimal reverse voltage recovery
Elimination of reverse-recovery oscillations
to reduce need for EMI filtering
Charge Pump Circuits
Reduces reverse recovery loss with low IRM
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on Rated Load@ Tc =90 ºC
50
A
IFSM
Storage Temperature
Junction Temperature
-55 to +150
-55 to +125
ºC
ºC
TSTG
TJ
THERMAL CHARACTERISTICS
Small foot print
190 X 270 mils (1:1 Actual size)
See mounting pad details on pg 3
Thermal Resistance
Junction-to-Case (bottom)
Junction to Ambient (1)
RθJC
RθJA
2.5
65
ºC/ Watt
ºC/ Watt
MECHANICAL & PACKAGING
(1) When mounted on FR-4 PC board using 2 oz copper with recommended minimum foot print
• CASE: Void-free transfer molded
thermosetting epoxy compound meeting
UL94V-0
Powermite 3™
• FINISH: Annealed matte-Tin plating over
copper and readily solderable per MIL-
STD-750 method 2026 (consult factory for
Tin-Lead plating)
• POLARITY: See figure (left)
• MARKING: S3100•
• WEIGHT: 0.072 gram (approx.)
• Package dimension on last page
• Tape & Reel option: 16 mm tape per
Standard EIA-481-B, 5000 on 13” reel
Copyright © 2005
5-31-2005 Rev B
Microsemi
Page 1
