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IXFX120N30P3

型号：

IXFX120N30P3

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

134 K

下载PDF手册
Preliminary Technical Information  
Polar3TM HiPerFETTM  
Power MOSFET  
VDSS = 300V  
ID25 = 120A  
RDS(on) 27m  
IXFK120N30P3  
IXFX120N30P3  
trr  
250ns  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-264 (IXFK)  
Fast Intrinsic Diode  
G
D
S
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
300  
300  
V
V
Tab  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
PLUS247 (IXFX)  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
120  
300  
A
A
IA  
EAS  
TC = 25C  
TC = 25C  
60  
3
A
J
G
D
S
Tab  
PD  
TC = 25C  
1130  
35  
W
G = Gate  
S = Source  
D
= Drain  
dv/dt  
IS IDM, VDD VDSS, TJ 150°C  
V/ns  
Tab = Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Dynamic dv/dt Rating  
Avalanche Rated  
Fast Intrinsic Diode  
Low QG  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in  
N/lb  
20..120 /4.5..27  
Low RDS(on)  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Low Drain-to-Tab Capacitance  
Low Package Inductance  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
Easy to Mount  
Space Savings  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 4mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
300  
V
V
Applications  
3.0  
5.0  
DC-DC Converters  
Battery Chargers  
200 nA  
IDSS  
25 A  
Switch-Mode and Resonant-Mode  
TJ = 125C  
750 A  
Power Supplies  
Uninterrupted Power Supplies  
AC Motor Drives  
High Speed Power Switching  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
27 m  
Applications  
© 2013 IXYS CORPORATION, All Rights Reserved  
DS100481A(12/13)  
IXFK120N30P3  
IXFX120N30P3  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 AA Outline  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate Input Resistance  
54  
90  
S
Ciss  
Coss  
Crss  
8630  
1406  
20  
pF  
pF  
pF  
RGi  
1.5  
  
: 1 - Gate  
2 - Drain  
td(on)  
tr  
td(off)  
tf  
26  
13  
60  
11  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1(External)  
3 - Source  
4 - Drain  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
b
b1  
b2  
c
D
E
e
J
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
Qg(on)  
Qgs  
150  
40  
nC  
nC  
nC  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
0.53  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
Qgd  
53  
25.91 26.16  
19.81 19.96  
5.46 BSC  
RthJC  
RthCS  
0.11C/W  
0.15C/W  
.215 BSC  
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
K
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
Source-Drain Diode  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
120  
480  
1.5  
PLUS 247TM Outline  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS , VGS = 0V, Note 1  
trr  
250  
ns  
μC  
A
IF = 60A, -di/dt = 100A/s  
QRM  
IRM  
2.2  
VR = 100V, VGS = 0V  
19.6  
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
PRELIMANARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFK120N30P3  
IXFX120N30P3  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
120  
100  
80  
60  
40  
20  
0
280  
240  
200  
160  
120  
80  
V
= 10V  
9V  
GS  
V
= 10V  
9V  
GS  
8V  
7V  
6V  
8V  
7V  
6V  
40  
0
0
0.5  
1
1.5  
2
2.5  
3
0
5
10  
15  
20  
25  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 60A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
120  
100  
80  
60  
40  
20  
0
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
8V  
GS  
V
= 10V  
GS  
7V  
I
= 120A  
D
I
= 60A  
D
6V  
5V  
0
1
2
3
4
5
6
7
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 60A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
140  
120  
100  
80  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
V
= 10V  
GS  
T = 125ºC  
J
60  
40  
T = 25ºC  
J
20  
0
0
40  
80  
120  
160  
200  
240  
280  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXFK120N30P3  
IXFX120N30P3  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
160  
140  
120  
100  
80  
180  
160  
140  
120  
100  
80  
T
J
= - 40ºC  
T
J
= 125ºC  
25ºC  
25ºC  
- 40ºC  
125ºC  
60  
60  
40  
40  
20  
20  
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
350  
300  
250  
200  
150  
100  
50  
10  
9
8
7
6
5
4
3
2
1
0
V
= 150V  
DS  
I
I
= 60A  
D
G
= 10mA  
T
J
= 125ºC  
T
= 25ºC  
1.0  
J
0
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.1  
1.2  
1.3  
1.4  
0
20  
40  
60  
80  
100  
120  
140  
160  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
1000  
100  
10  
100,000  
10,000  
1,000  
100  
R
Limit  
DS(on)  
= 1 MHz  
f
25µs  
C
iss  
100µs  
C
C
oss  
rss  
1ms  
T = 150ºC  
J
T
= 25ºC  
C
Single Pulse  
10  
1
0
5
10  
15  
20  
25  
30  
35  
40  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFK120N30P3  
IXFX120N30P3  
Fig. 13. Maximum Transient Thermal Impedance  
AAAAA  
0.2  
0.1  
0.01  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_120N30P3(K8) 6-25-12  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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