IXFY4N60P3 IXFA4N60P3
IXFP4N60P3
Symbol
Test Conditions
Characteristic Values
TO-252 Outline
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
Gate Input Resistance
2.2
3.7
S
RGi
6.0
Ciss
Coss
Crss
365
46
3
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
1. Gate
2. Drain
3. Source
4. Drain
Bottom Side
td(on)
tr
td(off)
tf
15
24
24
23
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 30 (External)
Dim. Millimeter
Min. Max.
Inches
Min. Max.
Qg(on)
Qgs
6.9
1.7
2.8
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
A
A1
2.19 2.38 0.086 0.094
0.89 1.14 0.035 0.045
Qgd
A2
b
0
0.13
0
0.005
0.64 0.89 0.025 0.035
RthJC
RthCS
1.10 C/W
C/W
b1
b2
0.76 1.14 0.030 0.045
5.21 5.46 0.205 0.215
TO-220
0.50
c
c1
0.46 0.58 0.018 0.023
0.46 0.58 0.018 0.023
D
D1
5.97 6.22 0.235 0.245
4.32 5.21 0.170 0.205
Source-Drain Diode
E
E1
6.35 6.73 0.250 0.265
4.32 5.21 0.170 0.205
Symbol
Test Conditions
Characteristic Values
e
e1
2.28 BSC
4.57 BSC
0.090 BSC
0.180 BSC
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
H
L
9.40 10.42 0.370 0.410
0.51 1.02 0.020 0.040
IS
VGS = 0V, Note1
4
A
A
L1
L2
L3
0.64 1.02 0.025 0.040
0.89 1.27 0.035 0.050
2.54 2.92 0.100 0.115
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
16
1.4
V
trr
QRM
IRM
250
C
ns
TO-220 Outline
IF = 4A, -di/dt = 25A/μs
0.35
2.15
VR = 100V
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
TO-263 Outline
Pins: 1 - Gate
3 - Source
2 - Drain
1 = Gate
2 = Drain
3 = Source
4 = Drain
Bottom Side
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
