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VUB72-12NOXT

型号：

VUB72-12NOXT

品牌：

IXYS[ IXYS CORPORATION ]

页数：

8 页

PDF大小：

229 K

下载PDF手册
VUB72-12NOXT  
3~  
Rectifier  
Brake  
Chopper  
Standard Rectifier Module  
VRRM  
V V  
V
= 1200  
= 1200  
CES  
IDAV  
75 A IC25  
58 A  
=
=
=
IFSM  
600 A VCE(sat) 1.85 V  
=
3~ Rectifier Bridge + Brake Unit + NTC  
Part number  
VUB72-12NOXT  
Backside: isolated  
6
11  
12 10  
NTC  
1~  
7~  
9~  
5
2
4
V1-A-Pack  
Features / Advantages:  
Applications:  
Package:  
● Package with DCB ceramic base plate  
● Improved temperature and power cycling  
● Planar passivated chips  
● 3~ Rectifier with brake unit  
for drive inverters  
● Isolation Voltage:  
● Industry standard outline  
● RoHS compliant  
V~  
3600  
● Very low forward voltage drop  
● Very low leakage current  
● NTC  
● Soldering pins for PCB mounting  
● Height: 17 mm  
● Base plate: DCB ceramic  
● Reduced weight  
● Advanced power cycling  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130521c  
© 2013 IXYS all rights reserved  
VUB72-12NOXT  
Ratings  
Rectifier  
Conditions  
Symbol  
VRSM  
Definition  
min. typ. max. Unit  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 150°C  
TVJ = 25°C  
1300  
1200  
40  
V
V
max. non-repetitive reverse blocking voltage  
max. repetitive reverse blocking voltage  
VRRM  
IR  
reverse current  
VR = 1200 V  
VR = 1200 V  
µA  
1.5 mA  
forward voltage drop  
VF  
25  
1.10  
V
V
V
V
A
IF =  
A
1.38  
1.01  
1.37  
75  
IF = 75 A  
IF = 25 A  
IF = 75 A  
TC = 110°C  
rectangular  
TVJ  
=
°C  
125  
bridge output current  
TVJ = 150°C  
TVJ = 150°C  
IDAV  
d = ⅓  
VF0  
0.79  
V
threshold voltage  
slope resistance  
for power loss calculation only  
rF  
7.7 mΩ  
1.1 K/W  
K/W  
thermal resistance junction to case  
thermal resistance case to heatsink  
RthJC  
RthCH  
Ptot  
0.3  
TC = 25°C  
TVJ = 45°C  
VR = 0 V  
110  
600  
650  
510  
550  
W
A
A
A
A
total power dissipation  
max. forward surge current  
IFSM  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
VR = 400 V; f = 1 MHz  
TVJ = 150°C  
VR = 0 V  
value for fusing  
I²t  
TVJ = 45°C  
VR = 0 V  
1.80 kA²s  
1.76 kA²s  
1.30 kA²s  
1.26 kA²s  
pF  
TVJ = 150°C  
VR = 0 V  
CJ  
TVJ = 25°C  
19  
junction capacitance  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130521c  
© 2013 IXYS all rights reserved  
VUB72-12NOXT  
Ratings  
Brake IGBT  
Symbol  
VCES  
Definition  
collector emitter voltage  
Conditions  
min. typ. max. Unit  
TVJ  
=
25°C  
1200  
V
V
V
A
A
W
V
V
V
max. DC gate voltage  
VGES  
VGEM  
IC25  
±20  
max. transient gate emitter voltage  
collector current  
±30  
TC = 25°C  
TC = 80°C  
TC = 25°C  
TVJ = 25°C  
TVJ = 125°C  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 125°C  
58  
40  
IC  
80  
total power dissipation  
P
tot  
195  
collector emitter saturation voltage  
VCE(sat)  
IC = 35 A; V = 15 V  
1.85 2.15  
2.15  
GE  
gate emitter threshold voltage  
collector emitter leakage current  
VGE(th)  
ICES  
IC = 1.5 mA; VGE = VCE  
VCE = VCES; VGE = 0 V  
5.4  
5.9  
6.5  
0.1 mA  
mA  
0.1  
gate emitter leakage current  
total gate charge  
IGES  
VGE = ±20 V  
500  
nA  
nC  
ns  
QG(on)  
td(on)  
tr  
VCE = 600 V; V = 15 V; IC = 35 A  
110  
70  
GE  
turn-on delay time  
current rise time  
40  
ns  
inductive load  
TVJ = 125°C  
turn-off delay time  
td(off)  
t f  
250  
100  
3.8  
4.1  
ns  
VCE = 600 V; IC = 35A  
VGE = ±15 V; RG = 27 Ω  
current fall time  
ns  
turn-on energy per pulse  
turn-off energy per pulse  
reverse bias safe operating area  
Eon  
mJ  
mJ  
Eoff  
RBSOA  
ICM  
VGE = ±15 V; RG = 27 Ω  
TVJ = 125°C  
TVJ = 125°C  
VCEK = 1200 V  
105  
10  
A
short circuit safe operating area  
short circuit duration  
SCSOA  
tSC  
VCE = 900 V; V = ±15 V  
µs  
A
GE  
short circuit current  
ISC  
RG = 27 Ω; non-repetitive  
140  
thermal resistance junction to case  
thermal resistance case to heatsink  
RthJC  
RthCH  
0.65 K/W  
K/W  
0.25  
Brake Diode  
max. repetitive reverse voltage  
VRRM  
IF25  
IF80  
VF  
TVJ = 25°C  
TC = 25°C  
1200  
31  
V
A
A
V
V
forward current  
forward voltage  
reverse current  
21  
TC = 80°C  
TVJ = 25°C  
TVJ = 125°C  
TVJ = 25°C  
TVJ = 125°C  
IF = 25A  
VR = VRRM  
2.97  
2.43  
IR  
0.1 mA  
0.5 mA  
reverse recovery charge  
max. reverse recovery current  
reverse recovery time  
Qrr  
IRM  
trr  
VR = 600 V  
-diF /dt = 400 A/µs  
IF = 25A  
1.2  
18  
µC  
A
TVJ = 125°C  
130  
ns  
thermal resistance junction to case  
thermal resistance case to heatsink  
RthJC  
RthCH  
1.6 K/W  
K/W  
0.55  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130521c  
© 2013 IXYS all rights reserved  
VUB72-12NOXT  
Ratings  
Package V1-A-Pack  
Symbol  
IRMS  
Definition  
Conditions  
per terminal  
min. typ. max.  
100  
Unit  
A
°C  
°C  
g
RMS current  
Tstg  
-40  
-40  
125  
150  
storage temperature  
virtual junction temperature  
TVJ  
Weight  
MD  
37  
2
2.5 Nm  
mounting torque  
terminal to terminal  
terminal to backside  
dSpp/App  
dSpb/Apb  
6.0  
12.0  
mm  
mm  
V
creepage distance on surface | striking distance through air  
t = 1 second  
V
3600  
3000  
isolation voltage  
ISOL  
50/60 Hz, RMS; IISOL ≤ 1 mA  
t = 1 minute  
V
Date Code Location  
yywwA  
Part Number (Typ)  
Lot No.:  
2D Data Matrix  
Ordering  
Standard  
Part Number  
Marking on Product  
Delivery Mode  
Box  
Quantity Code No.  
VUB72-12NOXT  
VUB72-12NOXT  
10  
510734  
Similar Part  
Package  
Voltage class  
1600  
VUB72-16NOXT  
V1-A-Pack  
7000  
6000  
5000  
Temperature Sensor NTC  
Symbol Definition  
Conditions  
TVJ = 25°  
min. typ. max. Unit  
resistance  
R25  
2.13  
2.2  
2.27  
kΩ  
4000  
R
temperature coefficient  
3560  
B25/50  
K
[
]
2000  
1000  
0
TVJ = 150°C  
* on die level  
Equivalent Circuits for Simulation  
Rectifier  
Brake  
IGBT  
Brake  
Diode  
V0  
I
R0  
0
50  
100  
150  
TC [°C]  
threshold voltage  
slope resistance *  
V0 max  
R0 max  
0.79  
6.5  
1.1  
40  
1.16  
43  
V
Typ. NTC resistance vs. temperature  
mΩ  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130521c  
© 2013 IXYS all rights reserved  
VUB72-12NOXT  
Outlines V1-A-Pack  
+0,2  
1
1
15,8  
Ø0,5  
0,5  
4,6  
1
5
R2  
35  
63  
26  
31,6  
0,2  
50  
38,6  
0,3  
0,3  
14  
7
14  
0,3  
0,3  
7
4x45°  
R1  
0,15  
25,75  
0,5  
0,3  
51,5  
6
11  
12 10  
NTC  
1~  
7~  
9~  
5
2
4
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130521c  
© 2013 IXYS all rights reserved  
VUB72-12NOXT  
Rectifier  
500  
400  
300  
200  
100  
2000  
1600  
1200  
50 Hz  
VR = 0 V  
0.8 x V RRM  
80  
I2t  
TVJ = 45°C  
IF 60  
IFSM  
[A]  
TVJ = 45°C  
[A2s]  
[A]  
40  
TVJ = 150°C  
TVJ = 150°C  
800  
400  
TVJ  
=
20  
0
125°C  
150°C  
TVJ = 25°C  
10-3  
10-2  
10-1  
100  
0.4 0.6 0.8 1.0 1.2 1.4 1.6  
1
10  
t [ms]  
VF [V]  
t [s]  
Fig. 1 Forward current vs.  
voltage drop per diode  
Fig. 2 Surge overload current  
vs. time per diode  
Fig. 3 I2t vs. time per diode  
100  
80  
RthJA  
:
DC =  
1
0.5  
DC =  
1
32  
0.6 KW  
0.8 KW  
0.4  
0.5  
1
2
4
8
KW  
KW  
KW  
KW  
0.33  
0.17  
0.08  
0.4  
24  
16  
8
60  
0.33  
0.17  
0.08  
IF(AV)M  
[A]  
Ptot  
[W]  
40  
20  
0
0
0
4
8
12 16 20 24 28 32  
0
25  
50  
75 100 125 150 175  
0
25 50 75 100 125 150  
TA [°C]  
IdAVM [A]  
TC [°C]  
Fig. 4 Power dissipation vs. forward current  
and ambient temperature per diode  
Fig. 5 Max. forward current vs.  
case temperature per diode  
1.2  
1.0  
0.8  
ZthJC  
0.6  
[K/W]  
0.4  
Constants for ZthJC calculation:  
i
Rth (K/W)  
ti (s)  
1
2
3
4
5
0.0607  
0.1230  
0.2305  
0.4230  
0.2628  
0.0004  
0.00256  
0.0045  
0.0242  
0.1800  
0.2  
0.0  
1
10  
100  
1000  
10000  
t [ms]  
Fig. 6 Transient thermal impedance junction to case vs. time per diode  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130521c  
© 2013 IXYS all rights reserved  
VUB72-12NOXT  
Brake IGBT  
70  
70  
60  
70  
60  
13 V  
11 V  
VGE = 15 V  
VGE = 15 V  
60  
50  
40  
30  
20  
10  
0
17 V  
19 V  
50  
50  
IC 40  
IC 40  
TVJ = 25°C  
30  
30  
[A]  
[A]  
9 V  
TVJ = 125°C  
20  
10  
0
20  
10  
0
TVJ = 125°C  
TVJ = 25°C  
TVJ = 125°C  
0
1
2
3
0
1
2
3
4
5
5
6
7
8
9
10 11 12 13  
VGE [V]  
Fig. 3 Typ. tranfer characteristics  
VCE [V]  
VCE [V]  
Fig. 1 Typ. output characteristics  
Fig. 2 Typ. output characteristics  
20  
15  
10  
5
10  
8
6
5
4
3
Eon  
IC =  
CE = 600 V  
VGE 15 V  
TVJ = 125°C  
35 A  
IC  
= 35 A  
RG  
CE = 600 V  
VGE 15 V  
TVJ = 125°C  
=
27  
V
V
V
CE = 600 V  
=
Eon  
=
Eoff  
6
VGE  
[V]  
E
E
[mJ]  
[mJ]  
Eoff  
4
2
0
0
0
20 40 60 80 100 120 140  
0
20  
40  
60  
80  
20  
40  
60  
80  
QG [nC]  
IC [A]  
RG [ ]  
Fig. 4 Typ. turn-on gate charge  
Fig. 5 Typ. switching energy  
versus collector current  
Fig. 6 Typ. switching energy  
versus gate resistance  
1
0.1  
[K/W]  
0.01  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
[s]  
Fig. 7 Typ. transient thermal impedance  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130521c  
© 2013 IXYS all rights reserved  
VUB72-12NOXT  
Brake Diode  
50  
40  
30  
20  
10  
0
40  
35  
30  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
TVJ = 125°C  
VR = 800 V  
TVJ = 125°C  
VR = 800 V  
TVJ = 25°C  
100°C  
150°C  
IF = 30 A  
25  
IF = 30 A  
IRM  
[A]  
IF  
Qrr  
IF  
= 15 A  
IF  
20  
= 15 A  
IF  
= 7.5 A  
IF  
= 7.5 A  
[A]  
[μC]  
15  
10  
5
0
0
200 400 600 800 1000  
diF /dt [A/μs]  
0
1
2
3
4
100  
1000  
VF [V]  
diF /dt [A/μs]  
Fig. 3 Typ. peak reverse current  
IRM versus diF /dt  
Fig. 1 Forward current  
IF versus VF  
Fig. 2 Typ. reverse recov. charge  
Qr versus diF /dt  
2.0  
1.5  
1.0  
0.5  
0.0  
180  
160  
140  
120  
100  
120  
80  
1.2  
TVJ = 125°C  
VR = 800 V  
TVJ = 125°C  
IF = 15 A  
VR = 800 V  
0.8  
trr  
IF = 30 A  
VFR  
[V]  
Kf  
IF  
= 15 A  
[µs]  
0.4  
[ns]  
IF  
= 7.5 A  
40  
0
IRM  
Qr  
0
40  
80  
120  
160  
0
200 400 600 800 1000  
0
200 400 600 800 1000  
diF /dt [A/μs]  
-diF /dt [A/μs]  
TVJ [°C]  
Fig. 4 Dynamic parameters  
Qr, I RM versus TVJ  
Fig. 5 Typ. recovery time  
trr versus diF/dt  
Fig. 6 Typ. peak forward voltage  
VFR and tfr versus diF/dt  
10  
1
0.1  
[K/W]  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
[s]  
Fig. 7 Transient thermal impedance junction to case  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130521c  
© 2013 IXYS all rights reserved  
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