ADE-208-351(Z)
HZM6.8WA
Silicon Epitaxial Planar Zener Diode
for Surge Absorb
Rev. 0
May.1995
Features
Outline
• HZM6.8WA has two devices, and can absorb
external + and −surge.
3
• MPAK Package is suitable for high density
surface mounting and high speed assembly.
1
2
(Top View)
1 Cathode
2 Cathode
3 Anode
Ordering Information
Type No.
Laser Mark
Package Code
HZM6.8WA
68A
MPAK
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
Unit
mW
°C
*
Power dissipation
Junction temperature
p
200
d
T
150
j
Storage temperature
T
-55 to +150
°C
stg
* Two device total, See Fig. 2.
Electrical Characteristics (Ta = 25°C)
tem
Symbol Min
Typ
Max
7.0
2
Unit
V
Test Condition
Zener voltage
Reverse current
Capacitance
Dynamic resistance
ESD-Capability
V
6.47
—
—
I = 5 mA, 40ms pulse
Z
Z
I
—
µA
pF
Ω
V
= 3.5V
R
R
R
C
r
—
—
130
30
V
= 0 V , f = 1 MHz
—
—
I = 5 mA
Z
d
—
30
—
—
KV
*C=150pF, R=330Ω
Both forward and reverse
direction 10 pulse
* Failure criterion ; I ≥ 2µA at VR = 3.5V.
R
