请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXFN50N120SIC

型号：

IXFN50N120SIC

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

467 K

下载PDF手册
IXFN50N120SiC  
preliminary  
ID25  
VDSS  
=
47 A  
SiC Power MOSFET  
= 1200 V  
RDS(on) max = 50 mΩ  
Part number  
S
G
IXFN50N120SiC  
S
D
Backside: isolated  
UL pending  
D (3)  
G
(2)  
S (1, 4)  
Features / Advantages:  
Applications:  
Package: SOT-227B (minibloc)  
• High speed switching  
with low capacitances  
• High blocking voltage  
with low RDS(on)  
• Easy to parallel and simple to drive  
• Avalanche ruggedness  
• Resistant to latch-up  
• Solar inverters  
• High voltage DC/DC converters  
• Motor drives  
• Switch mode power supplies  
• UPS  
• Battery chargers  
• Induction heating  
• Isolation Voltage: 3000 V~  
• Industry standard outline  
• RoHS compliant  
• Epoxy meets UL 94V-0  
• BaseplatewithAluminiumnitride  
isolation  
• Advanced power cycling  
Terms & Conditions of usage  
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of  
the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly  
notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales  
office.  
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.  
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend  
- to perform joint risk and quality assessments;  
- the conclusion of quality agreements;  
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.  
IXYS reserves the right to change limits, test conditions and dimensions.  
20180223b  
© 2018 IXYS All rights reserved  
1 - 7  
IXFN50N120SiC  
preliminary  
MOSFET  
Ratings  
min. typ. max.  
1200  
Symbol Definitions  
Conditions  
drain source breakdown voltage  
VDSS  
VGS = 0 V, ID = 200µA  
V
max transient gate source voltage  
continous gate source voltage  
VGSM  
VGS  
-10  
-5  
+25  
+20  
V
V
recommended operational value  
VGS = 20 V  
drain current  
ID25  
ID80  
ID100  
TC = 25°C  
TC = 80°C  
TC = 100°C  
47  
35  
30  
A
A
A
static drain source on resistance  
gate threshold voltage  
RDSon  
VGS(th)  
IDSS  
ID = 40 A; VGS = 20 V  
ID = 10 mA; VGS = VDS  
VDS = 1200 V; VGS = 0 V  
VDS = 0 V; VGS = 20 V  
TVJ = 25°C  
TVJ = 150°C  
40  
75  
50  
mΩ  
mΩ  
TVJ = 25°C  
TVJ = 150°C  
2.0  
2.6  
2.1  
4.0  
V
V
drain source leakage current  
TVJ = 25°C  
TVJ = 150°C  
2
20  
200  
µA  
µA  
gate source leakage current  
internal gate resistance  
IGSS  
RG  
TVJ = 25°C  
0.5  
4.8  
µA  
Ω
input capacitance  
output capacitance  
reverse transfer (Miller) capacitance  
Ciss  
Coss  
Crss  
1900  
160  
13  
pF  
pF  
pF  
VDS = 1000 V; VGS = 0 V; f = 1 MHz TVJ = 25°C  
VDS = 800 V; ID = 40 A; VGS = 0/20 V TVJ = 25°C  
total gate charge  
gate source charge  
gate drain (Miller) charge  
Qg  
Qgs  
Qgd  
100  
22  
36  
nC  
nC  
nC  
turn-on delay time  
current rise time  
turn-off delay time  
current fall time  
turn-on energy per pulse  
turn-off energy per pulse  
reverse recovery losses at turn-off  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
Erec(off)  
23  
9
75  
ns  
ns  
ns  
Inductive switching  
VDS = 800 V; ID = 40 A  
TVJ = 25°C  
19  
ns  
VGS = -5 / 20 V; RG = 10 Ω (external)  
1.08  
0.29  
0.04  
mJ  
mJ  
mJ  
Freewheeling diode is Mosfet's body diode  
turn-on delay time  
current rise time  
turn-off delay time  
current fall time  
turn-on energy per pulse  
turn-off energy per pulse  
reverse recovery losses at turn-off  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
Erec(off)  
23  
9
100  
22  
1.48  
0.35  
0.10  
ns  
ns  
ns  
Inductive switching  
VDS = 800 V; ID = 40 A  
VGS = -5 / 20 V; RG = 10 Ω (external)  
Freewheeling diode is Mosfet's body diode  
TVJ = 150°C  
ns  
mJ  
mJ  
mJ  
thermal resistance junction to case  
thermal resistance junction to heatsink  
RthJC  
RthJH  
0.55  
K/W  
K/W  
with heatsink compound; IXYS test setup  
0.62  
Source-Drain Diode  
Symbol Definitions  
Ratings  
Conditions  
min. typ. max.  
forward voltage drop  
VSD  
IF = 40 A; VGS = -5 V  
TVJ = 25°C  
TVJ = 150°C  
5.2  
4.6  
V
V
reverse recovery time  
trr  
QRM  
IRM  
16  
330  
35  
ns  
nC  
A
VGS = -5 V; IF = 40 A; VR = 800 V  
Mosfet gate drive:  
VGS = -5 / 20 V; RG = 10 Ω  
TVJ = 25°C  
reverse recovery charge (intrinsic diode)  
max. reverse recovery current  
current slew rate  
dIF/dt  
4800  
A/µs  
reverse recovery time  
trr  
QRM  
IRM  
26  
810  
45  
ns  
nC  
A
VGS = -5 V; IF = 40 A; VR = 800 V  
Mosfet gate drive:  
VGS = -5 / 20 V; RG = 10 Ω  
TVJ = 150°C  
reverse recovery charge (intrinsic diode)  
max. reverse recovery current  
current slew rate  
dIF/dt  
4600  
A/µs  
Note:  
When using SiC Body Diode the maximum recommended VGS = -5V  
IXYS reserves the right to change limits, test conditions and dimensions.  
20180223b  
© 2018 IXYS All rights reserved  
2 - 7  
IXFN50N120SiC  
preliminary  
Package SOT-227B (minibloc)  
Ratings  
Symbol  
IRMS  
Definitions  
Conditions  
min.  
typ. max. Unit  
RMS current  
per terminal  
A
storage temperature  
operation temperature  
virtual junction temperature  
Tstg  
Top  
TVJ  
-40  
-40  
-40  
150  
150  
175  
°C  
°C  
°C  
Weight  
MD  
30  
g
Nm  
Nm  
mounting torque  
terminal torque  
1.1  
1.1  
1.5  
1.5  
MT  
dSpp/App  
dSpb/Apb  
terminal to backside  
terminal to terminal  
10.5 / 3.2  
8.6 / 6.8  
mm  
mm  
creepage distance on surface | striking distance through air  
isolation voltage  
VISOL  
IISOL < 1 mA; 50/60 Hz, t = 1 sec.  
t = 1 minute  
3000  
2500  
V
V
Product Marking  
Part No.  
Logo  
XXXXX  
®
yywwZ  
abcd  
DateCode  
Assembly Line Assembly Code  
Ordering  
Part Name  
Marking on Product Delivering Mode Base Qty Ordering Code  
IXFN50N120SiC Tube 10 515282  
Standard  
IXFN50N120SiC  
IXYS reserves the right to change limits, test conditions and dimensions.  
20180223b  
© 2018 IXYS All rights reserved  
3 - 7  
IXFN50N120SiC  
preliminary  
Outlines SOT-227B (minibloc)  
H
A
Millimeter  
Inches  
J
Dim.  
Nut M4 DIN 934  
min  
31.50  
7.80  
max  
31.88  
8.20  
min  
max  
Lens Head  
Screw M4x8  
DIN 7985  
G
A
B
C
D
E
F
1.240  
0.307  
0.161  
0.161  
0.161  
0.587  
1.186  
1.488  
0.460  
0.351  
0.029  
0.492  
0.990  
0.077  
0.195  
1.045  
0.155  
0.179  
0.968  
1.255  
0.323  
0.169  
0.169  
0.169  
0.595  
1.193  
1.505  
0.481  
0.378  
0.033  
0.516  
1.001  
0.084  
0.244  
1.059  
0.167  
0.191  
0.994  
K
B
Z
4.09  
4.29  
4.09  
4.29  
3
2
4
4.09  
4.29  
D
14.91  
30.12  
37.80  
11.68  
8.92  
15.11  
30.30  
38.23  
12.22  
9.60  
G
H
J
*
1
K
L
0.74  
0.84  
M
N
O
P
Q
R
S
T
12.50  
25.15  
1.95  
13.10  
25.42  
2.13  
E
L
6.20  
4.95  
*
F
26.90  
4.42  
26.54  
3.94  
Q
P
4.55  
4.85  
25.25  
0.10  
24.59  
-0.05  
3.20  
-0.002 0.004  
U
V
W
Z
* Center of each nut pocket  
0.126  
0.780  
0.098  
0.217  
0.830  
0.106  
5.50  
19.81  
2.50  
21.08  
2.70  
U
D (3)  
G
(2)  
S (1, 4)  
IXYS reserves the right to change limits, test conditions and dimensions.  
20180223b  
© 2018 IXYS All rights reserved  
4 - 7  
IXFN50N120SiC  
preliminary  
Curves  
100  
100  
80  
60  
40  
20  
0
20 V  
20 V  
18 V  
16 V  
14 V  
18 V  
TVJ = -25°C  
TVJ = 25°C  
16 V  
14 V  
80  
60  
40  
20  
0
ID  
ID  
12 V  
[A]  
[A]  
12 V  
VGS = 10 V  
VGS = 10 V  
0
1
2
3
4
5
6
7
8
9
10  
0
1
2
3
4
5
6
7
8
9
10  
VDS [V]  
VDS [V]  
Fig. 1 Typical output characteristics (-25°C)  
Fig. 2 Typical output characteristics (25°C)  
100  
80  
60  
40  
20  
0
2.5  
2.0  
1.5  
TVJ = 150°C  
20 V  
VGS = 20 V  
18 V  
16 V  
14 V  
ID = 80 A  
40 A  
12 V  
ID  
RDS(on)  
VGS = 10 V  
normalized  
[A]  
1.0  
0.5  
0.0  
0
1
2
3
4
5
6
7
8
9
10  
-25  
0
25  
50  
75 100 125 150 175  
VDS [V]  
TVJ [°C]  
Fig. 4 RDS(on) normalized vs. junction temperature TVJ  
Fig. 3 Typical output characteristics (150°C)  
100  
80  
100  
80  
VGS = 20 V  
ID = 40 A  
TVJ = 150°C  
VGS = 14 V  
16 V  
18 V  
20 V  
RDS(on)  
60  
RDS(on)  
60  
[mOhm]  
25°C  
[mOhm]  
-25°C  
40  
20  
40  
20  
0
20  
40  
IDS [A]  
Fig. 5 RDS(on) versus drain current  
60  
80  
100  
-25  
0
25  
50  
75 100 125 150 175  
TVJ [°C]  
Fig. 6 RDS(on) versus junction temperature TVJ  
IXYS reserves the right to change limits, test conditions and dimensions.  
20180223b  
© 2018 IXYS All rights reserved  
5 - 7  
IXFN50N120SiC  
preliminary  
Curves  
1.2  
1.1  
1.0  
3.00  
2.75  
2.50  
100  
80  
VDS = 20 V  
TVJ = 150°C  
VDSS  
60  
VDSS  
0.9  
ID  
[A]  
VTH  
2.25  
[V]  
IDSS  
=
0.2 mA  
25°C  
normalized  
40  
20  
0
0.8  
2.00  
1.75  
1.50  
-55°C  
VTH  
IDSS  
10 mA  
0.7  
=
0.6  
-25  
0
25  
50  
75 100 125 150 175  
0
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15  
TVJ [°C]  
VGS [V]  
Fig. 7 Norm. breakdow VDSS & treshhold voltage VTH  
versus junction temperature TVJ  
Fig. 8 Typical transfer characteristics  
TVJ = -55°C  
30  
25  
0
-20  
-40  
TVJ = -55°C  
25°C  
150°C  
20  
-5 V  
-2 V  
gfs  
IDS -60  
15  
[S]  
-80  
VGS = 0 V  
[V]  
10  
5
-100  
-120  
-140  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
ID [A]  
VDS [V]  
Fig. 10 Forward voltage drop of intrinsic diode  
versus VDS measured at -55°C  
Fig. 9 Typical forward transconductance  
TVJ = 25°C  
0
-20  
-40  
0
-20  
-40  
TVJ = 150°C  
-5 V  
-2 V  
-5 V  
-2 V  
IDS  
IDS  
-60  
-80  
-60  
VGS = 0 V  
VGS = 0 V  
-80  
-100  
-120  
-140  
[V]  
[V]  
-100  
-120  
-140  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
VDS [V]  
VDS [V]  
Fig. 11 Forward voltage drop of intrinsic diode  
versus VDS measured at 25°C  
Fig. 12 Forward voltage drop of intrinsic diode  
versus VDS measured at 150°C  
IXYS reserves the right to change limits, test conditions and dimensions.  
20180223b  
© 2018 IXYS All rights reserved  
6 - 7  
IXFN50N120SiC  
preliminary  
Curves  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
1.6  
1.2  
0.8  
0.4  
0.0  
Eon  
RG  
=
10 Ω  
150°C  
800 V  
TVJ  
VDS  
=
=
VGS = -5/20 V  
Eon  
RG  
=
10 Ω  
800 V  
VDS  
=
E
E
Erec  
x10  
VGS = -5/20 V  
ID 40 A  
=
[mJ]  
[mJ]  
E
Eoff  
rec x10  
Eoff  
0
10 20 30 40 50 60 70 80 90  
20  
40  
60  
80  
100  
120  
140  
160  
ID [A]  
TVJ [°C]  
Fig. 13 Typical switching energy  
versus drain current  
Fig. 14 Typical switching energy  
versus temperature  
160  
120  
80  
40  
0
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
ID  
TVJ = 150°C  
VDS 800 V  
GS = -5/20 V  
=
40 A  
=
V
Eon  
ID  
TVJ = 150°C  
VDS 800 V  
GS = -5/20 V  
=
40 A  
E
t
=
td(off)  
V
[mJ]  
[ns]  
E
rec x5  
td(on)  
tf  
Eoff  
tr  
4
8
12  
16  
RG [Ω]  
20  
24  
4
8
12  
16  
RG [Ω]  
20  
24  
Fig. 15 Typical switching energy versus  
external gate resistor  
Fig. 16 Typical switching time versus  
external gate resistor  
20  
15  
10  
5
0.8  
0.6  
ID  
=
=
40 A  
25°C  
TVJ  
V
DS = 800 V  
IGS = 10 mA  
Zth(J-H)  
0.4  
[K/W]  
VGS  
[V]  
0.2  
0
-5  
0.0  
0
20  
40  
60  
QG [nC]  
Fig. 17 Typical turn on gate charge, trendline  
80  
100  
120  
140  
1
10  
100  
1000  
10000  
tp [ms]  
Fig. 18 Typical transient thermal impedance  
IXYS reserves the right to change limits, test conditions and dimensions.  
20180223b  
© 2018 IXYS All rights reserved  
7 - 7  
厂商 型号 描述 页数 下载

ILSI

 		IXF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15AF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15AT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15BF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15BT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15CF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15CT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15DF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15DT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A20AF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.220199s