IXFR64N60Q3
Symbol
Test Conditions
Characteristic Values
ISOPLUS247 (IXFR) Outline
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 32A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
Gate Input Resistance
26
36
S
Ciss
Coss
Crss
9930
1090
90
pF
pF
pF
RGi
0.13
45
Ω
td(on)
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 32A
RG = 1Ω (External)
tr
15
50
ns
ns
td(off)
1 = Gate
tf
11
ns
2,4 = Drain
3 = Source
Qg(on)
Qgs
190
67
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 32A
Qgd
78
RthJC
RthCS
0.22 °C/W
°C/W
0.15
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
64
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
256
1.4
trr
QRM
IRM
300 ns
IF = 32A, -di/dt = 100A/μs
2.1
16.6
μC
A
VR = 100V, VGS = 0V
Note
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
