4N40
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
UNI
T
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=250µA, VGS=0V
DS=400V, VGS=0V
VDS=320V, TC=125°С
GS=+30V, VDS=0V
VGS=-30V, VDS=0V
400
V
V
1
µA
Drain-Source Leakage Current
Gate- Source Leakage Current
IDSS
100 µA
+100 nA
-100 nA
Forward
Reverse
V
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
RDS(ON) VGS=10V, ID=2A
2.0
4.0
1.8
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
ꢀ
CISS
315
120
40
pF
pF
pF
Output Capacitance
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Rise Time
tD(ON)
tR
tD(OFF)
tF
30
60
ns
ns
ns
ns
VDD=30V, ID=0.5A, RG=25ꢀ
(Note 2, 3)
Turn-OFF Delay Time
Fall-Time
100
68
Total Gate Charge
QG
18.5 30 nC
Gate-Source Charge
Gate-Drain Charge
QGS
QGD
VDD=50V, ID=1.3A, VGS=10V, IG=100µA
4.5
5.5
nC
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
VSD
trr
IS=4A, VGS=0V
1.4
V
IS=4A, VGS=0V, dIF/dt=100A/µs(Note 2)
800
ns
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
3. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
4 of 5
QW-R502-550.D
www.unisonic.com.tw
