找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

ZXTN649FTA

型号:

ZXTN649FTA

品牌:

DIODES[ DIODES INCORPORATED ]

页数:

7 页

PDF大小:

238 K

A Product Line of  
Diodes Incorporated  
ZXTN649F  
25V NPN LOW SATURATION TRANSISTOR IN SOT23  
Features  
Mechanical Data  
Case: SOT23  
BVCEO > 25V  
BVCBO > 35V forward blocking voltage  
IC = 3A high Continuous Collector Current  
Low saturation voltage, VCE(SAT) < 120mV @1A  
Case Material: molded plastic, “Green” molding compound  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish – Matte Tin Plated Leads, Solderable per  
MIL-STD-202, Method 208  
RCE(SAT) = 77mfor a low equivalent On-Resistance  
725mW Power dissipation  
hFE specified up to 6A for high current gain hold up  
Complementary PNP Type: ZXTP749F  
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
Weight 0.008 grams (approximate)  
Applications  
MOSFET gate drivers  
Power switching in automotive and industrial applications  
Motor drive and control  
SOT23  
C
E
E
C
B
B
Top View  
Device Symbol  
Top View  
Pin-Out  
Ordering Information (Note 4)  
Product  
ZXTN649FTA  
Marking  
1N7  
Reel size (inches)  
Tape width (mm)  
Quantity per reel  
7
8
3,000  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. For packaging details, go to our website at http://www.diodes.com.  
Marking Information  
1N7 = Product type Marking Code  
ZXTN649F  
Document number: DS31900 Rev. 3 - 2  
1 of 7  
www.diodes.com  
January 2013  
© Diodes Incorporated  
A Product Line of  
Diodes Incorporated  
ZXTN649F  
Maximum Ratings (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
35  
25  
7
Unit  
V
V
V
Continuous Collector Current  
Peak Pulse Current  
3
A
6
A
ICM  
Base Current  
500  
mA  
IB  
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
PD  
Value  
725  
Unit  
mW  
°C/W  
°C/W  
°C  
Power Dissipation  
(Note 5)  
(Note 5)  
(Note 6)  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Leads  
Operating and Storage Temperature Range  
172  
RθJA  
RθJL  
79  
-55 to +150  
TJ, TSTG  
ESD Ratings (Note 7)  
Characteristic  
Electrostatic Discharge - Human Body Model  
Electrostatic Discharge - Machine Model  
Symbol  
ESD HBM  
ESD MM  
Value  
8,000  
400  
Unit  
V
V
JEDEC Class  
3B  
C
Notes:  
5. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is  
measured when operating in a steady-state condition.  
6. Thermal resistance from junction to solder-point (at the end of collector lead).  
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.  
ZXTN649F  
Document number: DS31900 Rev. 3 - 2  
2 of 7  
www.diodes.com  
January 2013  
© Diodes Incorporated  
A Product Line of  
Diodes Incorporated  
ZXTN649F  
Thermal Characteristics and Derating information  
0.8  
0.6  
0.4  
0.2  
0.0  
VCE(sat)  
10  
Limited  
1
DC  
1s  
100ms  
100m  
10ms  
Single Pulse  
Tamb=25°C  
1ms  
100µs  
10  
10m  
100m  
1
0
20  
40 60 80 100 120 140 160  
Temperature (°C)  
VCE Collector-Emitter Voltage (V)  
Safe Operating Area  
Derating Curve  
180  
160  
140  
120  
Tamb=25°C  
Single Pulse  
Tamb=25°C  
100  
10  
1
100 D=0.5  
80  
60  
D=0.2  
40  
Single Pulse  
D=0.05  
D=0.1  
20  
0
100µ 1m 10m 100m  
1
10  
100  
1k  
100µ 1m 10m 100m  
1
10  
100  
1k  
Pulse Width (s)  
Pulse Width (s)  
Transient Thermal Impedance  
Pulse Power Dissipation  
ZXTN649F  
Document number: DS31900 Rev. 3 - 2  
3 of 7  
www.diodes.com  
January 2013  
© Diodes Incorporated  
A Product Line of  
Diodes Incorporated  
ZXTN649F  
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
BVCBO  
BVCEO  
BVEBO  
Min  
35  
25  
7
Typ  
110  
35  
Max  
Unit  
V
Test Condition  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage (Note 8)  
Emitter-Base Breakdown Voltage  
-
-
-
IC = 100µA  
IC = 10mA  
IE = 100µA  
VCB = 28V  
V
8.1  
V
nA  
µA  
50  
0.5  
Collector Cut-off Current  
Emitter Cut-off Current  
-
-
<1  
<1  
ICBO  
IEBO  
V
CB = 28V, TA = +100°C  
50  
nA  
VEB = 5.6V  
IC = 100mA, VCE = 2V  
IC = 1A, VCE = 2V  
200  
175  
155  
50  
320  
280  
250  
85  
500  
-
-
-
Static Forward Current Transfer Ratio (Note 8)  
-
hFE  
I
C = 2A, VCE = 2V  
IC = 6A, VCE = 2V  
IC = 1A, IB = 100mA  
-
-
70  
200  
120  
300  
Collector-Emitter Saturation Voltage (Note 8)  
mV  
VCE(sat)  
I
C = 3A, IB = 300mA  
Base-Emitter Saturation Voltage (Note 8)  
Base-Emitter Saturation Voltage (Note 8)  
-
-
900  
780  
1000  
850  
mV  
mV  
VBE(sat)  
VBE(on)  
IC = 1A, IB = 100mA  
IC = 1A, VCE = 2V  
Notes:  
8. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%  
ZXTN649F  
Document number: DS31900 Rev. 3 - 2  
4 of 7  
www.diodes.com  
January 2013  
© Diodes Incorporated  
A Product Line of  
Diodes Incorporated  
ZXTN649F  
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
1
Tamb=25°C  
IC/IB=10  
0.3  
0.2  
0.1  
0.0  
IC/IB=100  
IC/IB=50  
150°C  
100°C  
100m  
10m  
1m  
IC/IB=10  
25°C  
IC/IB=20  
-55°C  
IC10mCollect1o0r0Cmurrent (A)  
IC Collector Current (A)  
1m  
1
10m  
100m  
1
VCE(sat) v IC  
VCE(sat) v IC  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
IC/IB=10  
VCE=2V  
300  
200  
100  
0
-55°C  
25°C  
150°C  
100°C  
25°C  
150°C  
100°C  
-55°C  
IC10mCollect1o0r0mCurrent (A)  
IC10mCollect1o0r0Cmurrent (A)  
1m  
1
10  
1m  
1
hFE v IC  
VBE(sat) v IC  
200  
180  
160  
140  
120  
100  
80  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
VCE=2V  
f = 1MHz  
-55°C  
Cibo  
25°C  
60  
Cobo  
150°C  
40  
20  
100°C  
1
0
10m  
1
10  
100m Voltage(V)  
IC10mCollect1o0r0Cmurrent (A)  
1m  
Capacitance v Voltage  
VBE(on) v IC  
ZXTN649F  
Document number: DS31900 Rev. 3 - 2  
5 of 7  
www.diodes.com  
January 2013  
© Diodes Incorporated  
A Product Line of  
Diodes Incorporated  
ZXTN649F  
Package Outline Dimensions  
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.  
A
SOT23  
Dim  
A
B
C
D
F
G
H
J
K
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013 0.10  
0.903 1.10  
-
0.45  
0.085 0.18  
0° 8°  
Max  
0.51  
1.40  
2.50  
1.03 0.915  
0.60 0.535  
Typ  
0.40  
1.30  
2.40  
C
B
2.05  
3.00  
1.83  
2.90  
0.05  
1.00  
0.400  
0.55  
0.11  
-
H
G
M
K
J
K1  
K1  
L
M
-
D
F
0.61  
L
α
All Dimensions in mm  
Suggested Pad Layout  
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.  
Y
Dimensions Value (in mm)  
Z
X
Y
C
E
2.9  
0.8  
0.9  
2.0  
Z
C
1.35  
E
X
ZXTN649F  
Document number: DS31900 Rev. 3 - 2  
6 of 7  
www.diodes.com  
January 2013  
© Diodes Incorporated  
A Product Line of  
Diodes Incorporated  
ZXTN649F  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  
final and determinative format released by Diodes Incorporated.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2013, Diodes Incorporated  
www.diodes.com  
ZXTN649F  
Document number: DS31900 Rev. 3 - 2  
7 of 7  
www.diodes.com  
January 2013  
© Diodes Incorporated  
厂商 型号 描述 页数 下载

ZETEX

ZXT1053AK 75V NPN低饱和中功率晶体管D- PAK[ 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK ] 6 页

DIODES

ZXT1053AK 75V NPN低饱和中功率晶体管D- PAK[ 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK ] 6 页

DIODES

ZXT1053AKQTC [ 暂无描述 ] 6 页

ZETEX

ZXT1053AKTC 75V NPN低饱和中功率晶体管D- PAK[ 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK ] 6 页

DIODES

ZXT1053AKTC 75V NPN低饱和中功率晶体管D- PAK[ 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK ] 6 页

ZETEX

ZXT10N15DE6 15V NPN硅低饱和开关晶体管[ 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR ] 6 页

DIODES

ZXT10N15DE6 15V NPN硅低饱和开关晶体管[ 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR ] 6 页

ZETEX

ZXT10N15DE6TA 15V NPN硅低饱和开关晶体管[ 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR ] 6 页

DIODES

ZXT10N15DE6TA 15V NPN硅低饱和开关晶体管[ 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR ] 6 页

ZETEX

ZXT10N15DE6TC 15V NPN硅低饱和开关晶体管[ 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR ] 6 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.211661s