请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXGA20N250HV

型号：

IXGA20N250HV

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

197 K

下载PDF手册
Preliminary Technical Information  
High Voltage IGBT  
VCES = 2500V  
IC110 = 12A  
VCE(sat) ≤ 3.1V  
IXGA20N250HV  
For Capacitor Discharge  
Applications  
TO-263  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
2500  
2500  
V
V
G
E
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
C (Tab)  
IC25  
IC110  
ICM  
TC = 25°C  
30  
12  
A
A
G = Gate  
E = Emitter  
C
= Collector  
TC = 110°C  
Tab = Collector  
TC = 25°C, VGE = 19V, 1ms  
10ms  
105  
55  
A
A
SSOA  
VGE = 15V, TVJ = 125°C, RG = 20Ω  
ICM = 60  
1500  
A
V
(RBSOA)  
Clamped Inductive Load  
Features  
PC  
TC = 25°C  
150  
W
ꢀ
International Standard Package  
High Voltage Package  
Electrically Isolated Tab  
High Peak Current Capability  
Low Saturation Voltage  
Molding Epoxies Meet UL 94 V-0  
Flammability Classification  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
VISOL  
50/60Hz, 1 Minute  
4000  
2.3  
V~  
g
Weight  
Advantages  
ꢀ
High Power Density  
Easy to Mount  
ꢀ
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
2500  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = 0.8 • VCES, VGE = 0V  
V
V
Applications  
5.0  
ꢀ
Capacitor Discharge  
Pulser Circuits  
ꢀ
25 μA  
750 μA  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC = 20A, VGE = 15V, Note 1  
3.1  
V
DS100474B(04/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXGA20N250HV  
Symbol  
Test Conditions  
Characteristic Values  
TO-263 (HV) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 20A, VCE = 10V, Note 1  
VGE = 20V, VCE = 15V, Note 1  
8
13  
S
A
IC(ON)  
190  
Cies  
Coes  
Cres  
1190  
53  
pF  
pF  
pF  
VCE = 15V, VGE = 25V, f = 1MHz  
IC = 20A, VGE = 15V, VCE = 1000V  
18  
Qg  
53  
8
nC  
nC  
nC  
Qge  
Qgc  
22  
PIN: 1 - Gate  
2 - Emitter  
3 - Collector  
td(on)  
57  
ns  
Resistive Switching Times  
IC = 40A, VGE = 15V, Note 1  
VCE = 1250V, RG = 10Ω  
tr  
td(off)  
160  
136  
ns  
ns  
tf  
930  
ns  
RthJC  
0.83 °C/W  
Note  
1. Pulse test, t < 300μs, duty cycle, d < 2%.  
PRELIMANARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGA20N250HV  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
240  
200  
160  
120  
80  
VGE = 25V  
VGE = 25V  
23V  
19V  
15V  
13V  
21V  
19V  
11V  
17V  
15V  
13V  
11V  
9V  
7V  
5V  
40  
9V  
7V  
0
0
1
2
3
4
5
6
0
5
10  
15  
20  
25  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGE = 25V  
21V  
VGE = 15V  
17V  
15V  
13V  
11V  
I C = 80A  
I C = 40A  
9V  
7V  
I C = 20A  
5V  
7
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
1
2
3
4
5
6
8
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
9
8
7
6
5
4
3
2
TJ = 25ºC  
TJ = - 40ºC  
25ºC  
I C = 80A  
125ºC  
40A  
20A  
10  
6
8
12  
14  
16  
VGE - Volts  
18  
20  
22  
24  
26  
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
VGE - Volts  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXGA20N250HV  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
18  
16  
14  
12  
10  
8
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 1000V  
I
I
C = 20A  
G = 10mA  
25ºC  
125ºC  
6
6
4
4
2
2
0
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Reverse-Bias Safe Operating Area  
Fig. 10. Capacitance  
10,000  
1,000  
100  
70  
60  
50  
40  
30  
20  
10  
0
= 1 MHz  
f
C
ies  
C
oes  
TJ = 125ºC  
G = 20Ω  
dv / dt < 10V / ns  
R
C
res  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
100 300 500 700 900 1100 1300 1500 1700 1900 2100 2300 2500  
VCE - Volts  
VCE - Volts  
Fig. 13. Maximum Transient Thermal Impedance  
1
D = 0.50  
D = 0.20  
0.1  
D = 0.10  
D = 0.05  
D = tp / T  
t
p
D = 0.02  
D = 0.01  
T
Single Pulse  
0.01  
0.000001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGA20N250HV  
Fig. 12. Resistive Turn-on Rise Time  
vs. Junction Temperature  
Fig. 13. Resistive Turn-on Rise Time  
vs. Collector Current  
400  
350  
300  
250  
200  
150  
100  
50  
400  
350  
300  
250  
200  
150  
100  
RG = 10Ω , VGE = 15V  
RG = 10Ω , VGE = 15V  
VCE = 1250V  
VCE = 1250V  
I C = 80A  
TJ = 125ºC  
TJ = 25ºC  
I C = 40A  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
20  
30  
40  
50  
60  
70  
80  
IC - Amperes  
TJ - Degrees Centigrade  
Fig. 15. Resistive Turn-off Switching Times  
vs. Junction Temperature  
Fig. 14. Resistive Turn-on Switching Times  
vs. Gate Resistance  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
400  
350  
300  
250  
200  
150  
100  
50  
1400  
1200  
1000  
800  
600  
400  
200  
0
160  
150  
140  
130  
120  
110  
100  
90  
tf  
t
d(off) - - - -  
tf  
t
d(on) - - - -  
TJ = 125ºC, VGE = 15V  
RG = 10Ω, VGE = 15V  
VCE = 1250V  
VCE = 1250V  
I C = 40A  
I C = 40A  
I C = 80A  
I C = 80A  
0
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
500  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 16. Resistive Turn-off Switching Times  
vs. Collector Current  
Fig. 17. Resistive Turn-off Switching Times  
vs. Gate Resistance  
2000  
1800  
1600  
1400  
1200  
1000  
800  
180  
170  
160  
150  
140  
130  
120  
110  
100  
90  
2000  
1800  
1600  
1400  
1200  
1000  
800  
2000  
1800  
1600  
1400  
1200  
1000  
800  
tf  
td(off  
) - - - -  
tf  
td(off) - - - -  
TJ = 125ºC, VGE = 15V  
RG = 10Ω, VGE = 15V  
VCE = 1250V  
VCE = 1250V  
I C = 40A  
TJ = 125ºC  
600  
600  
600  
I C = 80A  
400  
400  
400  
TJ = 25ºC  
200  
200  
200  
0
80  
0
0
20  
30  
40  
50  
60  
70  
80  
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
500  
RG - Ohms  
IC - Amperes  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXYS REF: G_20N250(4P)6-07-12-A  
厂商 型号 描述 页数 下载

IXYS

 		IXGA10N60 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

IXYS

 		IXGA10N60A 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

ETC

 		IXGA10N60AU1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

ETC

 		IXGA10N60U1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

IXYS

 		IXGA12N100 IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100A IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100AU1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N100U1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N120A2 IGBT优化切换至为5KHz[ IGBT Optimized for switching up to 5KHz ] 5 页

IXYS

 		IXGA12N120A3 GenX3 1200V的IGBT[ GenX3 1200V IGBTs ] 5 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.193840s