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VUB51-12NO1

型号:

VUB51-12NO1

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

68 K

VUB 51  
VRRM = 1200-1600 V  
IdAV = 51 A  
Three Phase Rectifier Bridge  
with IGBT and Fast Recovery Diode  
for Braking System  
Preliminary data  
5
4
2
1
VRRM  
Type  
V
1200  
1600  
VUB 51-12 NO1  
VUB 51-16 NO1  
10  
9
7
6
Symbol  
Test Conditions  
Maximum Ratings  
VRRM  
IdAV  
IdAVM  
1200 / 1600  
V
A
A
Features  
TH = 110°C, sinusoidal 120°  
limited by leads  
51  
70  
Soldering connections for PCB  
mounting  
Isolation voltage 3600 V~  
Ultrafast freewheel diode  
Convenient package outline  
UL registered E 72873  
IFSM  
I2t  
TVJ = 45°C,t = 10 ms, VR = 0 V  
TVJ = 150°C,t = 10 ms, VR = 0 V  
300  
260  
A
A
TVJ = 45°C,t = 10 ms, VR = 0 V  
TVJ = 150°C,t = 10 ms, VR = 0V  
450  
340  
A
A
Ptot  
-
VCES  
VGE  
TH = 25°C per diode  
80  
W
Applications  
Drive Inverters with brake system  
TVJ = 25°C to 150°C  
Continuous  
1200  
± 20  
V
V
Advantages  
IC25  
IC80  
ICM  
TH = 25°C, DC  
31  
21  
A
A
2 functions in one package  
No external isolation  
Easy to mount with two screws  
Suitable for wave soldering  
TH = 80°C, DC  
tp = Pulse width limited by TVJM  
TH = 25°C  
62  
A
High temperature and power cycling  
Ptot  
130  
W
capability  
VRRM  
IFAV  
IFRMS  
IFRM  
1200  
9
V
A
A
A
TH = 80°C, rectangular d = 0.5  
TH = 80°C, rectangular d = 0.5  
TH = 80°C, tP = 10 ms, f = 5 kHz  
Dimensions in mm (1 mm = 0.0394")  
14  
90  
IFSM  
TVJ = 45°C, t = 10 ms  
TVJ = 150°C,t = 10 ms  
75  
60  
A
A
Ptot  
TH = 25°C  
40  
W
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+125  
°C  
°C  
°C  
VISOL  
50/60 Hz  
IISOL £ 1 mA  
t = 1 min  
t = 1 s  
3000  
3600  
V~  
V~  
Md  
Mounting torque  
typ.  
(M5)  
(10-32 unf)  
2-2.5  
18-22  
35  
Nm  
lb.in.  
g
Weight  
Data according to IEC 60747  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2000 IXYS All rights reserved  
1 - 2  
VUB 51  
Symbol  
Test Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min.  
typ. max.  
IR  
VR = VRRM  
VR = VRRM  
,
,
TVJ = 25°C  
TVJ = 150°C  
0.1 mA  
3
1.16  
0.8  
mA  
V
VF  
IF = 25 A,  
TVJ = 25°C  
VT0  
rT  
For power-loss calculations only  
TVJ = 150°C  
V
12.5 mW  
RthJH  
per diode  
1.5 K/W  
VBR(CES)  
VGE(th)  
VGS = 0 V, IC = 3 mA  
IC = 10 mA  
1200  
5
V
V
7.5  
IGES  
ICES  
VGE = ± 20 V  
500 nA  
TVJ = 25°C, VCE = 0.8 VCES  
TVJ = 125°C, VCE = 0.8 VCES  
250 mA  
1
mA  
VCEsat  
VGE = 15 V, IC = 25 A  
3.5  
V
tSC  
(SCSOA)  
VGE = 15 V, VCE = 0.6 VCES, TVJ = 125°C,  
RG = 4.7 W, non repetitive  
10 ms  
IC  
VGE = 15 V, VCE = 0.8 VCES, TVJ = 125°C,  
50  
A
(RBSOA)  
RG = 4.7 W, Clamped Inductive load, L = 100 mH  
Cies  
VCE = 25 V, f = 1 MHz, VGE = 0 V  
2.9  
nF  
td(on)  
td(off)  
tfi  
Eon  
Eoff  
100  
220  
1600  
3.5  
ns  
ns  
ns  
mJ  
mJ  
VCE = 600 V, IC = 25 A  
V
GE = 15 V, RG = 4.7 W  
Inductive load; L = 100 mH  
VJ = 125°C  
T
12  
RthJH  
IR  
1 K/W  
VR = VRRM  
,
TVJ = 25°C  
0.2 mA  
VR = 800 V, TVJ =150°C  
6
mA  
VF  
IF  
= 12 A, TVJ = 25°C  
2.7  
V
VT0  
rT  
For power-loss calculations only  
TVJ = 150°C  
1.65  
46 mW  
V
IRM  
IF  
= 25 A, -diF/dt = 100 A/ms  
6.5  
50  
7
A
VR = 100 V TJ = 100°C  
trr  
IF  
= 1 A,  
-diF/dt = 100 A/ms  
70 ns  
VR = 30 V TJ = 100°C  
RthJH  
3.12 K/W  
dS  
dA  
a
Creep distance on surface  
Strike distance in air  
Maximum allowable acceleration  
12.7 mm  
9.4 mm  
50 m/s2  
© 2000 IXYS All rights reserved  
2 - 2  
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