IXFA7N80P IXFI7N80P IXFP7N80P
Leaded 263 (IXFI) Outline
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 20 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
5
9.5
S
Ciss
Coss
Crss
1890
133
13
pF
pF
pF
td(on)
tr
td(off)
tf
28
32
55
24
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 4 A
RG = 10 Ω (External)
Qg(on)
Qgs
32
12
9
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
RthCS
0.62 °C/W
°C/W
0.5
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0 V
Repetitive
7
A
A
V
ISM
18
TO-220 (IXFP) Outline
VSD
IF = IS, VGS = 0 V,
1.5
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
trr
IF = 7A,
250
ns
QRM
IRM
-di/dt = 100 A/μs
VR = 100V
0.3
3
μC
A
TO-263 (IXFA) Outline
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2
7,063,975 B2
6,771,478 B2 7,071,537
