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IXFN400N15X3

型号：

IXFN400N15X3

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

152 K

下载PDF手册
Advance Technical Information  
X3-Class HiPerFETTM  
Power MOSFET  
VDSS = 150V  
ID25 = 400A  
RDS(on) 2.5m  
IXFN400N15X3  
D
N-Channel Enhancement Mode  
Avalanche Rated  
G
S
miniBLOC, SOT-227  
E153432  
S
S
G
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
150  
150  
V
V
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
S
D
D = Drain  
ID25  
IL(RMS)  
IDM  
TC = 25C  
External Lead Current Limit  
TC = 25C, Pulse Width Limited by TJM  
400  
200  
900  
A
A
A
G = Gate  
S = Source  
IA  
EAS  
TC = 25C  
TC = 25C  
200  
3.5  
A
J
PD  
TC = 25C  
695  
20  
W
Features  
dv/dt  
IS IDM, VDD VDSS, TJ 150°C  
V/ns  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
International Standard Package  
miniBLOC, with Aluminium Nitride  
Isolation  
Isolation Voltage 2500V~  
High Current Handling Capability  
Avalanche Rated  
VISOL  
50/60 Hz, RMS  
IISOL 1mA  
t = 1 minute  
t = 1 second  
2500  
3000  
V~  
V~  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in  
Nm/lb.in  
Low RDS(on)  
Weight  
30  
g
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
150  
V
V
Applications  
2.5  
4.5  
Switch-Mode and Resonant-Mode  
Power Supplies  
200 nA  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
IDSS  
25 A  
1.5 mA  
TJ = 125C  
RDS(on)  
VGS = 10V, ID = 200A, Note 1  
2.5 m  
© 2017 IXYS CORPORATION, All Rights Reserved.  
DS100851B(10/17)  
IXFN400N15X3  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B (IXFN) Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 60A, Note 1  
Gate Input Resistance  
85  
145  
S
RGi  
2.15  
Ciss  
Coss  
Crss  
23.7  
3730  
140  
nF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
Effective Output Capacitance  
Co(er)  
Co(tr)  
2200  
5330  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
VDS = 0.8 • VDSS  
td(on)  
tr  
td(off)  
tf  
36  
30  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 200A  
(M4 screws (4x) supplied)  
V
210  
19  
RG = 1(External)  
Qg(on)  
Qgs  
365  
103  
87  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 200A  
Qgd  
RthJC  
RthCS  
0.18 C/W  
C/W  
0.05  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
400  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
1600  
1.4  
V
trr  
QRM  
IRM  
132  
580  
8.8  
ns  
IF = 150A, -di/dt = 100A/μs  
 nC  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFN400N15X3  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
400  
350  
300  
250  
200  
150  
100  
50  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
V
= 10V  
GS  
V
= 10V  
9V  
GS  
9V  
8V  
7V  
8V  
7V  
6V  
6V  
5V  
5V  
4
0
0
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
0
2
6
8
10  
12  
14  
16  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 200A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
400  
350  
300  
250  
200  
150  
100  
50  
V
= 10V  
9V  
GS  
8V  
7V  
V
= 10V  
GS  
I
= 400A  
D
I
= 200A  
D
6V  
5V  
4V  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
2
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 200A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
V
= 10V  
GS  
BV  
DSS  
o
T = 125 C  
J
V
GS(th)  
o
T
J
= 25 C  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
100  
200  
300  
400  
500  
600  
700  
800  
900  
1000  
TJ - Degrees Centigrade  
ID - Amperes  
© 2017 IXYS CORPORATION, All Rights Reserved.  
IXFN400N15X3  
Fig. 7. Maximum Drain Current vs. Case Temperature  
Fig. 8. Input Admittance  
400  
350  
300  
250  
200  
150  
100  
50  
220  
200  
180  
160  
140  
120  
100  
80  
V
= 10V  
DS  
External Lead Current Limit  
o
T
J
= 125 C  
o
o
25 C  
- 40 C  
60  
40  
20  
0
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
450  
400  
3.0  
0.2  
1
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
Fig. 9. Transconductance  
450  
400  
350  
300  
250  
200  
150  
100  
50  
800  
700  
600  
500  
400  
300  
200  
100  
0
o
T
= - 40 C  
J
V
= 10V  
DS  
o
25 C  
o
125 C  
o
T = 125 C  
J
o
T = 25 C  
J
0
0
50  
100  
150  
200  
250  
300  
350  
400  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
ID - Amperes  
VSD - Volts  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
100,000  
10,000  
1,000  
100  
10  
9
8
7
6
5
4
3
2
1
0
V
= 75V  
DS  
I
I
= 200A  
= 10mA  
D
G
C
iss  
C
C
oss  
rss  
= 1 MHz  
f
0
50  
100  
150  
200  
250  
300  
350  
10  
100  
1,000  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFN400N15X3  
Fig. 14. Forward-Bias Safe Operating Area  
Fig. 13. Output Capacitance Stored Energy  
1000  
24  
20  
16  
12  
8
R
Limit  
)
DS(  
on  
25μs  
100μs  
100  
10  
1
External Lead  
Current Limit  
1ms  
10ms  
o
100ms  
T
= 150 C  
J
DC  
o
4
T
= 25 C  
C
Single Pulse  
0
0.1  
0
20  
40  
60  
80  
100  
120  
140  
1
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
aaaaa  
0.3  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2017 IXYS CORPORATION, All Rights Reserved.  
IXYS REF: F_400N15X3(29-S151) 7-13-17  
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