请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXGR72N60C3

型号：

IXGR72N60C3

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

214 K

下载PDF手册
Preliminary Technical Information  
TM  
VCES  
IC110  
VCE(sat)  
tfi(typ)  
= 600V  
= 35A  
£ 2.7V  
= 55ns  
GenX3 600V IGBT  
IXGR72N60C3  
(Electrically Isolated Tab)  
High-Speed Low-Vsat PT IGBT  
40-100 kHz Switching  
ISOPLUS 247TM  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
600  
600  
V
V
VCGR  
TJ = 25C to 150C, RGE = 1M  
G
C
E
Isolated Tab  
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
G = Gate  
E = Emitter  
C = Collector  
IC25  
IC110  
ICM  
TC = 25C  
TC = 110C  
TC = 25C, 1ms  
80  
35  
A
A
A
400  
IA  
TC = 25C  
TC = 25C  
50  
A
Features  
EAS  
500  
mJ  
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
SSOA  
VGE = 15V, TVJ = 125C, RG = 2  
Clamped Inductive Load  
ICM = 150  
A
Optimized for Low Switching Losses  
Square RBSOA  
(RBSOA)  
VCE VCES  
PC  
TC = 25C  
200  
W
Isolated Mounting Surface  
Avalanche Rated  
2500V Electrical Isolation  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Advantages  
High Power Density  
VISOL  
50/60 Hz, 1 Minute  
Mounting Force  
2500  
V~  
Low Gate Drive Requirement  
FC  
20..120/4.5..27  
5
N/lb  
g
Weight  
Applications  
High Frequency Power Inverters  
UPS  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
BVCES  
IC = 250A, VGE = 0V  
600  
V
V
VGE(th)  
ICES  
IC = 250A, VCE = VGE  
3.0  
5.5  
VCE = VCES, VGE = 0V  
300 A  
mA  
100 nA  
TJ = 125C  
TJ = 125C  
1
IGES  
VCE = 0V, VGE = 20V  
VCE(sat)  
IC = 50A, VGE = 15V  
2.10  
1.65  
2.70  
V
V
DS100607(04/14)  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXGR72N60C3  
Symbol  
Test Conditions  
Characteristic Values  
ISOPLUS247 (IXGR) Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 50A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
33  
55  
S
Cies  
Coes  
Cres  
4780  
330  
pF  
pF  
pF  
117  
Qg  
175  
33  
nC  
nC  
nC  
Qge  
Qgc  
IC = 50A, VGE = 15V, VCE = 0.5 • VCES  
72  
td(on)  
tri  
27  
37  
ns  
ns  
Inductive Load, TJ = 25C  
1
2
3
- Gate  
- Collector  
- Emitter  
Eon  
td(off)  
tfi  
1.03  
77  
mJ  
ns  
IC = 50A, VGE = 15V  
130  
110  
VCE = 480V, RG = 2Note 2  
55  
ns  
Eoff  
0.48  
0.95 mJ  
td(on)  
tri  
26  
36  
ns  
ns  
Inductive Load, TJ =1 25C  
Eon  
td(off)  
tfi  
1.48  
120  
124  
0.93  
mJ  
ns  
IC = 50A, VGE = 15V  
VCE = 480V, RG = 2Note 2  
ns  
Eoff  
mJ  
RthJC  
RthCS  
0.62 C/W  
C/W  
0.15  
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.  
PRELIMANARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGR72N60C3  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
350  
300  
250  
200  
150  
100  
50  
VGE = 15V  
13V  
VGE = 15V  
13V  
11V  
11V  
9V  
9V  
7V  
7V  
5V  
5V  
0
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
0
2
4
6
8
10  
12  
14  
150  
8.0  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
JunctionTemperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGE = 15V  
13V  
VGE = 15V  
11V  
9V  
I C = 100A  
I C = 50A  
7V  
5V  
I C = 25A  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
0
25  
50  
75  
100  
125  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
TJ = 25ºC  
TJ = 125ºC  
25ºC  
I C = 100A  
- 40ºC  
50A  
25A  
6
7
8
9
10  
11  
12  
13  
14  
15  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
VGE - Volts  
VGE - Volts  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXGR72N60C3  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
16  
14  
12  
10  
8
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
VCE = 300V  
I
I
C = 50A  
G = 10mA  
25ºC  
125ºC  
6
4
2
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
160  
140  
120  
100  
80  
10,000  
1,000  
100  
C
ies  
C
oes  
res  
60  
C
40  
TJ = 125ºC , RG = 2Ω  
dv / dt < 10V / ns  
= 1 MHz  
f
20  
0
10  
100  
200  
300  
400  
VCE - Volts  
500  
600  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGR72N60C3  
Fig. 13. Inductive Switching  
Energy Loss vs. Collector Current  
Fig. 12. Inductive Switching  
Energy Loss vs. Gate Resistance  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
5.6  
4.8  
4.0  
3.2  
2.4  
1.6  
0.8  
0.0  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
E
E
on - - - -  
off  
E
V
E
on - - - -  
off  
T
J
= 125ºC , V = 15V  
GE  
R
G
= 2  
V
Ω  
= 15V  
GE  
V
= 480V  
CE  
= 480V  
CE  
I
= 100A  
C
T
= 125ºC, 25ºC  
J
I
= 50A  
C
20  
30  
40  
50  
60  
70  
80  
90  
100  
2
3
4
5
6
7
8
9
10  
11 12  
13 14  
15  
RG - Ohms  
IC - Amperes  
Fig. 14. Inductive Switching  
Energy Loss vs. Junction Temperature  
Fig. 15. Inductive Turn-off  
Switching Times vs. Gate Resistance  
190  
180  
170  
160  
150  
140  
130  
120  
110  
100  
90  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
3.5  
5.6  
4.8  
4.0  
3.2  
2.4  
1.6  
0.8  
0.0  
t f i  
t
d(off) - - - -  
E
E
on - - - -  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
off  
= 2ꢀ  
T
J
= 125ºC, V = 15V  
GE  
R
VGE = 15V  
  
G
V
= 480V  
CE  
VCE = 480V  
IC = 100A  
I
= 100A  
C
I
= 50A  
C
I
= 50A  
115  
C
0
25  
35  
45  
55  
65  
75  
85  
95  
105  
125  
2
3
4
5
6
7
8
9
10 11 12 13 14 15  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
160  
140  
120  
100  
80  
125  
115  
105  
95  
180  
150  
t f i  
t
d(off) - - - -  
tf i  
t
d(off) - - - -  
160  
140  
120  
100  
80  
140  
130  
120  
110  
100  
90  
R
G
= 2Ω , V = 15V  
GE  
R
G
= 2Ω , VGE = 15V  
V
= 480V  
CE  
VCE = 480V  
T
J
= 125ºC  
I
= 100A  
C
I
= 50A  
C
85  
60  
T
J
= 25ºC  
70  
60  
75  
40  
80  
20  
70  
40  
65  
20  
30  
40  
50  
60  
80  
90  
100  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
IC - Amperes  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXGR72N60C3  
Fig. 18. Inductive Turn-on  
Fig. 19. Inductive Turn-on  
Switching Times vs. Gate Resistance  
Switching Times vs. Collector Current  
160  
140  
120  
100  
80  
60  
55  
50  
45  
40  
35  
30  
25  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
38  
36  
34  
32  
30  
28  
26  
24  
22  
20  
18  
t r i  
t
d(on) - - - -  
t r i  
td(on) - - - -  
T
J
= 125ºC, V = 15V  
GE  
R
G
= 2ꢀ , V = 15V  
GE  
V
= 480V  
CE  
V
= 480V  
CE  
I
= 100A  
C
T
J
= 25ºC, 125ºC  
60  
40  
I
= 50A  
8
C
20  
2
3
4
5
6
7
9
10 11 12 13 14 15  
20  
30  
40  
50  
60  
70  
80  
90  
100  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
120  
110  
100  
90  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
t r i  
t
d(on) - - - -  
R
G
= 2Ω , V = 15V  
GE  
V
= 480V  
CE  
80  
I
= 100A  
C
70  
60  
50  
40  
30  
I
= 50A  
C
20  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: G_72N60C3(8D)11-25-09-C  
厂商 型号 描述 页数 下载

IXYS

 		IXGA10N60 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

IXYS

 		IXGA10N60A 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

ETC

 		IXGA10N60AU1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

ETC

 		IXGA10N60U1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

IXYS

 		IXGA12N100 IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100A IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100AU1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N100U1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N120A2 IGBT优化切换至为5KHz[ IGBT Optimized for switching up to 5KHz ] 5 页

IXYS

 		IXGA12N120A3 GenX3 1200V的IGBT[ GenX3 1200V IGBTs ] 5 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.261013s