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IXFT16N120PHV

型号：

IXFT16N120PHV

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

185 K

下载PDF手册
Advance Technical Information  
PolarTM HiPerFETTM  
Power MOSFET  
VDSS = 1200V  
ID25 = 16A  
RDS(on) 950m  
300ns  
IXFT16N120PHV  
trr  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-268HV (IXTT)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
S
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
1200  
1200  
V
V
VDGR  
D (Tab)  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
16  
35  
A
A
IA  
TC = 25C  
TC = 25C  
8
A
EAS  
800  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
15  
V/ns  
W
Features  
660  
High Voltage Package  
Fast Recovery Diode  
Avalanche Rated  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
Low Package Inductance  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Advantages  
Easy to Mount  
Space Savings  
High Power Density  
Weight  
4
g
Applications  
High Voltage Switch-Mode and  
Resonant-Mode Power Supplies  
High Voltage Pulse Power Applications  
High Voltage Discharge Circuits in  
Lasers Pulsers, Spark Igniters, RF  
Generators  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
1200  
3.5  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 1mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
6.5  
High Voltage DC-DC Converters  
High Voltage DC-AC Inverters  
          200 nA  
IDSS  
25 A  
TJ = 125C  
2.5 mA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
950 m  
DS100702(01/16)  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXFT16N120PHV  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
11  
17  
S
Ciss  
Coss  
Crss  
6900  
390  
48  
pF  
pF  
pF  
RGi  
Gate Input Resistance  
1.4  
td(on)  
tr  
td(off)  
tf  
35  
28  
66  
35  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 2(External)  
Qg(on)  
Qgs  
120  
37  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
47  
RthJC  
0.19 C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
16  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
64  
1.5  
300  
trr  
ns  
A
IF = 8A, -di/dt = 100A/s  
IRM  
QRM  
7.5  
VR = 100V, VGS = 0V  
0.75  
μC  
Note  
1. Pulse test, t 300s, duty cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFT16N120PHV  
Fig. 1. Output Characteristics TJ = @ 25ºC  
Fig. 2. Extended Output Characteristics TJ = @ 25ºC  
16  
14  
12  
10  
8
V
= 10V  
8V  
24  
20  
16  
12  
8
GS  
V
= 10V  
8V  
GS  
7V  
7V  
6
6V  
5V  
6V  
5V  
4
4
2
0
0
0
2
4
6
8
10  
12  
14  
16  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 8A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics TJ = @ 125ºC  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
16  
14  
12  
10  
8
V
= 10V  
GS  
V
= 10V  
GS  
8V  
7V  
I
= 16A  
D
6V  
I
= 8A  
D
6
4
2
5V  
0
0
5
10  
15  
20  
25  
30  
35  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 8A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
18  
16  
14  
12  
10  
8
V
= 10V  
GS  
T = 125ºC  
J
6
4
T = 25ºC  
J
2
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
22  
24  
26  
TC - Degrees Centigrade  
ID - Amperes  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXFT16N120PHV  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
16  
14  
12  
10  
8
18  
16  
14  
12  
10  
8
T
J
= - 40ºC  
T
J
= 125ºC  
25ºC  
- 40ºC  
25ºC  
125ºC  
6
6
4
4
2
2
0
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
0
2
4
6
8
10  
12  
14  
16  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
10  
9
8
7
6
5
4
3
2
1
0
V
= 600V  
DS  
I
I
= 8A  
D
G
= 10mA  
T
J
= 125ºC  
T
J
= 25ºC  
0
0
20  
40  
60  
80  
100  
120  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Breakdown and Threshold Voltages vs.  
Junction Temperature  
Fig. 11. Capacitance  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
100,000  
10,000  
1,000  
100  
f
= 1 MHz  
BV  
DSS  
C
iss  
C
oss  
V
GS(th)  
C
rss  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFT16N120PHV  
Fig. 13. Maximum Transient Thermal Impedance  
aaa  
0.30  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_16N120P(85) 09-12-12-B  
IXFT16N120PHV  
TO-268HV Outline  
PINS:  
1 - Gate 2 - Source  
3 - Drain  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
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