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IXFH80N25X3

型号：

IXFH80N25X3

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

254 K

下载PDF手册
Preliminary Technical Information  
X3-Class HiPerFETTM  
Power MOSFET  
VDSS = 250V  
ID25 = 80A  
RDS(on) d 16m:  
IXFA80N25X3  
IXFP80N25X3  
IXFQ80N25X3  
IXFH80N25X3  
TO-263 AA (IXFA)  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
G
S
D (Tab)  
TO-220AB (IXFP)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
D
D (Tab)  
TJ = 25qC to 150qC  
250  
250  
V
V
S
TO-3P (IXFQ)  
VDGR  
TJ = 25qC to 150qC, RGS = 1M:  
VGSS  
VGSM  
Continuous  
Transient  
r20  
r30  
V
V
G
D
S
ID25  
IDM  
TC = 25qC  
TC = 25qC, Pulse Width Limited by TJM  
80  
A
A
220  
D (Tab)  
IA  
TC = 25qC  
TC = 25qC  
40  
A
J
TO-247 (IXFH)  
EAS  
1.2  
dv/dt  
PD  
IS d IDM, VDD d VDSS, TJ d 150°C  
TC = 25qC  
20  
V/ns  
W
390  
G
D
S
D (Tab)  
TJ  
-55 ... +150  
150  
qC  
qC  
qC  
TJM  
Tstg  
G = Gate  
S = Source  
D
= Drain  
-55 ... +150  
Tab = Drain  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
z
International Standard Packages  
Low RDS(ON) and QG  
Avalanche Rated  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220, TO-247 & TO-3P)  
10..65 / 2.2..14.6  
N/lb  
Nm/lb.in  
z
z
z
1.13 / 10  
Weight  
TO-263  
TO-220  
TO-3P  
2.5  
3.0  
5.5  
6.0  
g
g
g
g
Low Package Inductance  
TO-247  
Advantages  
z
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25qC, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250zA  
VDS = VGS, ID = 1.5mA  
VGS = r20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
250  
V
V
2.5  
4.5  
Applications  
z
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀr100 nA  
PA  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
IDSS  
5
z
TJ = 125qC  
350 PA  
z
z
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
13  
16 m:  
z
Robotics and Servo Controls  
DS100753B(6/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXFA80N25X3 IXFP80N25X3  
IXFQ80N25X3 IXFH80N25X3  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25qC, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
Gate Input Resistance  
38  
64  
S
RGi  
1.6  
:
Ciss  
Coss  
Crss  
5430  
890  
1.6  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
Effective Output Capacitance  
Co(er)  
Co(tr)  
320  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
VDS = 0.8 • VDSS  
1410  
td(on)  
tr  
td(off)  
tf  
30  
17  
65  
8
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
RG = 5: (External)  
Qg(on)  
Qgs  
83  
27  
24  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.32 qC/W  
TO-220  
TO-247& TO-3P  
0.50  
0.25  
qC/W  
qC/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25qC, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
80  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
320  
1.4  
V
trr  
QRM  
IRM  
105  
760  
14.5  
ns  
IF = 40A, -di/dt = 100A/zs  
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀnC  
VR = 100V  
A
Note 1. Pulse test, t d 300Ps, duty cycle, dꢀd 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXFA80N25X3 IXFP80N25X3  
IXFQ80N25X3 IXFH80N25X3  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
80  
70  
60  
50  
40  
30  
20  
10  
0
350  
300  
250  
200  
150  
100  
50  
V
= 10V  
9V  
GS  
V
= 10V  
GS  
9V  
8V  
7V  
8V  
7V  
6V  
5V  
6V  
5V  
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
22  
24  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 40A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
8V  
GS  
V
= 10V  
GS  
7V  
6V  
I
= 80A  
D
I
= 40A  
D
5V  
4V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
0.5  
1
1.5  
2
2.5  
3
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 40A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.6  
4.2  
3.8  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
= 10V  
GS  
T
J
= 125oC  
BV  
DSS  
T
J
= 25oC  
V
GS(th)  
0
50  
100  
150  
200  
250  
300  
350  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
TJ - Degrees Centigrade  
ID - Amperes  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXFA80N25X3 IXFP80N25X3  
IXFQ80N25X3 IXFH80N25X3  
Fig. 7. Maximum Drain Current vs. Case Temperature  
Fig. 8. Input Admittance  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
140  
120  
100  
80  
60  
T
J
= 125oC  
25oC  
- 40oC  
40  
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 9. Transconductance  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
140  
120  
100  
80  
400  
350  
300  
250  
200  
150  
100  
50  
T
J
= - 40oC  
25oC  
125oC  
60  
T
J
= 125oC  
40  
T
J
= 25oC  
20  
0
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
0
20  
40  
60  
80  
100  
120  
140  
ID - Amperes  
VSD - Volts  
Fig. 11. Gate Charge  
Fig. 12. Capacitance  
10  
8
100,000  
10,000  
1,000  
100  
V
= 125V  
DS  
I
I
= 40A  
D
G
= 10mA  
C
iss  
6
C
C
oss  
4
rss  
2
10  
= 1 MHz  
f
0
1
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
1
10  
100  
1000  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFA80N25X3 IXFP80N25X3  
IXFQ80N25X3 IXFH80N25X3  
Fig. 14. Forward-Bias Safe Operating Area  
Fig. 13. Output Capacitance Stored Energy  
14  
12  
10  
8
1000  
100  
10  
R
DS(  
on  
Limit  
)
25zs  
100zs  
6
4
1
T = 150oC  
J
T
= 25oC  
C
1ms  
2
Single Pulse  
0.1  
0
10  
100  
1,000  
0
50  
100  
150  
200  
250  
300  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_80N25X3 (25-S301) 3-07-17-A  
IXFA80N25X3 IXFP80N25X3  
IXFQ80N25X3 IXFH80N25X3  
TO-263 Outline  
TO-220 Outline  
1 = Gate  
2 = Drain  
3 = Source  
4 = Drain  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
TO-247 Outline  
TO-3P Outline  
D
A
A
B
A2  
E
Q
S
D2  
P1  
R
D1  
D
4
1
2
3
L1  
C
E1  
L
A1  
b
C
b2  
1 - Gate  
2,4 - Drain  
3 - Source  
b4  
e
Pins: 1 - Gate  
2 - Drain  
3 - Source 4 - Drain  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
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