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3SK223-UIO

型号：

3SK223-UIO

品牌：

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数：

9 页

PDF大小：

201 K

下载PDF手册
To our customers,  
Old Company Name in Catalogs and Other Documents  
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology  
Corporation, and Renesas Electronics Corporation took over all the business of both  
companies. Therefore, although the old company name remains in this document, it is a valid  
Renesas Electronics document. We appreciate your understanding.  
Renesas Electronics website: http://www.renesas.com  
April 1st, 2010  
Renesas Electronics Corporation  
Issued by: Renesas Electronics Corporation (http://www.renesas.com)  
Send any inquiries to http://www.renesas.com/inquiry.  
Notice  
1.  
2.  
All information included in this document is current as of the date this document is issued. Such information, however, is  
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please  
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to  
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.  
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights  
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.  
No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights  
of Renesas Electronics or others.  
3.  
4.  
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.  
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of  
semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software,  
and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by  
you or third parties arising from the use of these circuits, software, or information.  
5.  
When exporting the products or technology described in this document, you should comply with the applicable export control  
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Electronics products or the technology described in this document for any purpose relating to military applications or use by  
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6.  
7.  
Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics  
does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages  
incurred by you resulting from errors in or omissions from the information included herein.  
Renesas Electronics products are classified according to the following three quality grades: “Standard”, “High Quality”, and  
“Specific”. The recommended applications for each Renesas Electronics product depends on the product’s quality grade, as  
indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular  
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consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise  
expressly specified in a Renesas Electronics data sheets or data books, etc.  
“Standard”:  
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual  
equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots.  
“High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-  
crime systems; safety equipment; and medical equipment not specifically designed for life support.  
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systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare  
intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.  
8.  
9.  
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics,  
especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation  
characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or  
damages arising out of the use of Renesas Electronics products beyond such specified ranges.  
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have  
specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further,  
Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to  
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12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this  
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(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-  
owned subsidiaries.  
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.  
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
3SK223  
RF AMPLIFIER FOR CATV TUNER  
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR  
4 PINS MINI MOLD  
FEATURES  
PACKAGE DIMENSIONS  
•
The Characteristic of Cross-Modulation is good.  
(Unit: mm)  
CM = 101 dBµ TYP. @ f = 470 MHz, GR = –30 dB  
+0.2  
.8  
–0.3  
•
Low Noise Figure:  
NF1 = 2.2 dB TYP. (f = 470 MHz)  
0.2  
1.5  
NF2 = 0.9 dB TYP. (f = 55 MHz)  
GPS = 20 dB TYP. (f = 470 MHz)  
•
•
•
•
•
High Power Gain:  
Enhancement Type.  
Suitable for use as RF amplifier in CATV tuner.  
Automatically Mounting:  
Small Package:  
Embossed Type Taping  
4 Pins Mini Mold  
5°  
5°  
5°  
5°  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
Drain to Source Voltage  
Gate1 to Source Voltage  
Gate2 to Source Voltage  
Gate1 to Drain Voltage  
Gate2 to Drain Voltage  
Drain Current  
VDSX  
VG1S  
VG2S  
VG1D  
VG2D  
ID  
18  
8 ( 10)*1  
8 ( 10)
18  
V
V
8  
V
25  
mA  
mW  
°C  
°C  
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
*1 RL ≥ 10 kΩ  
PD  
200  
1. Source  
2. Drain  
125  
Tstg  
–55 to +125  
3. Gate 2  
4. Gate 1  
PRECAUTION  
Avoid high static votager electric fields so that this device would not suffer from any damage due to those voltage  
or fields.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PU10028EJ01V0DS (1st edition)  
(Previous No. P10575EJ2V0DS00)  
Date Published October 2001 CP(K)  
Printed in Japan  
The mark  
shows major revised points.  
NEC Corporation 1989  
NEC Compound Semiconductor Devices 2001  
3SK223  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
CHARACTERISTIC  
SYMBOL  
MIN.  
18  
TYP.  
MAX.  
UNIT  
V
TEST CONDITIONS  
Drain to Source Breakdown  
Voltage  
BVDSX  
VG1S = VG2S = –2 V, ID = 10 µA  
Drain Current  
IDSX  
0.01  
0
8.0  
mA  
V
VDS = 5 V, VG2S = 4 V, VG1S = 0.75 V  
Gate1 to Source Cutoff  
Voltage  
VG1S(off)  
+1.0  
VDS = 6 V, VG2S = 3 V, ID = 10 µA  
Gate2 to Source Cutoff  
Voltage  
VG2S(off)  
0
+1.0  
V
VDS = 6 V, VG1S = 3 V, ID = 10 µA  
Gate1 Reverse Current  
Gate2 Reverse Current  
IG1SS  
IG2SS  
|yfs|  
20  
20  
nA  
nA  
VDS = 0, VG2S = 0, VG1S = 8 V  
VDS = 0, VG1S = 0, VG2S = 8 V  
Forward Transfer  
Admittance  
15  
19.5  
mS  
VDS = 5 V, VG2S = 4 V, ID = 10 mA  
f = 1 kHz  
VDS = 6 V, VG2S = 3 0 mA  
f = 1 MHz  
Input Capacitance  
Output Capacitance  
Ciss  
2.5  
0.9  
3.0  
1.2  
3.5  
1.5  
pF  
pF  
pF  
CDSS  
Crss  
Reverse Transfer  
Capacitance  
0.015  
0.03  
V, V2S = 3 V, ID = 10 mA  
70 MHz  
Power Gain  
GPS  
17.0  
20.0  
2.2  
dB  
dB  
d
Noise Figure 1  
Noise Figure 2  
NF1  
NF2  
3.2  
2.4  
0.9  
VDS = 6 V, VG2S = 3 V, ID = 10 mA  
f = 55 MHz  
IDSX Classification  
Class  
U90/UI0*  
U90  
0.01 to 3.0  
U91/UIA*  
U91  
Marking  
IDSX (mA)  
1.0 to 8.0  
* Old Specification/New Specification  
2
Data Sheet PU10028EJ01V0DS  
3SK223  
TYPICAL CHARACTERISTICS (TA = 25 °C)  
TOTAL POWER DISSIPATION vs.  
AMBIENT TEMPERATURE  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
400  
300  
200  
100  
VG2S = 3 V  
25  
20  
15  
10  
5
V
G1S = 1.8 V  
1.6 V  
1.4 V  
1.2 V  
1.0 V  
0.8 V  
0.6 V  
0
25  
50  
75  
100  
125  
3
6
9
12  
15  
0
T
A
– Ambient Temperature – °C  
VDS – Drain rce Voltage – V  
DRAIN CURRENT vs.  
GATE1 TO SOURCE VOLTAGE  
FORWARANSFER ADMITTANCE vs.  
GA1 TO SOURCE VOLTAGE  
V
G2S = 3.5 V  
DS = 6 V  
f = 1 kHz  
25  
20  
15  
10  
5
32  
24  
16  
8
V
DS = 6 V  
3.0 V  
2.5 V  
2.0 V  
V
G2S = 3.5 V  
2.5 V  
2.0 V  
3.0 V  
1.5 V  
1.5 V  
1.0 V  
1.0 V  
2.0  
G1S – Gate1 to Source Voltge –
0.5 V  
0.5  
1.0  
1.5  
.5  
0.5  
1.0  
1.5  
2.0  
2.5  
0
0
V
VG1S – Gate1 to Source Voltage – V  
FORWARD TRANSFER ADMITNCE vs.  
DRAIN CURRENT  
INPUT CAPACITANCE vs.  
GATE2 TO SOURCE VOLTAGE  
5.0  
4.0  
3.0  
2.0  
1.0  
0
V
DS = 6 V  
I
D
= 10 mA  
40  
32  
24  
1
(at VDS = 6 V  
f = 1 kHz  
V
G2S = 3 V)  
f = 1 MHz  
V
G2S = 3.5 V  
3.0 V  
2.0 V  
2.5 V  
1.5 V  
8
1.0 V  
4
12  
16  
20  
I – Drain Current – mA  
D
–1.0  
0
1.0  
2.0  
3.0  
4.0  
V
G2S – Gate2 to Source Voltage – V  
Data Sheet PU10028EJ01V0DS  
3
3SK223  
OUTPUT CAPACITANCE vs.  
GATE2 TO SOURCE VOLTAGE  
POWER GAIN AND NOISE FIGURE vs.  
GATE2 TO SOURCE VOLTAGE  
2.5  
2.0  
1.5  
1.0  
0.5  
0
10  
I
D
= 10 mA  
f = 470 MHz  
G
PS  
(at VDS = 6 V  
ID = 10 mA  
20  
10  
VG2S = 3 V  
)
(at VDS = 6 V  
f = 1 MHz  
VG2S = 3 V)  
5
0
–10  
–20  
NF  
0
–1.0  
0
1.0  
2.0  
3.0  
4.0  
–2.0  
0
2.0  
4
6.0  
8.0  
V
G2S – Gate2 to Source Voltage – V  
VG2S – Gate2 to Source age – V  
4
Data Sheet PU10028EJ01V0DS  
3SK223  
GPS AND NF TEST CIRCUIT AT f = 470 MHz  
V
G2S  
1 000 pF  
22 kΩ  
1 000 pF  
Ferrite Beads  
40 pF OUTPUT  
L
2
INPUT 40 pF  
50 Ω  
50 Ω  
L
1
1 000 pF  
15 pF  
15 pF  
1 000 pF  
22 k  
Ω
L
3
1 000 pF  
1 000 pF  
VG1S  
φ
φ
φ
1.2 mm U.E.W 5 mm 1T  
L
L
L
1
2
3
:
φ
:
1.2 mm U.E.W 5 mm 1T  
µ
: REC 2.2  
H
NF TEST CIRCUIT AT f = 55 MHz  
V
G2S  
V
DS  
RFC  
Ferrite  
Beads  
2.2 kΩ  
1 500 pF  
1 500 p
1 000 pF  
OUTPUT  
27 pF  
27 pF  
INPUT  
47 kΩ  
3.3 kΩ  
47 kΩ  
3.3 kΩ  
50 Ω  
50 Ω  
1 000 pF  
V
G1S  
Data Sheet PU10028EJ01V0DS  
5
3SK223  
•
The information in this document is current as of October, 2001. The information is sujecto  
change without notice. For actual design-in, refer to the latest publications of NEC's data shets or  
data books, etc., for the most up-to-date specifications of NEC semiconductor prouctsNot all  
products and/or types are available in every country. Please check with an NEC saleresentative  
for availability and additional information.  
•
•
No part of this document may be copied or reproduced in any form or by anans without prior  
written consent of NEC. NEC assumes no responsibility for any errors that may appis document.  
NEC does not assume any liability for infringement of patents, copyrights or other telleal property rights of  
third parties by or arising from the use of NEC semiconductor products lin is document or any other  
liability arising from the use of such products. No license, express, impotherwise, is granted under any  
patents, copyrights or other intellectual property rights of NEC or others.  
•
•
•
Descriptions of circuits, software and other related information ithis docuent are provided for illustrative  
purposes in semiconductor product operation and applicatioxamples. The incorporation of these  
circuits, software and information in the design of customepment shall be done under the full  
responsibility of customer. NEC assumes no responsibility for aosses incurred by customers or third  
parties arising from the use of these circuits, software and rmation.  
While NEC endeavours to enhance the quality, reliability and afey of NEC semiconductor products, customers  
agree and acknowledge that the possibility of defects threof cannot be eliminated entirely. To minimize  
risks of damage to property or injury (includindeath) to persons arising from defects in NEC  
semiconductor products, customers must incrpate sufficient safety measures in their design, such as  
redundancy, fire-containment, and anti-failure eatures.  
NEC semiconductor products are classified nto e following three quality grades:  
"Standard", "Special" and "Specific". he "Secific" quality grade applies only to semiconductor products  
developed based on a customer-signad "quality assurance program" for a specific application. The  
recommended applications of a semionductor product depend on its quality grade, as indicated below.  
Customers must check the qualitgrade of each semiconductor product before using it in a particular  
application.  
"Standard": Computers, ouipment, communications equipment, test and measurement equipment, audio  
and visal equipment, home electronic appliances, machine tools, personal electronic equipment  
and indstriaobots  
"Special": Tansportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
semanti-crime systems, safety equipment and medical equipment (not specifically designed  
or le support)  
"S: Acraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The qgrade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's  
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not  
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness  
to support a given application.  
(Note)  
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.  
and also includes its majority-owned subsidiaries.  
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for  
NEC (as defined above).  
M8E 00. 4 - 0110  
6
Data Sheet PU10028EJ01V0DS  
3SK223  
Business issue  
NEmpond Semiconductor Devices, Ltd.  
Group, Sales Division TEL: +81-3-3798-6372 FAX: +81-3-3798-6783 E-mail: salesinfo@csd-nec.com  
Nound Semiconductor Devices Hong Kong Limited  
Hoong Head Office  
Taipei Branch Office  
Korea Branch Office  
TEL: +852-3107-7303  
FAX: +852-3107-7309  
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859  
TEL: +82-2-528-0301  
FAX: +82-2-528-0302  
NEC Electron Devices European Operations  
http://www.nec.de/  
TEL: +49-211-6503-101 FAX: +49-211-6503-487  
California Eastern Laboratories, Inc.  
http://www.cel.com/  
TEL: +1-408-988-3500 FAX: +1-408-988-0279  
Technical issue  
NEC Compound Semiconductor Devices, Ltd.  
http://www.csd-nec.com/  
Sales Engineering Group, Sales Division  
E-mail: techinfo@csd-nec.com FAX: +81-44-435-1918  
0110  
厂商 型号 描述 页数 下载

ETC

 		3SK101 晶体管| MOSFET | N沟道| 20V V（ BR ） DSS |我30MA （D ） | MICRO -X\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | MICRO-X ] 1 页

ETC

 		3SK102 晶体管| MOSFET | N沟道| 20V V（ BR ） DSS |我30MA （D ） | MICRO -X\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | MICRO-X ] 1 页

ETC

 		3SK107 晶体管| MOSFET | N沟道| 20V V（ BR ） DSS |我30MA （D ） | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

 		3SK107E 晶体管| MOSFET | N沟道| 20V V（ BR ） DSS |我30MA （D ） | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

 		3SK107F 晶体管| MOSFET | N沟道| 20V V（ BR ） DSS |我30MA （D ） | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

 		3SK107G 晶体管| MOSFET | N沟道| 20V V（ BR ） DSS |我30MA （D ） | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

 		3SK108 晶体管| MOSFET | N沟道\n[ TRANSISTOR | MOSFET | N-CHANNEL ] 1 页

ETC

 		3SK108Q 晶体管| MOSFET | N沟道| 20V V（ BR ） DSS |我30MA （D ） | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

ETC

 		3SK108R 晶体管| MOSFET | N沟道| 20V V（ BR ） DSS |我30MA （D ） | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

ETC

 		3SK108S 晶体管| MOSFET | N沟道| 20V V（ BR ） DSS |我30MA （D ） | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

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