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VUO192-16NO7

型号：

VUO192-16NO7

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

158 K

下载PDF手册
VUO192-16NO7  
3~  
Rectifier  
Standard Rectifier Module  
VRRM  
IDAV  
IFSM  
V
= 1600  
240 A  
=
=
2800 A  
3~ Rectifier Bridge  
Part number  
VUO192-16NO7  
B-  
C~ D~ E~  
A+  
PWS-E Flat  
Package:  
Features / Advantages:  
Applications:  
● Package with DCB ceramic  
● Improved temperature and power cycling  
● Planar passivated chips  
● Very low forward voltage drop  
● Very low leakage current  
● Diode for main rectification  
● Industry standard outline  
● RoHS compliant  
● Easy to mount with two screws  
● Height: 17 mm  
● For three phase bridge configurations  
● Supplies for DC power equipment  
● Input rectifiers for PWM inverter  
● Battery DC power supplies  
● Base plate: Copper  
● Field supply for DC motors  
internally DCB isolated  
● Advanced power cycling  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130328a  
© 2013 IXYS all rights reserved  
VUO192-16NO7  
Ratings  
Rectifier  
Conditions  
Symbol  
VRSM  
Definition  
min. typ. max. Unit  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 150°C  
TVJ = 25°C  
1700  
1600  
200  
V
V
max. non-repetitive reverse blocking voltage  
max. repetitive reverse blocking voltage  
VRRM  
IR  
reverse current  
VR = 1600 V  
VR = 1600 V  
µA  
3.5 mA  
forward voltage drop  
VF  
80  
1.07  
V
V
V
V
A
IF =  
A
1.36  
0.96  
1.33  
240  
IF = 240 A  
IF = 80 A  
IF = 240 A  
TC = 110°C  
rectangular  
TVJ  
=
°C  
125  
bridge output current  
TVJ = 150°C  
TVJ = 150°C  
IDAV  
d = ⅓  
VF0  
0.74  
V
threshold voltage  
slope resistance  
for power loss calculation only  
rF  
2.4 mΩ  
0.4 K/W  
K/W  
thermal resistance junction to case  
thermal resistance case to heatsink  
RthJC  
RthCH  
Ptot  
0.15  
TC = 25°C  
TVJ = 45°C  
VR = 0 V  
310  
2.80  
3.03  
2.38  
2.57  
W
kA  
kA  
kA  
kA  
total power dissipation  
max. forward surge current  
IFSM  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
VR = 400 V; f = 1 MHz  
TVJ = 150°C  
VR = 0 V  
value for fusing  
I²t  
TVJ = 45°C  
VR = 0 V  
39.2 kA²s  
38.1 kA²s  
28.3 kA²s  
27.5 kA²s  
pF  
TVJ = 150°C  
VR = 0 V  
CJ  
TVJ = 25°C  
133  
junction capacitance  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130328a  
© 2013 IXYS all rights reserved  
VUO192-16NO7  
Ratings  
Package PWS-E Flat  
Symbol  
IRMS  
Definition  
Conditions  
per terminal  
min. typ. max.  
250  
Unit  
A
°C  
°C  
g
RMS current  
Tstg  
-40  
-40  
125  
150  
storage temperature  
virtual junction temperature  
TVJ  
Weight  
220  
MD  
4.25  
4.25  
12.0  
13.0  
3000  
2500  
5.75 Nm  
mounting torque  
terminal torque  
M
5.75 Nm  
T
terminal to terminal  
terminal to backside  
dSpp/App  
dSpb/Apb  
mm  
mm  
V
creepage distance on surface | striking distance through air  
t = 1 second  
V
isolation voltage  
ISOL  
50/60 Hz, RMS; IISOL ≤ 1 mA  
t = 1 minute  
V
Logo  
Made in Germany  
Circuit Diagram  
Date  
Code  
YCW Lot#  
XXX XX-XXXXX  
Marking on product  
Ordering  
Standard  
Part Number  
Marking on Product  
Delivery Mode  
Box  
Quantity Code No.  
509877  
VUO192-16NO7  
VUO192-16NO7  
5
Similar Part  
Package  
Voltage class  
VUO190-16NO7  
PWS-E  
1600  
TVJ = 150°C  
* on die level  
Equivalent Circuits for Simulation  
Rectifier  
V0  
I
R0  
threshold voltage  
slope resistance *  
V0 max  
R0 max  
0.74  
1.2  
V
mΩ  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130328a  
© 2013 IXYS all rights reserved  
VUO192-16NO7  
Outlines PWS-E Flat  
Max. allowed screw-in depth: 7.2 mm  
M6  
26  
26  
23  
31  
C ~  
D ~  
E ~  
B -  
A +  
4
5
6
3
2
1
12.2  
25  
66  
72  
80  
94  
B-  
C~ D~ E~  
A+  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130328a  
© 2013 IXYS all rights reserved  
VUO192-16NO7  
Rectifier  
105  
240  
2500  
2000  
50 Hz  
0.8 x V RRM  
50Hz, 80% VRRM  
200  
160  
TVJ= 45°C  
IFSM  
TVJ= 150°C  
104  
[A2s]  
120  
IF  
TVJ = 45°C  
[A]  
1500  
80  
[A]  
TVJ = 150°C  
TVJ = 150°C  
40  
0
TVJ = 125°C  
TVJ 25°C  
1.0 1.5  
=
1000  
0.001  
103  
0.5  
1
2
3
4 5 6 7 8 9  
0.01  
0.1  
1
t [ms]  
t [s]  
VF [V]  
Fig. 1 Forward current vs.  
Fig. 2 Surge overload current  
vs. time per diode  
Fig. 3 I2t vs. time per diode  
voltage drop per diode  
100  
80  
280  
240  
200  
160  
120  
80  
RthA  
:
0.2 K/W  
0.4 K/W  
0.6 K/W  
0.8 K/W  
1.0 K/W  
2.0 K/W  
DC =  
1
0.5  
DC =  
1
0.5  
0.4  
0.4  
IdAV  
[A]  
60  
0.33  
0.17  
0.08  
0.33  
0.17  
0.08  
Ptot  
40  
20  
0
[W]  
40  
0
0
20  
40  
60  
80  
100 0  
25 50 75 100 125 150 175  
0
25 50 75 100 125 150  
IdAVM [A]  
Tamb [°C]  
TC [°C]  
Fig. 4 Power dissipation vs. forward current  
and ambient temperature per diode  
Fig. 5 Max. forward current vs.  
case temperature per diode  
1
0.1  
ZthJC  
[K/W]  
Ri  
ti  
0.050 0.02  
0.003 0.01  
0.100 0.225  
0.177 0.8  
0.01  
0.001  
0.070 0.58  
1
10  
100  
1000  
10000  
t [ms]  
Fig. 6 Transient thermal impedance junction to case vs. time per diode  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130328a  
© 2013 IXYS all rights reserved  
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