IXGX 32N170H1
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
PLUS247 Outline (IXGX)
IC = I ; VCE = 10 V
Note 2 C25
25
33
S
Cies
Coes
Cres
3500
250
40
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qg
Qge
Qgc
155
30
51
nC
nC
nC
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V
td(on)
tri
td(off)
tfi
45
38
270
250
15
ns
ns
500 ns
500 ns
25 mJ
R = 2.7 Ω, VCE = 0.8 VCES
NoG te 3
Eoff
td(on)
tri
48
42
ns
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
Eon
6.0
mJ
ns
R = 2.7 Ω, VCE = 0.8 VCES
NoG te 3
td(off)
360
tfi
Eoff
560
22
ns
mJ
RthJC
RthCK
0.35 K/W
K/W
0.15
ReverseDiode(FRED)(Note4)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
VF
TestConditions
I = 70A, V = 0 V, Pulse test,
2.7
V
tF≤ 300 µs,GdEuty cycle d ≤ 2 %
IRM
trr
IF = 50A, V = 0 V, -diF/dt = 800 A/µs
50
A
VR = 600 VGE
150
ns
RthJC
0.4 K/W
Notes:1. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
2. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
3. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG.
4. See DH60-18A and IXGH32N170A datasheets for additional
characteristics
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
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