JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89 Plastic-Encapsulate Transistors
SOT-89
PXT8050 TRANSISTOR (NPN)
FEATURES
Compliment to PXT8550
z
1. BASE
MARKING: Y1
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
40
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
25
V
6
V
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
1.5
A
PC
0.5
W
℃
℃
TJ
150
-55-150
Tstg
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
40
25
5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=100uA, IE=0
V(BR)CEO IC=0.1mA, IB=0
V(BR)EBO IE=100μA, IC=0
V
V
ICBO
ICEO
VCB=40V, IE=0
0.1
0.1
0.1
400
μA
μA
μA
Emitter cut-off current
VCE=20V, IE=0
Emitter cut-off current
IEBO
VEB=5V, IC=0
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VBE
VCE=1V, IC=100mA
VCE=1V, IC=800mA
IC=800mA, IB=80mA
IC=800mA, IB=80mA
VCE=1V, IC=10mA
IB=1A
85
40
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
0.5
1.2
1
V
V
V
Base-emitter positive favor voltage
Transition frequency
VBEF
fT
1.55
V
VCE=10V,IC=50mA,f=30MHz
VCB=10V,IE=0,f=1MHz
100
MHz
pF
output capacitance
Cob
15
CLASSIFICATION OF hFE(1)
Rank
B
C
D
D3
300-400
Range
85-160
120-200
160-300
