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IXGP28N60A3M

型号：

IXGP28N60A3M

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

168 K

下载PDF手册
Advance Technical Information  
GenX3TM 600V  
IGBT  
VCES = 600V  
IC110 = 15A  
VCE(sat)  1.4V  
IXGP28N60A3M  
Ultra Low Vsat PT IGBT for up  
to 5kHz Switching  
OVERMOLDED TO-220  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
G
C
E
TJ = 25°C to 150°C, RGE = 1M  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G = Gate  
E = Emitter  
C
= Collector  
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1ms  
38  
15  
200  
A
A
A
SSOA  
VGE = 15V, TVJ = 125°C, RG = 10  
ICM = 48  
A
(RBSOA)  
Clamped Inductive Load  
@VCE VCES  
PC  
TC = 25°C  
64  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
Features  
Plastic Overmolded Tab  
-55 ... +150  
Optimized for Low Conduction Losses  
Square RBSOA  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
International Standard Package  
Md  
Mounting Torque  
1.13 / 10  
3.0  
Nm/lb.in  
g
Advantages  
Weight  
High Power Density  
Extremely Rugged  
Low Gate Drive Requirement  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
600  
3.0  
Typ.  
Max.  
Power Inverters  
UPS  
Motor Drives  
SMPS  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
5.0  
PFC Circuits  
25 A  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
Inrush Current Portection Circuits  
TJ = 125C  
TJ = 125C  
250 A  
IGES  
VCE = 0V, VGE = 20V  
100 nA  
VCE(sat)  
IC = 24A, VGE = 15V, Note 1  
1.4  
V
V
1.3  
© 2016 IXYS CORPORATION, All Rights Reserved  
DS100734(6/16)  
IXGP28N60A3M  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
OVERMOLDED TO-220  
(IXGP...M)  
Min.  
Typ.  
Max.  
gfs  
IC = 24A, VCE = 10V, Note 1  
17  
30  
S
Cies  
Coes  
Cres  
1790  
100  
26  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
Qg(on)  
Qge  
Qgc  
66  
13  
24  
nC  
nC  
nC  
1
2
3
IC = 24A, VGE = 15V, VCE = 0.5 • VCES  
td(on)  
tri  
Eon  
td(off)  
tfi  
18  
26  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 24A, VGE = 15V  
0.7  
300  
260  
2.4  
mJ  
ns  
VCE = 480V, RG = 10  
ns  
Note 2  
Eof  
mJ  
f
Terminals: 1 - Gate  
2 - Collector  
td(on)  
tri  
20  
26  
ns  
ns  
Inductive load, TJ = 125°C  
3 - Emitter  
IC = 24A, VGE = 15V  
Eon  
td(off)  
tfi  
1.4  
470  
400  
4.2  
mJ  
ns  
VCE = 480V, RG = 10  
ns  
Note 2  
Eoff  
mJ  
RthJC  
RthCS  
1.94 °C/W  
°C/W  
0.50  
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGP28N60A3M  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
300  
250  
200  
150  
100  
50  
V
= 15V  
GE  
V
= 15V  
GE  
13V  
11V  
13V  
9V  
7V  
11V  
9V  
7V  
0
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
0
2
4
6
8
10  
12  
14  
16  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
50  
40  
30  
20  
10  
0
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
V
= 15V  
GE  
V
= 15V  
GE  
13V  
11V  
I
= 48A  
C
9V  
7V  
I
I
= 24A  
= 12A  
C
C
5V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
T
J
= 25ºC  
I
= 48A  
C
24A  
12A  
T
= 125ºC  
J
25ºC  
- 40ºC  
5
6
7
8
9
10  
11  
12  
13  
14  
15  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
VGE - Volts  
VGE - Volts  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXGP28N60A3M  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
45  
40  
35  
30  
25  
20  
15  
10  
5
16  
14  
12  
10  
8
V
= 300V  
CE  
I
I
= 24A  
C
G
T
J
= - 40ºC  
= 10mA  
25ºC  
125ºC  
6
4
2
0
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
0
10  
20  
30  
40  
50  
60  
70  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Reverse-Bias Safe Operating Area  
Fig. 10. Capacitance  
10,000  
1,000  
100  
50  
40  
30  
20  
10  
0
f
= 1 MHz  
C
ies  
C
oes  
T
= 125ºC  
J
R
= 10  
G
dv / dt < 10V / ns  
C
res  
10  
100  
150  
200  
250  
300  
350  
400  
450  
500  
550  
600  
650  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
10  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGP28N60A3M  
Fig. 13. Inductive Switching  
Fig. 12. Inductive Switching  
Energy Loss vs. Junction Temperature  
Energy Loss vs. Gate Resistance  
8
7
6
5
4
3
2
1
0
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
10  
9
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
E
R
E
E
E
off  
on  
off  
on  
= 10ꢀ V  
  
= 15V  
GE  
G
T
J
= 125ºC , V = 15V  
GE  
I
I
= 40A  
= 20A  
C
C
V
= 480V  
CE  
8
V
= 480V  
CE  
7
I
=40A  
C
6
5
I
I
= 20A  
= 10A  
4
C
C
3
2
I
= 10A  
C
1
10  
30  
50  
70  
90  
110  
130  
150  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 14. Inductive Switching  
Fig. 15. Inductive Turn-off  
Energy Loss vs. Collector Current  
Switching Times vs. Gate Resistance  
8
7
6
5
4
3
2
1
0
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
540  
520  
500  
480  
460  
440  
420  
400  
380  
360  
340  
1300  
1200  
1100  
1000  
900  
E
R
E
t f i  
td(off)  
off  
on  
T
J
= 125ºC, VGE = 15V  
= 10Ω  
V
  
= 15V  
GE  
G
VCE = 480V  
V
= 480V  
CE  
I
= 10A, 20A, 40A  
C
800  
700  
T
= 125ºC  
J
600  
500  
400  
T
J
= 25ºC  
I
= 10A  
C
300  
10  
15  
20  
25  
30  
35  
40  
10  
30  
50  
70  
90  
110  
130  
150  
IC - Amperes  
RG - Ohms  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
Fig. 17. Inductive Turn-off  
Switching Times vs. Junction Temperature  
560  
520  
480  
440  
400  
360  
320  
280  
240  
200  
160  
620  
520  
480  
440  
400  
360  
320  
280  
240  
200  
560  
520  
480  
440  
400  
360  
320  
280  
240  
t f i  
td(off)  
t f i  
td(off)  
580  
540  
500  
460  
420  
380  
340  
300  
260  
220  
R
G
= 10Ω , V = 15V  
R
= 10ꢀ , V = 15V  
GE  
G
GE  
V
= 480V  
V
= 480V  
CE  
CE  
T
J
= 125ºC  
I
= 40A, 20A, 10A  
C
T
J
= 25ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
10  
15  
20  
25  
30  
35  
40  
TJ - Degrees Centigrade  
IC - Amperes  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXGP28N60A3M  
Fig. 18. Inductive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 19. Inductive Turn-on  
Switching Times vs. Junction Temperature  
130  
110  
90  
130  
110  
90  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
t r i  
td(on)  
T
J
= 125ºC, V = 15V  
GE  
I
= 40A  
C
V
= 480V  
CE  
t r i  
td(on)  
I
= 40A  
C
R
G
= 10 , V = 15V  
  
GE  
V
= 480V  
CE  
70  
70  
I
I
= 20A  
C
I
= 20A  
C
50  
50  
30  
30  
I
= 10A  
C
= 10A  
65  
C
10  
10  
10  
30  
50  
70  
90  
110  
130  
150  
25  
35  
45  
55  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 20. Inductive Turn-on  
Switching Times vs. Collector Current  
50  
45  
40  
35  
30  
25  
20  
15  
10  
24  
23  
22  
21  
20  
19  
18  
17  
16  
t r i  
td(on)  
R
G
= 10 , V = 15V  
  
GE  
V
= 480V  
CE  
T
J
= 125ºC, 25ºC  
25ºC < T < 125ºC  
J
10  
15  
20  
25  
30  
35  
40  
IC - Amperes  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXG_28N60A3 (45) 6-21-16-B  
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