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VUO122-12NO7

型号：

VUO122-12NO7

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

135 K

下载PDF手册
VUO122-12NO7  
3~  
Rectifier  
Standard Rectifier Module  
VRRM  
IDAV  
IFSM  
V
= 1200  
125 A  
=
=
1000 A  
3~ Rectifier Bridge  
Part number  
VUO122-12NO7  
~
~
~
EG 1  
K10 L9 A1  
PS 18  
ECO-PAC2  
Package:  
Features / Advantages:  
Applications:  
● Package with DCB ceramic  
● Improved temperature and power cycling  
● Planar passivated chips  
● Very low forward voltage drop  
● Very low leakage current  
● Diode for main rectification  
● Industry standard outline  
● RoHS compliant  
● Soldering pins for PCB mounting  
● Height: 9 mm  
● Base plate: DCB ceramic  
● Reduced weight  
● For three phase bridge configurations  
● Supplies for DC power equipment  
● Input rectifiers for PWM inverter  
● Battery DC power supplies  
● Field supply for DC motors  
● Advanced power cycling  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130327a  
© 2013 IXYS all rights reserved  
VUO122-12NO7  
Ratings  
Rectifier  
Conditions  
Symbol  
VRSM  
Definition  
min. typ. max. Unit  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 150°C  
TVJ = 25°C  
1300  
1200  
100  
2
V
V
max. non-repetitive reverse blocking voltage  
max. repetitive reverse blocking voltage  
VRRM  
IR  
reverse current  
VR = 1200 V  
VR = 1200 V  
µA  
mA  
V
forward voltage drop  
VF  
50  
1.13  
1.47  
1.05  
1.49  
125  
IF =  
A
V
IF = 150 A  
IF = 50 A  
IF = 150 A  
TC = 115°C  
rectangular  
TVJ  
=
°C  
V
125  
V
bridge output current  
TVJ = 150°C  
TVJ = 150°C  
A
IDAV  
d = ⅓  
VF0  
0.80  
V
threshold voltage  
slope resistance  
for power loss calculation only  
rF  
4.6 mΩ  
0.6 K/W  
K/W  
thermal resistance junction to case  
thermal resistance case to heatsink  
RthJC  
RthCH  
Ptot  
0.3  
TC = 25°C  
TVJ = 45°C  
VR = 0 V  
205  
1.00  
1.08  
850  
920  
W
kA  
kA  
A
total power dissipation  
max. forward surge current  
IFSM  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
VR = 400 V; f = 1 MHz  
TVJ = 150°C  
VR = 0 V  
A
value for fusing  
I²t  
TVJ = 45°C  
VR = 0 V  
5.00 kA²s  
4.85 kA²s  
3.62 kA²s  
3.52 kA²s  
pF  
TVJ = 150°C  
VR = 0 V  
CJ  
TVJ = 25°C  
35  
junction capacitance  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130327a  
© 2013 IXYS all rights reserved  
VUO122-12NO7  
Ratings  
Package ECO-PAC2  
Symbol  
IRMS  
Definition  
Conditions  
per terminal  
min. typ. max.  
100  
Unit  
A
°C  
°C  
g
RMS current  
Tstg  
-40  
-40  
125  
150  
storage temperature  
virtual junction temperature  
TVJ  
Weight  
MD  
24  
1.5  
2
Nm  
mounting torque  
terminal to terminal  
terminal to backside  
dSpp/App  
dSpb/Apb  
6.0  
10.0  
mm  
mm  
V
creepage distance on surface | striking distance through air  
t = 1 second  
V
3000  
2500  
isolation voltage  
ISOL  
50/60 Hz, RMS; IISOL ≤ 1 mA  
t = 1 minute  
V
Logo  
Made in Germany  
Circuit Diagram  
YYCW Lot#  
XXX XX-XXXXX  
Product number  
Date Code  
Ordering  
Standard  
Part Number  
Marking on Product  
VUO122-12NO7  
Delivery Mode  
Box  
Quantity Code No.  
VUO122-12NO7  
25  
494437  
TVJ = 150°C  
* on die level  
Equivalent Circuits for Simulation  
Rectifier  
V0  
I
R0  
threshold voltage  
slope resistance *  
V0 max  
R0 max  
0.8  
3.4  
V
mΩ  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130327a  
© 2013 IXYS all rights reserved  
VUO122-12NO7  
Outlines ECO-PAC2  
1.55 ±0.2  
10.95 ±0.2  
3.3 ±0.2  
5.7 ±0.2  
1.55 ±0.2  
1.55 ±0.2  
9.4 ±0.2  
A C  
E
G
I
K
1
2
3
10  
11  
12  
B
D
O
F
H
T
J
4
5
6
13  
14  
15  
M
R
W
2
.
7
8
9
16  
17  
18  
0
±
3
.
4
Ø
L N  
P
S
V
X
1.5  
8.3  
43  
51 ±0.2  
~
~
~
EG 1  
K10 L9 A1  
PS 18  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130327a  
© 2013 IXYS all rights reserved  
VUO122-12NO7  
Rectifier  
800  
700  
200  
6000  
5000  
I2t  
4000  
[A2s]  
50 Hz  
VR = 0 V  
0.8 x V RRM  
160  
IF 120  
IFSM  
TVJ = 45°C  
TVJ = 45°C  
600  
500  
400  
[A]  
[A]  
80  
3000  
2000  
1000  
TVJ = 150°C  
TVJ  
=
TVJ = 150°C  
40 125°C  
150°C  
TVJ = 25°C  
0
0.4  
10-3  
10-2  
10-1  
100  
0.8  
1.2  
1.6  
2.0  
1
10  
t [ms]  
VF [V]  
t [s]  
Fig. 3 I2t vs. time per diode  
Fig. 2 Surge overload current  
vs. time per diode  
Fig. 1 Forward current vs.  
voltage drop per diode  
60  
50  
40  
30  
20  
10  
0
DC =  
1
160  
120  
RthJA  
:
DC =  
1
0.5  
0.6 KW  
0.8 KW  
0.5  
0.4  
0.4  
1
2
4
8
KW  
KW  
KW  
KW  
0.33  
0.17  
0.08  
0.33  
0.17  
0.08  
Ptot  
[W]  
IF(AV)M  
80  
40  
0
[A]  
0
10  
20  
30  
40  
50 0  
25  
50  
75  
100  
125  
150  
0
25 50 75 100 125 150  
TA [°C]  
IdAVM [A]  
TC [°C]  
Fig. 4 Power dissipation vs. forward current  
and ambient temperature per diode  
Fig. 5 Max. forward current vs.  
case temperature per diode  
0.7  
0.6  
0.5  
Constants for ZthJC calculation:  
ZthJC  
0.4  
[K/W]  
0.3  
i
Rth (K/W)  
ti (s)  
1
2
3
4
0.08  
0.04  
0.29  
0.19  
0.012  
0.007  
0.036  
0.102  
0.2  
0.1  
0.0  
1
10  
100  
1000  
10000  
t [ms]  
Fig. 6 Transient thermal impedance junction to case vs. time per diode  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130327a  
© 2013 IXYS all rights reserved  
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