ZTX750
ZTX751
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
ZTX750
ZTX751
PARAMETER
SYMBOL
fT
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Transition
Frequency
100 140
100 140
MHz IC=-100mA, VCE=-5V
f=100MHz
Switching Times
ton
40
40
ns
ns
pF
IC=-500mA, VCC=-10V
IB1=IB2=-50mA
toff
450
450
Output
Capacitance
Cobo
30
30
VCB=10V f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance:Junction to Ambient1
Junction to Ambient2
Junction to Case
Rth(j-amb)1
Rth(j-amb)2
Rth(j-case)
175
116
70
°C/W
°C/W
°C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
2.5
2.0
200
D=1 (D.C.)
t
1
D=t1/tP
Case temperature
t
P
1.5
100
D=0.5
1.0
0.5
0
D=0.2
D=0.1
Single Pulse
0
0.0001 0.001
-40 -20
0
20
0.01
0.1
1
10
100
40 60 80 100 120 140 160 180 200
T -Temperature (°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-258
