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IXGT30N60BU1

型号：

IXGT30N60BU1

描述：

HiPerFAST IGBT与二极管[ HiPerFAST IGBT with Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

142 K

下载PDF手册
HiPerFASTTM IGBT  
with Diode  
IXGH 30N60BU1  
IXGT 30N60BU1  
V
= 600 V  
60 A  
= 1.8 V  
tfiCE(sat) = 100 ns  
CES  
I
=
C25  
V
Combi Pack  
TO-268  
(IXGT)  
G
Symbol  
TestConditions  
Maximum Ratings  
E
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
C (TAB)  
TJ = 25°C to 150°C; RGE = 1 MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
TO-247 AD  
IC25  
IC110  
ICM  
TC = 25°C  
60  
30  
A
A
A
TAB)  
TC = 110°C  
G
TC = 25°C, 1 ms  
120  
C
E
SSOA  
(RBSOA)  
VGE = 15 V, TVJ = 125°C, RG = 33 Ω  
Clamped inductive load, L = 100 µH  
ICM = 60  
@ 0.8 VCES  
A
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
PC  
TC = 25°C  
200  
W
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
Ÿ International standard packages  
JEDEC TO-247 SMD surface  
mountable and JEDEC TO-247 AD  
TJM  
Tstg  
-55 ... +150  
Ÿ High frequency IGBT and antiparallel  
FRED in one package  
Maximum Lead and Tab temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Ÿ High current handling capability  
Ÿ Newest generation HDMOSTM  
process  
Md  
Mounting torque, TO-247 AD  
1.13/10 Nm/lb.in.  
Weight  
TO-268  
TO-247 AD  
4
6
g
g
Ÿ MOS Gate turn-on  
- drive simplicity  
Applications  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Ÿ AC motor speed control  
Ÿ DC servo and robot drives  
Ÿ DC choppers  
min. typ. max.  
Ÿ Uninterruptible power supplies (UPS)  
BVCES  
VGE(th)  
ICES  
IC = 750µA, VGE = 0 V  
BVCES temperature coefficient  
600  
2.5  
V
%/K  
0.072  
Ÿ Switched-mode and resonant-mode  
power supplies  
IC = 250 µA, VCE = VGE  
VGE(th) temperature coefficient  
5.5  
V
%/K  
-0.286  
Advantages  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 150°C  
500  
3
µA  
mA  
Ÿ Space savings (two devices in one  
package)  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
Ÿ High power density  
Ÿ Optimized VCE(sat) and switching  
speeds for medium frequency  
applications  
VCE(sat)  
VCE(sat)  
IC = IC110, VGE = 15 V  
IC = IC110, VGE = 15 V  
1.8  
2.0  
V
V
TJ = 150°C  
© 2002 IXYS All rights reserved  
97501E (02/02)  
IXGH 30N60BU1  
IXGT 30N60BU1  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD Outline  
IC = IC110; VCE = 10 V,  
25  
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
P
Cies  
Coes  
Cres  
2710  
240  
50  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
110  
22  
150 nC  
35 nC  
75 nC  
Qge  
Qgc  
IC = IC110, VGE = 15 V, VCE = 0.5 VCES  
e
40  
Dim.  
A
Millimeter  
Min. Max.  
Inches  
Min. Max.  
Inductive load, TJ = 25°C  
td(on)  
tri  
td(off)  
tfi  
25  
30  
ns  
ns  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
IC = IC110, VGE = 15 V, L = 100 µH,  
A
1
VCE = 0.8 VCES, RG = Roff = 4.7 Ω  
A
2
130  
100  
1.0  
220 ns  
190 ns  
2.0 mJ  
b
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
b
1
,
b
2
Eoff  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
5.20  
19.81 20.32  
4.50  
3.65  
6.40 0.232 0.252  
td(on)  
tri  
25  
35  
ns  
ns  
mJ  
ns  
ns  
Inductive load, TJ = 150°C  
e
5.72 0.205 0.225  
.780 .800  
.177  
.140 .144  
IC = IC110, VGE = 15 V, L = 100 µH  
VCE = 0.8 VCES, RG = Roff = 4.7 Ω  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
L
Eon  
td(off)  
tfi  
1
L1  
P3.55  
200  
230  
Q
5.89  
4.32  
R
S
5.49  
.170 .216  
242 BSC  
,
6.15 BSC  
Eoff  
2.5  
mJ  
RthJC  
RthCK  
0.62 K/W  
K/W  
TO-247 AA (D3 PAK)  
0.25  
ReverseDiode(FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
VF  
TestConditions  
min. typ. max.  
IF = IC110, VGE = 0 V,  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
1.6  
15  
V
A
IRM  
IF = IC110, VGE = 0 V, -diF/dt = 240 A/µs  
VR = 360 V  
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V  
10  
35  
trr  
50 ns  
1 K/W  
RthJC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
4.9  
2.7  
.02  
5.1  
2.9  
.25  
.193 .201  
.106 .114  
.001 .010  
Min Recommended Footprint  
A1  
A2  
b
1.15  
1.9  
.4  
1.45  
2.1  
.045 .057  
b2  
C
.75  
.83  
.65  
.016 .026  
D
E
13.80 14.00  
15.85 16.05  
13.3 13.6  
5.45 BSC  
18.70 19.10  
.543 .551  
.624 .632  
.524 .535  
E1  
e
.215 BSC  
.736 .752  
.094 .106  
H
L
2.40  
1.20  
2.70  
1.40  
L1  
.047 .055  
L2  
L3  
L4  
1.00  
1.15  
.039 .045  
.010 BSC  
0.25 BSC  
3.80 4.10  
.150 .161  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715 6,306,728B1  
5,381,025  
IXGH 30N60BU1  
IXGT 30N60BU1  
Fig. 1. Saturation Voltage Characteristics  
Fig. 2. Extended Output Characteristics  
200  
160  
120  
80  
100  
80  
60  
40  
20  
0
V
GE = 15V  
11V  
TJ = 25°C  
TJ = 25°C  
13V  
VGE = 15V  
13V  
11V  
9V  
9V  
7V  
7V  
5V  
40  
5V  
0
0
2
4
6
8
10  
0
1
2
3
4
5
VCE - Volts  
VCE - Volts  
Fig. 3. Saturation Voltage Characteristics  
Fig. 4. Temperature Dependence of VCE(sat)  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
100  
80  
60  
40  
20  
0
TJ = 150°C  
VGE = 15V  
IC = 60A  
VGE = 15V  
13V  
11V  
9V  
7V  
5V  
I
C = 30A  
IC = 15A  
25  
50  
75  
100  
125  
150  
0
1
2
3
4
5
VCE - Volts  
TJ - Degrees C  
Fig. 5. Admittance Curves  
Fig. 6. Temperature Dependence of BVDSS & VGE(th)  
100  
80  
60  
40  
20  
0
10000  
VCE = 10V  
f = 1Mhz  
C
iss  
1000  
100  
10  
C
oss  
TJ = 150°C  
C
rss  
TJ = 25°C  
3
4
5
6
7
8
9
10  
0
5
10 15 20 25 30 35 40  
VCE-Volts  
VGE - Volts  
© 2002 IXYS All rights reserved  
IXGH 30N60BU1  
IXGT 30N60BU1  
Fig. 8. Dependence of EOFF on RG.  
Fig. 7. Dependence of EOFF and EOFF on IC.  
10  
8
8
4
3
2
1
0
TJ = 150°C  
TJ = 150°C  
RG = 4.7Ω  
IC = 60A  
6
E(OFF)  
6
4
4
E(ON)  
IC = 30A  
IC = 15A  
2
2
0
0
80  
0
10  
20  
30  
RG - Ohms  
40  
50  
60  
0
20  
40  
60  
IC - Amperes  
Fig. 9. Gate Charge  
Fig.10.Turn-offSafeOperatingArea  
18  
100  
60  
IC = 30A  
V
CE = 360V  
15  
12  
9
TJ = 150°C  
10  
1
RG = 4.7Ω  
dV/dt < 5V/ns  
6
3
0
0.1  
0
25  
50  
75 100 125 150 175  
0
100  
200  
300  
400  
500  
600  
Qg - nanocoulombs  
VCE - Volts  
Fig. 11. IGBT Transient Thermal Resistance  
1
0.1  
D=0.5  
D=0.2  
D=0.1  
D=0.05  
D=0.02  
D=0.01  
D = Duty Cycle  
0.01  
Single pulse  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715 6,306,728B1  
5,381,025  
IXGH 30N60BU1  
IXGT 30N60BU1  
Fig. 12. Forward current  
versus voltage drop.  
Fig. 13. Recovery charge versus -diF/dt.  
Fig. 14. Peak reverse current versus  
-diF/dt.  
Fig. 15. Dynamic parameters versus  
junction temperature.  
Fig. 16. Reverse recovery time vs -diF/dt.  
Fig. 17. Forward voltage recovery  
and time versus -diF/dt.  
Fig. 18. Transient thermal resistance junction to case.  
© 2002 IXYS All rights reserved  
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