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IXGH32N60BU1

型号：

IXGH32N60BU1

描述：

HiPerFAST IGBT与二极管[ HiPerFAST IGBT with Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

140 K

下载PDF手册
HiPerFASTTM IGBT  
with Diode  
IXGH 32N60BU1 VCES  
IC25  
= 600 V  
= 60 A  
VCE(sat) = 2.3 V  
tfi = 80 ns  
Symbol  
TestConditions  
Maximum Ratings  
TO-247 AD  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
600  
600  
V
V
(TAB)  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
G = Gate,  
C = Collector,  
TAB = Collector  
IC25  
IC90  
ICM  
TC = 25°C  
TC = 90°C  
TC = 25°C, 1 ms  
60  
32  
120  
A
A
A
E = Emitter,  
SSOA  
V
= 15 V, T = 125°C, RG = 33 Ω  
I
= 64  
A
CGlaE mped indVuJctive load, L = 100 µH  
TC = 25°C  
@ 0C.8M VCES  
200  
Features  
(RBSOA)  
z
International standard packages  
PC  
W
JEDEC TO-247 SMD  
z
High frequency IGBT and antiparallel  
FRED in one package  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
z
z
z
High current handling capability  
Newest generation HDMOSTM process  
Maximum Lead and Tab temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
MOS Gate turn-on  
- drive simplicity  
Md  
Mounting torque, TO-247 AD  
1.13/10 Nm/lb.in.  
Applications  
z
Weight  
6
g
AC motor speed control  
z
DC servo and robot drives  
DC choppers  
Uninterruptible power supplies (UPS)  
Switched-mode and resonant-mode  
power supplies  
z
z
z
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Advantages  
z
Space savings (two devices in one  
package)  
BVCES  
VGE(th)  
IC = 750µA, VGE = 0 V  
IC = 250 µA, VCE = VGE  
600  
2.5  
V
z
High power density  
Very fast switching speeds for high  
frequency applications  
5.0  
V
z
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
T = 25°C  
500  
8
µA  
TJJ = 125°C  
mA  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
V
VCE(sat)  
IC = IC90, VGE = 15 V  
2.3  
DS95567C(02/03)  
© 2003 IXYS All rights reserved  
IXGH32N60BU1  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD Outline  
IC = IC90; V = 10 V,  
15  
25  
S
Pulse test, t C≤E 300 µs, duty cycle ≤ 2 %  
P
Cies  
Coes  
Cres  
2700  
270  
50  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
QG  
QGE  
QGC  
110  
23  
40  
150 nC  
35 nC  
75 nC  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
e
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
Inductive load, TJ = 25°C  
td(on)  
tri  
td(off)  
tfi  
25  
20  
100  
80  
ns  
ns  
200 ns  
150 ns  
1.2 mJ  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
IC = IC90, VGE = 15 V, L = 100 µH,  
VCE = 0.8 VCES, RG = Roff = 4.7 Ω  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
,
Eoff  
0.6  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
td(on)  
tri  
Eon  
td(off)  
tfi  
25  
25  
1
120  
120  
ns  
ns  
mJ  
ns  
ns  
Inductive load, TJ = 125°C  
IC = IC90, VGE = 15 V, L = 100 µH  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
.780 .800  
.177  
VCE = 0.8 VCES, RG = Roff = 4.7 Ω  
P
3.55  
5.89  
3.65  
.140 .144  
Q
6.40 0.232 0.252  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
,
Eoff  
1.2  
mJ  
RthJC  
RthCK  
0.62 K/W  
K/W  
0.25  
ReverseDiode(FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
VF  
TestConditions  
min. typ. max.  
IF = I , V = 0 V,  
1.6  
V
PulsCe90testG,Et ≤ 300 µs, duty cycle d ≤ 2 %  
IRM  
trr  
IF = I , VGE = 0 V, -diF/dt = 240 A/µs  
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJJ = 25°C  
10  
15  
A
VR =C3960 0 V  
T = 125°C 150  
ns  
35  
50 ns  
1 K/W  
RthJC  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715 6,306,728B1  
5,381,025  
IXGH32N60BU1  
100  
80  
60  
40  
20  
0
200  
160  
120  
80  
TJ = 25°C  
VGE = 15V  
13V  
TJ = 25°C  
VGE = 15V  
11V  
9V  
13V  
11V  
9V  
7V  
7V  
5V  
40  
5V  
0
0
2
4
6
8
10  
0
1
2
3
4
5
6
7
VCE - Volts  
Fig. 2. Extended Output Characteristics  
VCE - Volts  
Fig. 1. Saturation Voltage Characteristics  
1.75  
1.50  
1.25  
1.00  
0.75  
100  
80  
60  
40  
20  
0
TJ = 125°C  
VGE = 15V  
IC = 64A  
IC = 32A  
IC = 16A  
25  
50  
75  
100  
125  
150  
0
1
2
3
4
5
6
7
VCE - Volts  
TJ - Degrees C  
Fig. 3. Saturation Voltage Characteristics  
Fig. 4. Temperature Dependence of VCE(sat)  
100  
80  
60  
40  
20  
0
1.15  
1.10  
1.05  
1.00  
0.95  
0.90  
0.85  
0.80  
0.75  
0.70  
V
CE = 10V  
VGE(th)  
= 250µA  
IC  
BVCES  
IC = 250µA  
TJ =125°C  
TJ = 25°C  
3
4
5
6
7
8
9
10  
-50 -25  
0
25 50 75 100 125 150  
VGE - Volts  
Fig. 5. Admittance Curves  
TJ - Degrees C  
Fig. 6. Temperature Dependence of BVDSS & VGE(th)  
© 2003 IXYS All rights reserved  
IXGH32N60BU1  
5
4
3
2
1
0
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
5
4
TJ = 125°C  
IC = 32A  
TJ = 125°C  
RG = 10Ω  
E(ON)  
E(ON)  
3
E(OFF)  
E(OFF)  
2
1
0
0
10  
20  
30  
40  
50  
60  
0
20  
40  
IC - Amperes  
60  
80  
RG - Ohms  
Fig. 7. Dependence of tfi and EOFF on IC.  
Fig. 8. Dependence of tfi and EOFF on RG.  
15  
12  
9
100  
10  
1
IC = 32A  
VCE = 300V  
TJ = 125°C  
RG = 4.7Ω  
dV/dt < 5V/ns  
6
3
0
0.1  
0
25  
50  
75  
100  
125  
150  
0
100  
200  
300  
400  
500  
600  
Qg - nanocoulombs  
VCE - Volts  
Fig. 9. Gate Charge  
Fig.10.Turn-offSafeOperatingArea  
1
0.1  
D=0.5  
D=0.2  
D=0.1  
D=0.05  
D=0.02  
D=0.01  
D = Duty Cycle  
0.01  
0.001  
Single pulse  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
Fig. 11. TransientThermalResistance  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715 6,306,728B1  
5,381,025  
IXGH32N60BU1  
Fig.12MaximumForwardVoltageDrop  
Fig.13 Peak Forward Voltage VFR and  
ForwardRecoveryTimetFR  
100  
80  
60  
40  
20  
0
25  
20  
15  
10  
5
1000  
800  
600  
400  
200  
0
TJ = 125°C  
IF = 37A  
TJ = 150°C  
TJ = 100°C  
TJ = 25°C  
VFR  
tfr  
0
0.5  
1.0  
1.5  
2.0  
2.5  
0
100  
200  
300  
400  
500  
600  
Voltage Drop - Volts  
diF /dt - A/µs  
Fig.14 JunctionTemperatureDependence  
off IRM and Qr  
Fig.15 ReverseRecoveryChargee  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
4
3
2
1
0
TJ = 100°C  
VR = 350V  
IF = 30A  
max.  
IRM  
typ.  
IF = 60A  
Qr  
IF = 30A  
IF = 15A  
0
40  
80  
120  
160  
1
10  
100  
diF /dt - A/µs  
1000  
TJ - Degrees C  
Fig.16 PeakReverseRecoveryCurrent  
Fig.17 ReverseRecoveryTime  
40  
30  
20  
10  
0
0.8  
0.6  
0.4  
0.2  
0.0  
IF = 30A  
max.  
TJ = 100°C  
IF = 30A  
TJ = 100°C  
VR = 350V  
VR = 350V  
max.  
typ.  
IF = 60A  
typ.  
IF = 60A  
IF = 30A  
IF = 15A  
IF = 30A  
IF = 15A  
200  
400  
600  
0
200  
400  
600  
diF /dt - A/µs  
diF /dt - A/µs  
© 2003 IXYS All rights reserved  
IXGH32N60BU1  
Fig.18DiodeTransientThermalresistancejunctiontocase  
1.00  
0.10  
0.01  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715 6,306,728B1  
5,381,025  
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