®
TANCERAM
CHIP
CAPACITORS
TANCERAM® chip capacitors can replace tantalum capacitors
in many applications and offer several key advantages over
traditional tantalums. Because Tanceram® capacitors exhibit
extremely low ESR, equivalent circuit performance can often
be achieved using considerably lower capacitance values.
Low DC leakage reduces current drain, extending the battery
life of portable products. Tancerams® high DC breakdown
voltage ratings offer improved reliability and eliminate large
voltage de-rating common when designing with tantalums.
A
DVANTAGES
• Low ESR
• Low DC Leakage
• Higher Surge Voltage
• Reduced CHIP Size
• Non-polarized Devices
• Improved Reliability
• Higher Insulation Resistance • Higher Ripple Current
A
PPLICATIONS
• Switching Power Supply Smoothing (Input/Output)
• Backlighting Inverters
• DC/DC Converter Smoothing (Input/Output)
• General Digital Circuits
Typical ESR Comparison
Typical Breakdown Voltage Comparison
10
100%
1.0 μF / 16V
Tantalum
75%
1.0 μF / 16V Tantalum
1
50%
1.0 μF / 16V TANCERAM ®
1.0 μF / 16V TANCERAM ®
0.1
25%
0%
0.01
0.001
0
100
200
300
400
500
0.01
0.1
1
10
100
DC Breakdown Voltage
Frequency (MHz)
HOW TO
O
RDER TANCERAM®
Part number written: 100R15X106MV4E
100
R15
X
106
M
V
4
E
VOLTAGE
SIZE
DIELECTRIC
CAPACITANCE
TOLERANCE
TERMINATION
MARKING
PACKING
Code
Type Reel
Plastic 7”
Paper 7”
6R3 = 6.3 V
100 = 10 V
160 = 16 V
250 = 25 V
500 = 50 V
101 = 100 V
See Chart
W = X7R
X = X5R
1st two digits are
significant; third digit
denotes number of
zeros.
K = 10ꢀ
M = 20ꢀ
V = Nickel Barrier
with 100ꢀ Tin
Plating (Matte)
4 = Unmarked
E
T
Tape specifications
conform to EIA RS481
T = SnPb*
(*available on
select parts)
105 = 1.00 µF
476 = 4.70 µF
107 = 10.0 µF
18
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