NPN SILICON PLANAR MEDIUM POWER
ZTX656
ZTX657
HIGH VOLTAGE TRANSISTORS
ISSUE 2 JULY 94
FEATURES
*
*
*
300 Volt VCEO
0.5 Amp continuous current
Ptot=1 Watt
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
ZTX656
200
ZTX657
300
UNIT
Collector-Base Voltage
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
200
300
5
1
V
Peak Pulse Current
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
IC
0.5
1
A
Ptot
W
°C
Operating and Storage Temperature
Range
Tj:Tstg
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
ZTX656
ZTX657
PARAMETER
SYMBOL
V(BR)CBO
UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
200
200
5
300
300
5
V
V
V
IC=100µA, IE=0
IC=10mA, IB=0*
IE=100µA, IC=0
VCB=160V, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO
V(BR)EBO
ICBO
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
100
100
0.5
1
nA
nA
100
100
VCB=200V, IE=0
Emitter Cut-Off
Current
IEBO
nA
VEB=3V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
VBE(sat)
VBE(on)
hFE
0.5
1
V
IC=100mA, IB=10mA*
IC=100mA, IB=10mA*
IC=100mA, VCE=5V*
Base-Emitter
Saturation Voltage
V
Base-Emitter
Turn-On Voltage
1
1
V
Static Forward
Current Transfer
Ratio
50
40
50
40
IC=100mA, VCE=5V
IC=10mA, VCE=5V
Transition
Frequency
fT
30
30
MHz IC=10mA, VCE=20V
f=20MHz
3-227
