IXGH 28N60BD1
IXGT 28N60BD1
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD (IXGH) Outline
IC = IC90; VCE = 10 V,
9
14
S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Cies
Coes
Cres
1500
170
40
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
80
15
30
100 nC
30 nC
40 nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
td(on)
tri
td(off)
tfi
Inductive load, TJ = 25°C
15
25
ns
ns
Dim. Millimeter
Inches
Min. Max. Min. Max.
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 10 W
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
200
200
3
400 ns
400 ns
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
Eoff
6
mJ
E
F
4.32 5.49 0.170 0.216
5.4
6.2 0.212 0.244
td(on)
tri
15
25
1
ns
ns
Inductive load, TJ = 125°C
G
H
1.65 2.13 0.065 0.084
-
4.5
-
0.177
IC = IC90, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = Roff = 10 W
Eon
td(off)
tfi
mJ
ns
J
1.0
1.4 0.040 0.055
K
10.8 11.0 0.426 0.433
400
400
6
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
ns
N
1.5 2.49 0.087 0.102
Eoff
mJ
RthJC
RthCK
0.83 K/W
K/W
TO-268AA (D3 PAK)
TO-247
0.25
Reverse Diode (FRED)
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
VF
TestConditions
IF = IC90, VGE = 0 V,
TJ = 150°C
1.6
2.5
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 % TJ = 25°C
IRM
trr
IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms
VR = 100 V
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V
6
A
ns
ns
TJ = 100°C 100
TJ = 25°C 25
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
RthJC
1 K/W
A
A1
A2
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
Min. Recommended Footprint
b
b2
C
1.15
1.9
.4
1.45
2.1
.65
.045 .057
.75
.83
.016 .026
D
E
E1
13.80 14.00
15.85 16.05
.543 .551
.624 .632
.524 .535
13.3
5.45 BSC
18.70 19.10
13.6
e
H
L
.215 BSC
.736 .752
.094 .106
2.40
2.70
L1
L2
L3
L4
1.20
1.00
0.25 BSC
1.40
1.15
.047 .055
.039 .045
.010 BSC
3.80
4.10
.150 .161
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
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