IXGH 32N60BD1
IXGT 32N60BD1
TO-247AD(IXGH)Outline
Symbol
gfs
TestConditions
Characteristic Values
(T = 25°C, unless otherwise specified)
J
min. typ. max.
I
= I ; V = 10 V,
25
S
C
C90
CE
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
Cres
2700
240
50
pF
pF
pF
V
= 25 V, V = 0 V, f = 1 MHz
CE
GE
Qg
110
22
nC
nC
nC
Qge
Qgc
I
= I , V = 15 V, V = 0.5 V
CES
C
C90
GE
CE
Dim. Millimeter
Inches
40
Min. Max. Min. Max.
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
Inductive load, TJ = 25°C
= I , V = 15 V, L = 100 µH,
td(on)
tri
td(off)
tfi
25
20
ns
ns
I
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
C
C90
GE
V
= 0.8 V , R = R = 4.7 Ω
CE
CES
G
off
100
80
200 ns
150 ns
1.2 mJ
E
4.32 5.49 0.170 0.216
6.2 0.212 0.244
Remarks:Switchingtimesmayincreasefor
(Clamp) > 0.8 V , higher T or
increasedR
F5.4
V
CE
CES
J
G
H
1.65 2.13 0.065 0.084
Eoff
0.6
G
-
4.5
-
0.177
J
1.0
1.4 0.040 0.055
td(on)
tri
25
25
ns
ns
Inductive load, TJ = 125°C
= I , V = 15 V, L = 100 µH
K
10.8 11.0 0.426 0.433
I
L
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
C
C90
GE
M
Eon
td(off)
tfi
1
mJ
ns
V
= 0.8 V , R = R = 4.7 Ω
CE
CES
G
off
N
1.5 2.49 0.087 0.102
120
120
1.2
Remarks:Switchingtimesmayincreasefor
(Clamp) > 0.8 V , higher T or
increasedR
TO-268AA (D3 PAK)
V
ns
CE
CES
J
G
Eoff
mJ
RthJC
RthCK
0.62 K/W
K/W
TO-247
0.25
ReverseDiode(FRED)
Characteristic Values
(T = 25°C, unless otherwise specified)
J
Symbol
VF
TestConditions
I = I , V = 0 V,
min. typ. max.
T = 150°C
1.6
2.5
V
V
F
C90
GE
J
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % T = 25°C
J
IRM
trr
I = I , V = 0 V, -di /dt = 100 A/µs
V = 360 V
6
A
ns
ns
F
C90
GE
F
Dim.
Millimeter
Min. Max.
Inches
T = 125°C 100
R
J
Min. Max.
I = 1 A; -di/dt = 100 A/µs; V = 30 V
T = 25°C
25
F
R
J
A
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
A1
A2
RthJC
1.0 K/W
b
1.15
1.9
.4
1.45
2.1
.045 .057
b2
C
.75
.83
.65
.016 .026
D
E
13.80 14.00
15.85 16.05
13.3 13.6
5.45 BSC
18.70 19.10
.543 .551
.624 .632
.524 .535
E1
e
.215 BSC
.736 .752
.094 .106
H
L
2.40
2.70
L1
L2
L3
L4
1.20
1.00
1.40
1.15
.047 .055
.039 .045
.010 BSC
0.25 BSC
3.80 4.10
.150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
