ZXMP6A13G
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)
PARAMETER
S YMBOL MIN. TYP. MAX. UNIT CONDITIONS
S TATIC
Dra in -S o u rce Bre a kd o w n Vo lta g e
Ze ro Ga te Vo lta g e Dra in Cu rre n t
Ga te -Bo d y Le a ka g e
V(BR)DS S
IDS S
-60
V
ID=-250µA, VGS =0V
VDS =-60V, VGS =0V
VGS =Ϯ20V, VDS =0V
ID=-250A, VDS = VGS
VGS =-10V, ID=-0.9A
-1
A
n A
V
IGS S
100
Ga te -S o u rce Th re s h o ld Vo lta g e
Static Drain-Source On-State Resistance
VGS (th )
RDS (o n )
-1.0
(1)
0.390
0.595
⍀
⍀
VGS =-4.5V, ID=-0.8A
(1)(3)
Fo rw a rd Tra n s co n d u cta n ce
g fs
1.8
S
VDS =-15V,ID=-0.9A
(3)
DYNAMIC
In p u t Ca p a cita n ce
Cis s
Co s s
Crs s
233
17.4
9.6
p F
p F
p F
VDS =-30V, VGS =0V,
Ou tp u t Ca p a cita n ce
f=1MHz
Re ve rs e Tra n s fe r Ca p a cita n ce
(2) (3)
S WITCHING
Tu rn -On De la y Tim e
Ris e Tim e
td (o n )
tr
td (o ff)
tf
1.6
2.3
13
n s
n s
n s
n s
n C
VDD =-30V, ID=-1A
RG 6.0⍀, VGS =-10V
Tu rn -Off De la y Tim e
Fa ll Tim e
5.8
2.4
Ga te Ch a rg e
Qg
VDS =-30V,VGS =-5V,
ID=-0.9A
To ta l Ga te Ch a rg e
Qg
5.1
0.7
0.7
n C
n C
n C
VDS =-30V,VGS =-10V,
ID=-0.9A
Ga te -S o u rce Ch a rg e
Ga te -Dra in Ch a rg e
S OURCE-DRAIN DIODE
Qg s
Qg d
(1)
Dio d e Fo rw a rd Vo lta g e
VS D
-0.85 -0.95
V
TJ =25ЊC, IS =-0.8A,
VGS =0V
(3)
Re ve rs e Re co ve ry Tim e
trr
22.6
23.2
n s
TJ =25ЊC, IF=-0.9A,
d i/d t= 100A/s
(3)
Re ve rs e Re co ve ry Ch a rg e
Qrr
n C
NOTES:
(1) Measured under pulsed conditions. Width Յ300µ s. Duty cycle Յ 2% .
(2) Switching characteristics are independent of operating junction tem perature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - J ULY 2004
4
