IXGH 30N60BD1
IXGT 30N60BD1
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD (IXGH) Outline
IC = IC90; VCE = 10 V,
25
S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Cies
Coes
Cres
2700
240
50
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
110
22
nC
nC
nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
40
td(on)
tri
td(off)
tfi
25
30
ns
ns
Inductive load, TJ = 25°C
Dim. Millimeter
Inches
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 4.7 W
Min. Max. Min. Max.
130
100
1.0
220 ns
190 ns
2.0 mJ
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
,
Eoff
E
F
4.32 5.49 0.170 0.216
td(on)
tri
25
35
ns
ns
mJ
ns
5.4
6.2 0.212 0.244
Inductive load, TJ = 150°C
G
H
1.65 2.13 0.065 0.084
IC = IC90, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = Roff = 4.7 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
-
4.5
-
0.177
Eon
td(off)
tfi
1.0
200
230
J
1.0
1.4 0.040 0.055
K
10.8 11.0 0.426 0.433
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
ns
,
Eoff
2.5
mJ
N
1.5 2.49 0.087 0.102
RthJC
RthCK
0.62 K/W
K/W
TO-268AA (D3 PAK)
(TO-247 AD)
0.25
Reverse Diode (FRED)
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
Symbol
VF
TestConditions
IF = IC90, VGE = 0 V, Pulse test
min. typ. max.
TJ = 150°C
1.6
2.5
V
V
t
£ 300 ms, duty cycle d £ 2 %
IRM
trr
IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms
VR = 100 V
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V
6
100
25
A
ns
ns
TJ =100°C
RthJC
0.9 K/W
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
Min. Recommended Footprint
A
A1
A2
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
b
b2
C
1.15
1.9
.4
1.45
2.1
.65
.045 .057
.75
.83
.016 .026
D
E
E1
13.80 14.00
15.85 16.05
.543 .551
.624 .632
.524 .535
13.3
5.45 BSC
18.70 19.10
13.6
e
H
L
.215 BSC
.736 .752
.094 .106
2.40
2.70
L1
L2
L3
L4
1.20
1.00
0.25 BSC
1.40
1.15
.047 .055
.039 .045
.010 BSC
3.80
4.10
.150 .161
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
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