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IXGQ28N120B

型号：

IXGQ28N120B

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

506 K

下载PDF手册
High Voltage IGBT with Diode  
VCES  
IC25  
= 1200 V  
= 50 A  
IXGQ 28N120B  
IXGQ 28N120BD1  
VCE(sat) = 3.5 V  
tfi(typ)  
= 160 ns  
D1  
TO-3P(IXGQ)  
Symbol  
TestConditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
1200  
1200  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
G
C
E
(TAB)  
IC25  
IC110  
ICM  
TC = 25°C  
50  
28  
A
A
A
TC = 110°C  
G = Gate  
E = Emitter  
C = Collector  
TC = 25°C, 1 ms  
150  
TAB = Collector  
SSOA  
(RBSOA)  
VGE = 15 V, TJ = 125°C, RG = 10 Ω  
Clamped inductive load  
ICM = 60  
@0.8 VCES  
A
PC  
TC = 25°C  
250  
W
Features  
z International standard package  
z IGBT and anti-parallel FRED for  
resonant power supplies  
- Induction heating  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
- Rice cookers  
Md  
Mounting torque  
1.13/10 Nm/lb.in.  
z MOS Gate turn-on  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
- drive simplicity  
z Fast Recovery Expitaxial Diode (FRED)  
- soft recovery with low IRM  
Weight  
6
g
Advantages  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
z Saves space (two devices in one  
package)  
Easy to mount with 1 screw  
z
(isolated mounting screw hole)  
Reduces assembly time and cost  
VGE(th)  
ICES  
IC = 250 µA, VCE = VGE  
2.5  
5.0  
V
z
VCE = VCES  
VGE = 0 V  
TJ = 25°C  
28N120B  
28N120BD1  
25 µA  
50 µA  
IGES  
VCE = 0 V, VGE = 20 V  
100 nA  
VCE(sat)  
IC  
= 28A, VGE = 15 V  
2.9  
2.8  
3.5  
V
Note 2  
T=125°C  
© 2003 IXYS All rights reserved  
DS99135(12/03)  
IXGQ 28N120B  
IXGQ 28N120BD1  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-3P (IXTQ) Outline  
gfs  
IC = 28A; VCE = 10 V,  
Note 2  
20  
30  
S
Cies  
2700  
170  
pF  
pF  
28N120B  
Coes  
Cres  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
28N120BD1 180  
60  
pF  
pF  
Qg  
92  
17  
37  
nC  
nC  
nC  
Qge  
Qgc  
IC = 28A, VGE = 15 V, VCE = 0.5 VCES  
td(on)  
tri  
30  
20  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 28 A; VGE = 15 V  
td(off)  
180  
280 ns  
VCE = 0.8 VCES; RG = Roff = 5 Ω  
tf i  
Eoff  
160  
2.0  
320 ns  
5.0 mJ  
Note 1.  
td(on)  
tri  
35  
28  
ns  
ns  
Inductive load, TJ = 125°C  
IC = 28A; VGE = 15 V  
Eon  
td(off)  
2.5  
250  
mJ  
ns  
VCE = 0.8 VCES; RG = Roff = 5 Ω  
Note 1  
tf i  
Eoff  
300  
8.0  
ns  
mJ  
RthJC  
RthCK  
0.5 K/W  
K/W  
0.25  
ReverseDiode(FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
IF  
TestConditions  
TC = 90°C  
10  
A
VF  
IF = 10 A, VGE = 0 V  
IF = 10 A, VGE = 0 V, TJ = 125°C  
2.95  
2.0  
V
V
IRM  
trr  
IF = 10 A; -diF/dt = 400 A/µs, VR = 600 V  
VGE = 0 V; TJ = 125°C  
14  
120  
A
ns  
trr  
IF = 1 A; -diF/dt = 100 A/µs; VR = 30 V, VGE = 0 V  
40  
ns  
RthJC  
2.5 K/W  
Notes: 1.  
2.  
Switching times may increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG.  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
,
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,850,072  
4,835,592  
4,931,844  
4,881,106  
5,034,796  
5,017,508  
5,063,307  
5,049,961  
5,237,481  
5,187,117  
5,381,025  
5,486,715  
6,404,065B1 6,162,665  
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344  
6,534,343  
6,583,505  
IXGQ28N120B  
IXGQ 28N120BD1  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
270  
240  
210  
180  
150  
120  
90  
56  
49  
42  
35  
28  
21  
14  
7
VGE = 15V  
13V  
11V  
VGE = 17V  
15V  
13V  
9V  
7V  
11V  
9V  
60  
30  
7V  
5V  
0
0
0.5  
0.5  
6
1
1.5  
2
2.5  
3
3.5  
4
0
2
4
6
8
VC E - Volts  
10 12 14 16 18 20  
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
56  
49  
42  
35  
28  
21  
14  
7
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
VGE = 15V  
13V  
11V  
VGE = 15V  
IC = 56A  
9V  
7V  
IC = 28A  
IC = 14A  
5V  
0
1
1.5  
2 2.5  
VCE - Volts  
3
3.5  
4
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
7
6
5
4
3
2
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = 25ºC  
IC = 56A  
28A  
14A  
TJ = 125ºC  
25ºC  
-40ºC  
7
8
9
10 11 12 13 14 15 16 17  
VG E - Volts  
4
5
6
7
VG E - Volts  
8
9
10  
© 2003 IXYS All rights reserved  
IXGQ28N120B  
IXGQ 28N120BD1  
Fig. 8. Dependence of Turn-off  
Energy Loss on RG  
Fig. 7. Transconductance  
35  
22  
20  
18  
16  
14  
12  
10  
8
IC = 56A  
30 TJ = -40ºC  
25ºC  
125ºC  
TJ = 125ºC  
VGE = 15V  
VCE = 960V  
25  
20  
15  
10  
5
IC = 28A  
IC = 14A  
6
4
0
2
0
10 20 30 40 50 60 70 80 90 100  
0
10 20 30 40 50 60 70 80 90 100  
R G - Ohms  
I C - Amperes  
Fig. 9. Dependence of Turn-Off  
Energy Loss on IC  
Fig. 10. Dependence of Turn-off  
Energy Loss on Temperature  
20  
18  
16  
14  
12  
10  
8
20  
18  
16  
14  
12  
10  
8
RG = 5Ω  
RG = 47Ω - - - -  
VGE = 15V  
RG = 5Ω  
RG = 47Ω - - - -  
VGE = 15V  
VCE = 960V  
VCE = 960V  
IC = 56A  
IC = 28A  
TJ = 125ºC  
6
6
4
4
2
2
TJ = 25ºC  
IC = 14A  
0
0
10 15 20 25 30 35 40 45 50 55 60  
I C - Amperes  
25 35 45 55 65 75 85 95 105 115 125  
TJ - Degrees Centigrade  
Fig. 11. Dependence of Turn-off  
Switching Time on RG  
Fig. 12. Dependence of Turn-off  
Switching Time on IC  
1400  
1200  
1000  
800  
700  
600  
500  
400  
300  
200  
100  
0
td(off)  
tfi  
RG = 5Ω  
td(off)  
- - - - - -  
tfi  
- - - - - -  
TJ = 125ºC  
GE = 15V  
VCE = 960V  
VGE = 15V  
VCE = 960V  
V
TJ = 125ºC  
IC = 56A  
600  
IC = 28A  
IC = 14A  
TJ = 25ºC  
400  
200  
0
10 20 30 40 50 60 70 80 90 100  
R G - Ohms  
10 15 20 25 30 35 40 45 50 55 60  
I C - Amperes  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,850,072  
4,835,592  
4,931,844  
4,881,106  
5,034,796  
5,017,508  
5,063,307  
5,049,961  
5,237,481  
5,187,117  
5,381,025  
5,486,715  
6,404,065B1 6,162,665  
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344  
6,534,343  
6,583,505  
IXGQ 28N120B  
IXGQ28N120BD1  
Fig. 13. Dependence of Turn-off  
Switching Time on Temperature  
Fig. 14. Gate Charge  
550  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
15  
12  
9
td(off)  
VCE = 600V  
IC = 28A  
IG = 10mA  
tfi  
- - - - - -  
RG = 5Ω  
GE = 15V  
VCE = 960V  
IC = 14A  
V
IC = 56A  
6
IC = 28A  
IC = 14A  
3
0
25 35 45 55 65 75 85 95 105 115 125  
TJ - Degrees Centigrade  
0
10 20 30 40 50 60 70 80 90 100  
Q G - nanoCoulombs  
Fig. 15. Capacitance  
10000  
1000  
100  
f = 1 MHz  
C
ies  
C
oes  
C
res  
10  
0
5
10  
15  
20  
VC E - Volts  
25  
30  
35  
40  
Fig. 16. Maximum Transient Thermal Resistance  
1.00  
0.50  
0.10  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2003 IXYS All rights reserved  
IXGQ 28N120B  
IXGQ28N120BD1  
30  
A
2000  
40  
A
TVJ= 100°C  
VR = 600V  
TVJ= 100°C  
VR = 600V  
nC  
25  
1500  
Qr  
30  
IF  
IRM  
IF= 20A  
IF= 10A  
IF= 5A  
20  
15  
10  
5
TVJ=150°C  
TVJ=100°C  
IF= 20A  
IF= 10A  
IF= 5A  
1000  
500  
0
20  
10  
0
TVJ= 25°C  
0
A/µs  
-diF/dt  
0
1
2
3
VF  
4 V  
100  
1000  
0
200 400 600 1000  
A/µs  
-diF/dt  
Fig. 17 Forward current IF versus VF  
2.0  
Fig. 18 Reverse recovery charge Qr  
versus -diF/dt  
Fig. 19 Peak reverse current IRM  
versus -diF/dt  
150  
120  
1.2  
µs  
TVJ= 100°C  
VR = 600V  
TVJ= 100°C  
ns  
IF = 10A  
V
140  
VFR  
tfr  
trr  
tfr  
1.5  
Kf  
VFR  
130  
80  
40  
0
0.8  
IF= 20A  
IF= 10A  
1.0  
120  
IRM  
IF= 5A  
110  
0.4  
0.5  
Qr  
100  
90  
0.0  
0.
A/µs  
0
40  
80  
120  
160  
0
200 400 600 1000  
0
200 400 600 1000  
°C  
A/µs  
diF/dt  
TVJ  
-diF/dt  
Fig. 20 Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 21 Recovery time trr versus -diF/dt  
Fig. 22 Peak forward voltage VFR and  
tfr  
versus diF/dt  
10  
Constants for ZthJC calculation:  
K/W  
i
Rthi (K/W)  
ti (s)  
1
1
2
3
1.449  
0.558  
0.493  
0.0052  
0.0003  
0.017  
ZthJC  
0.1  
0.01  
DSEP 8-12A  
0.001  
0.00001  
s
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 23 Transient thermal resistance junction to case  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,850,072  
4,835,592  
4,931,844  
4,881,106  
5,034,796  
5,017,508  
5,063,307  
5,049,961  
5,237,481  
5,187,117  
5,381,025  
5,486,715  
6,404,065B1 6,162,665  
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344  
6,534,343  
6,583,505  
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