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IXFN80N60P3

型号：

IXFN80N60P3

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

129 K

下载PDF手册
Advance Technical Information  
Polar3TM HiPerFETTM  
Power MOSFET  
VDSS = 600V  
ID25 = 66A  
RDS(on) ≤ 70mΩ  
IXFN80N60P3  
trr  
≤ 250ns  
N-Channel Enhancement Mode  
Fast Intrinsic Rectifier  
miniBLOC  
E153432  
S
G
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
S
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
600  
600  
V
V
D
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
G = Gate  
S = Source  
D = Drain  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
66  
A
A
Either Source Terminal S can be used as  
the Source Terminal or the Kelvin Source  
(Gate Return) Terminal.  
200  
IA  
EAS  
TC = 25°C  
TC = 25°C  
40  
2
A
J
Features  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
35  
V/ns  
W
z
International Standard Package  
Low Intrinsic Gate Resistance  
miniBLOC with Aluminum Nitride  
Isolation  
960  
z
z
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
z Dynamic dv/dt Rating  
z Avalanche Rated  
z Fast Intrinsic Rectifier  
z Low QG  
z Low RDS(on)  
z Low Drain-to-Tab Capacitance  
z Low Package Inductance  
VISOL  
50/60 Hz, RMS, t = 1minute  
2500  
3000  
V~  
V~  
IISOL ≤ 1mA,  
t = 1s  
Md  
Mounting Torque for Base Plate  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
Weight  
30  
g
Advantages  
z
High Power Density  
Easy to Mount  
Space Savings  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
600  
3.0  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 8mA  
VGS = ±30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
z DC-DC Converters  
z Battery Chargers  
5.0  
z Switch-Mode and Resonant-Mode  
Power Supplies  
±200 nA  
IDSS  
50 μA  
4 mA  
z Uninterrupted Power Supplies  
z AC Motor Drives  
TJ = 125°C  
z High Speed Power Switching  
Applications  
RDS(on)  
VGS = 10V, ID = 40A, Note 1  
70 mΩ  
DS100356(07/11)  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXFN80N60P3  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B (IXFN) Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 40A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate Input Resistance  
55  
90  
S
Ciss  
Coss  
Crss  
13.1  
1240  
5.0  
nF  
pF  
pF  
RGi  
1.0  
Ω
td(on)  
tr  
td(off)  
tf  
48  
25  
87  
8
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 40A  
RG = 1Ω (External)  
(M4 screws (4x) supplied)  
Qg(on)  
Qgs  
190  
56  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 40A  
Qgd  
48  
RthJC  
RthCS  
0.13 °C/W  
°C/W  
0.05  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
80  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS , VGS = 0V, Note 1  
320  
1.5  
trr  
250  
ns  
μC  
A
IF = 40A, -di/dt = 100A/μs  
QRM  
IRM  
1.4  
VR = 100V, VGS = 0V  
13.0  
Note  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463 6,771,478 B2 7,071,537  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
IXFN80N60P3  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
180  
160  
140  
120  
100  
80  
VGS = 10V  
7V  
VGS = 10V  
8V  
7V  
6V  
60  
6V  
5V  
40  
20  
5V  
0
0
5
10  
15  
20  
25  
30  
0
0
0
1
2
3
4
5
6
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 40A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
7V  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 10V  
6V  
I D = 80A  
I D = 40A  
5V  
4V  
2
4
6
8
10  
12  
14  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 40A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
70  
60  
50  
40  
30  
20  
10  
0
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
20  
40  
60  
80  
100  
120  
140  
160  
180  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXFN80N60P3  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
120  
100  
80  
60  
40  
20  
0
160  
140  
120  
100  
80  
TJ = - 40ºC  
TJ = 125ºC  
25ºC  
25ºC  
- 40ºC  
125ºC  
60  
40  
20  
0
0
20  
40  
60  
80  
100  
120  
3.0  
0.3  
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
1.3  
40  
ID - Amperes  
VGS - Volts  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
240  
200  
160  
120  
80  
VDS = 300V  
I D = 40A  
I G = 10mA  
TJ = 125ºC  
TJ = 25ºC  
40  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
1000  
100,000  
10,000  
1,000  
100  
= 1 MHz  
f
C
iss  
RDS(on) Limit  
100  
10  
1
100µs  
C
oss  
TJ = 150ºC  
C = 25ºC  
Single Pulse  
10  
C
rss  
T
1ms  
1
10  
100  
1,000  
5
10  
15  
20  
25  
30  
35  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFN80N60P3  
Fig. 13. Maximum Transient Thermal Impedance  
AAAAA  
0.2  
0.1  
0.01  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_80N60P3(W9) 3-10-11  
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