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3SK230-U1B

型号:

3SK230-U1B

品牌:

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数:

9 页

PDF大小:

250 K

To our customers,  
Old Company Name in Catalogs and Other Documents  
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology  
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Renesas Electronics document. We appreciate your understanding.  
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April 1st, 2010  
Renesas Electronics Corporation  
Issued by: Renesas Electronics Corporation (http://www.renesas.com)  
Send any inquiries to http://www.renesas.com/inquiry.  
Notice  
1.  
2.  
All information included in this document is current as of the date this document is issued. Such information, however, is  
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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
3SK230  
RF AMP. FOR VHF/CATV TUNER  
N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR  
4 PINS MINI MOLD  
FEATURES  
PACKAGE DIMENSONS  
The Characteristic of Cross-Modulation is good.  
(Unit: mm)  
CM = 108 dBµ (TYP.) @f = 470 MHz, G = 30 dB  
R
0.2  
Low Noise Figure  
NF1 = 2.2 dB TYP. (@ = 470 MHz)  
NF2 = 0.9 dB TYP. (@ = 55 MHz)  
2.8  
.5  
+0.2  
–0.1  
High Power Gain  
GPS = 19.5 dB TYP. (@ = 470 MHz)  
Enhancement Typ.  
Suitable for use as RF amplifier in CATV tuner.  
Automatically Mounting: Embossed Type Taping  
Small Package: 4 Pins Mini Mold Package. (SC-61)  
5
5
ABSOLUTE MAXIMUM RATINGS (T  
A
= 25 °C)  
Drain to Source Voltage  
Gate1 to Source Voltage  
Gate2 to Source Voltage  
Gate1 to Drain Voltage  
Gate2 to Drain Voltage  
Drain Current  
V
V
V
V
V
DSX  
G1S  
G2S  
G1D  
G2D  
18  
V
±8(±10)*1  
±8(±10)*1  
18  
V
V
18  
V
5
5
I
D
25  
mA  
mW  
°C  
°C  
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
P
D
200  
PIN CONNECTIONS  
1. Source  
2. Drain  
3. Gate 2  
4. Gate 1  
Tch  
125  
Ts
55 to +125  
RL 10 kΩ  
PRECAUTION: Avoid hc voltages or electric fields so that this device would not suffer from any damage due  
to hose voltages or fields.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PU10029EJ01V0DS (1st edition)  
The mark  shows major revised points.  
(Previous No. P10587EJ3V0DS00)  
Date Published October 2001 CP(K)  
Printed in Japan  
NEC Corporation 1993  
NEC Compound Semiconductor Devices 2001  
3SK230  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
CHARACTERISTIC  
SYMBOL  
BVDSX  
MIN.  
18  
TYP.  
MAX.  
UNIT  
V
TEST CONDITIONS  
Drain to Source Breakdown  
Voltage  
VG1S = VG2S = 2 V, ID = 10 µA  
Drain Current  
IDSX  
VG1S(off)  
VG2S(off)  
IG1SS  
0.01  
0
8.0  
+1.0  
+1.6  
±20  
±20  
24  
mA  
V
VDS = 6 V, VG2S = 4.5 V, VG1S = 0.75 V  
VDS = 6 V, VG2S = 3 V, ID = 10 µA  
VDS = 6 V, VG1S = 3 V, ID = 10 µA  
VDS = VG2S = 0, VG1S = ±8 V  
Gate1 to Source Cutoff Voltage  
Gate2 to Source Cutoff Voltage  
Gate1 Reverse Current  
Gate2 Reverse Current  
Forward Transfer Admittance  
+0.6  
+1.1  
20  
V
nA  
nA  
mS  
IG2SS  
VDS = VG1S = 0, VG2S = ±8 V  
| yfs |  
16  
VDS = 6 V, VG2S = 4.5 , ID = 0 mA  
f = 1 kHz  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Power Gain  
Ciss  
Coss  
Crss  
Gps  
2.3  
0.9  
2.8  
1.2  
3.3  
1.5  
pF  
pF  
pF  
dB  
VDS = 6 V, 5 V, ID = 10 mA  
f = 1 MHz  
0.015  
19.5  
2.2  
0.03  
22.5  
3.2  
16.5  
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA  
f 470 MHz  
Noise Figure 1  
NF1  
NF2  
Noise Figure 2  
0.9  
2.4  
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA  
f = 55 MHz  

IDSX Classification  
Rank  
U1A/UAA *  
U1A  
U1B/UAB *  
Marking  
IDSX (mA)  
U1B  
0.01 to 3.0  
1.0 to 8.0  
* Old Specification / New Specification  
2
Data Sheet PU10029EJ01V0DS  
3SK230  
CHARACTERISTIC CURVE (TA = 25 °C)  
TOTAL POWER DISSIPATION vs.  
AMBIENT TEMPERATURE  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
Free Air  
V
G2S = 4.5 V  
50  
40  
30  
20  
10  
400  
300  
200  
100  
V
G1S = 3 V  
2.5 V  
2.0 V  
5 V  
.0 V  
0.5 V  
0
5
10  
V
DS - Drain to Source ltage V  
0
25  
50  
75  
100  
125  
T
A
- Ambient Temperature - C  
DRAIN CURRENT vs.  
GATE1 TO SOURCE VOLTAGE  
FARTRANSFER ADMITTANCE vs.  
TO SURCE VOLTAGE  
= 6 V  
VDS = 6 V  
25  
20  
15  
10  
25  
f = kHz  
V
G2S = 5 V  
0  
10  
4 V  
3 V  
2.0 V  
1.5 V  
5
0
5
0
2 V  
–1  
0
1
2
3
4
–1  
0
1
2
3
4
VGIS - Gate 1 to Source Voltage V  
VGIS - Gate1 to Source Voltage - V  
FORWARD TRANSFER ADMITANCE vs.  
DRAIN CURRENT  
INPUT CAPACITANCE vs.  
GATE2 TO SOURCE VOLTAGE  
5.0  
4.0  
3.0  
2.0  
1.0  
I
D
= 10 mA  
(at VDS = 6 V  
G2S = 4.5 V)  
f = 1 MH  
V
DS = 6 V  
40  
32  
24  
16  
f = 1 kHz  
V
Z
V
G2S = 6 V  
5 V  
4 V  
2 V  
3 V  
4
8
12  
16  
20  
I
D
- Drain Current - mA  
0
1.0  
2.0  
3.0  
4.0  
5.0  
V
G2S - Gate2 to Source Voltage - V  
3
Data Sheet PU10029EJ01V0DS  
3SK230  
OUTPUT CAPACITANCE vs.  
POWER GAIN AND NOISE FIGURE vs.  
GATE2 TO SOURCE VOLTAGE  
GATE2 TO SOURCE VOLTAGE  
10  
2.5  
2.0  
1.5  
1.0  
0.5  
I
D
= 10 mA  
(at VDS = 6 V  
G2S = 4.5 V)  
f = 1 MH  
f = 470 MHz  
G
ps  
ID = 10 mA  
2.0  
1.0  
0
V
(at VDS = 6 V  
Z
V
G2S = 4.5 V)  
5
–1.0  
NF  
–2.0  
0
0
0
1.0  
2.0  
3.0  
4.0  
5.0  
1.0  
2.0  
3.0  
4.0  
5.0  
VG2S - Gate2 to Source Voltage - V  
VG2S - Gate2 to Source Voltage - V  
S-PARAMETER  
oduct  
V
DS = 6 V, VG2S = 4.5 V, I  
D
= 10 mA, (Zo = 50 )  
FREQUENC  
Y
S11  
S21  
S12  
S22  
MHz  
100  
200  
300  
400  
500  
600  
MAG  
1.000  
0.960  
0.926  
0.876  
0.853  
0.842  
ANG  
14.7  
24.5  
34.3  
45.0  
54.4  
63.1  
MAG  
ANG  
160.5  
148.3  
135.8  
121.2  
MAG  
0.008  
0.003  
0.005  
0.003  
ANG  
MAG  
0.942  
0.947  
0.906  
0.908  
0.915  
0.889  
ANG  
2.160  
1.953  
1.868  
1.760  
1.691  
1.608  
12.8  
81.1  
8.2  
9.6  
146.8  
59.5  
16.4  
19.4  
25.1  
29.0  
ued Pr  
109.4  
97.6  
0.003  
0.004  
84.3  
87.0  
Discontin  
4
Data Sheet PU10029EJ01V0DS  
3SK230  
GPS AND NF TEST CIRCUIT AT f = 470 MHz  
V
G2S  
1 000 pF  
22 k  
1 000 pF  
Ferrite Beads  
40 pF OUTPUT  
L2  
INPUT 40 pF  
50 Ω  
50 Ω  
L1  
1 000 pF  
15 pF  
15 pF  
1 000 pF  
22 kΩ  
L3  
1 000 pF  
1 000 pF  
oduct  
: φ1.2 mm U.E.W φ5 mm IT  
VG1S  
VDS  
L
L
L
1
φ
φ
2: 1.2 mm U.E.W 5 mm IT  
µ
3: REC 2.2  
H
NF TEST CIRCUIT AT f = 55 MHz  
V
G2S  
V
DS  
ued Pr  
RFC  
2.2 k  
Ferrite  
Beads  
1 500 pF  
1 500 pF  
1 000 pF  
OUTPUT  
27 pF  
INPUT  
27 pF  
47 kΩ  
3.3 kΩ  
3.3 kΩ  
50 Ω  
47 kΩ  
50 Ω  
1 000 pF  
V
G1S  
Discontin  
5
Data Sheet PU10029EJ01V0DS  
3SK230  
The information in this document is current as of October, 2001. The information is subjeto  
change without notice. For actual design-in, refer to the latest publications of NEC's data shets or  
data books, etc., for the most up-to-date specifications of NEC semiconductor prduct. Not all  
products and/or types are available in every country. Please check with an NEC salepresentative  
for availability and additional information.  
No part of this document may be copied or reproduced in any form or by any meawithout prior  
written consent of NEC. NEC assumes no responsibility for any errors that may aphis document.  
NEC does not assume any liability for infringement of patents, copyrights or other nteal property rights of  
third parties by or arising from the use of NEC semiconductor products led ithis document or any other  
liability arising from the use of such products. No license, express, imotherise, is granted under any  
patents, copyrights or other intellectual property rights of NEC or others.  
Descriptions of circuits, software and other related information in this docment are provided for illustrative  
purposes in semiconductor product operation and applicatioexamples. The incorporation of these  
circuits, software and information in the design of customeuipment shall be done under the full  
responsibility of customer. NEC assumes no responsibility folosses incurred by customers or third  
parties arising from the use of these circuits, software anrmation.  
While NEC endeavours to enhance the quality, reliability asafty of NEC semiconductor products, customers  
agree and acknowledge that the possibility of defects hereof cannot be eliminated entirely. To minimize  
risks of damage to property or injury (inclung dath) to persons arising from defects in NEC  
semiconductor products, customers must incporasufficient safety measures in their design, such as  
redundancy, fire-containment, and anti-failufeatres.  
NEC semiconductor products are classifed ino the following three quality grades:  
"Standard", "Special" and "SpecificThe "Specific" quality grade applies only to semiconductor products  
developed based on a customer-desinated "quality assurance program" for a specific application. The  
recommended applications of a smiconductor product depend on its quality grade, as indicated below.  
Customers must check the qulity gade of each semiconductor product before using it in a particular  
application.  
"Standard": Computersquipment, communications equipment, test and measurement equipment, audio  
and visual eent, home electronic appliances, machine tools, personal electronic equipment  
and idustrial robots  
"Special": Transrtaon equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systms, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for lifsupport)  
"ScificAircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
Ty grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's  
data ets or data books, etc. If customers wish to use NEC semiconductor products in applications not  
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness  
to support a given application.  
(Note)  
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.  
and also includes its majority-owned subsidiaries.  
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for  
NEC (as defined above).  
M8E 00. 4-0110  
6
Data Sheet PU10029EJ01V0DS  
3SK230  
Business isue  
NEpoud Semiconductor Devices, Ltd.  
roup, Sales Division TEL: +81-3-3798-6372 FAX: +81-3-3798-6783 E-mail: salesinfo@csd-nec.com  
NEC und Semiconductor Devices Hong Kong Limited  
Hong ng Head Office  
Taipei Branch Office  
Korea Branch Office  
TEL: +852-3107-7303  
FAX: +852-3107-7309  
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859  
TEL: +82-2-528-0301  
FAX: +82-2-528-0302  
NEC Electron Devices European Operations  
http://www.nec.de/  
TEL: +49-211-6503-101 FAX: +49-211-6503-487  
California Eastern Laboratories, Inc.  
http://www.cel.com/  
TEL: +1-408-988-3500 FAX: +1-408-988-0279  
Technical issue  
NEC Compound Semiconductor Devices, Ltd.  
http://www.csd-nec.com/  
Sales Engineering Group, Sales Division  
E-mail: techinfo@csd-nec.com FAX: +81-44-435-1918  
0110  
厂商 型号 描述 页数 下载

ETC

3SK101 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | MICRO -X\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | MICRO-X ] 1 页

ETC

3SK102 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | MICRO -X\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | MICRO-X ] 1 页

ETC

3SK107 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

3SK107E 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

3SK107F 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

3SK107G 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

3SK108 晶体管| MOSFET | N沟道\n[ TRANSISTOR | MOSFET | N-CHANNEL ] 1 页

ETC

3SK108Q 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

ETC

3SK108R 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

ETC

3SK108S 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

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