Advance Technical Information
HiPerFETTM
VDSS = 1000 V
ID25 38 A
DS(on)= 0.26 Ω
IXFB 38N100Q
Power MOSFETs
=
Q-Class
R
N-ChannelEnhancementMode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
trr ≤ 300 ns
PLUS 264TM (IXFB)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
1000
1000
V
V
G
(TAB)
D
S
VGS
Continuous
Transient
±30
±40
V
V
VGSM
G = Gate
D = Drain
S = Source
TAB = Drain
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
38
152
38
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
60
5.0
mJ
J
Features
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
20
V/ns
●
Double metal process for low gate
resistance
● Unclamped Inductive Switching (UIS)
rated
PD
TJ
TC = 25°C
890
W
-55 ... +150
°C
●
Low package inductance
- easy to drive and to protect
TJM
150
-55 ... +150
°C
°C
● Fast intrinsic rectifier
Tstg
TL
1.6 mm (0.063 in.) from case for 10 s
300
°C
Applications
● DC-DC converters
● Switched-mode and resonant-mode
power supplies, >500kHz switching
● DC choppers
● Pulsegeneration
● Laser drivers
Symbol
VDSS
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Advantages
VGS = 0 V, ID = 1mA
1000
V
● PLUS 264TM package for clip or spring
mounting
● Space savings
● High power density
VGS(th)
IGSS
VDS = VGS, ID = 8mA
VGS = ±20 V, VDS = 0
3.0
5.0 V
±200 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
100 µA
5 mA
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Note 1
0.26 Ω
98949 (10/02)
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