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DXT651-13R

型号:

DXT651-13R

品牌:

DIODES[ DIODES INCORPORATED ]

页数:

6 页

PDF大小:

185 K

DXT651  
60V NPN LOW VCE(sat) TRANSISTOR IN SOT89  
Features  
Mechanical Data  
BVCEO > 60V  
Case: SOT89  
IC = 3A high Continuous Current  
Case material: Molded Plastic. “Green” Molding Compound.  
UL Flammability Rating 94V-0  
Low saturation voltage VCE(sat) < 300mV @ 1A  
Complementary PNP Type: DXT751  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish - Matte Tin Plated Leads, Solderable per  
MIL-STD-202, Method 208  
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
Weight: 0.052 grams (Approximate)  
C
E
SOT89  
E
B
C
B
C
Top View  
Pinout  
Top View  
Device Symbol  
Ordering Information (Note 4)  
Product  
DXT651-13  
DXT651-13R  
Marking  
KN2  
KN2  
Reel size (inches)  
Tape width (mm)  
Quantity per reel  
2,500  
13  
13  
12  
12  
4,000  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green"  
and Lead-Free.  
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)  
and <1000ppm antimony compounds.  
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.  
Marking Information  
KN2 = Product Type Marking Code  
= Manufacturer’s Marking Code  
YWW = Date Code Marking  
Y = Last digit of year (ex: 7 = 2007)  
WW = Week code (01 – 53)  
YWW  
KN2  
1 of 6  
www.diodes.com  
February 2013  
© Diodes Incorporated  
DXT651  
Document Number: DS31184 Rev: 5 - 2  
DXT651  
Maximum Ratings (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
80  
60  
5
Unit  
V
V
V
Collector Current  
3
A
Peak Pulse Collector Current  
Base Current  
6
A
ICM  
500  
mA  
IB  
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
Value  
1
Unit  
W
Power Dissipation (Note 5)  
PD  
RθJA  
Thermal Resistance, Junction to Ambient Air (Note 5)  
Thermal Resistance, Junction to Leads (Note 6)  
Operating and Storage Temperature Range  
125  
°C/W  
°C/W  
°C  
18.2  
RθJL  
-55 to +150  
TJ, TSTG  
Notes:  
5. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured  
when operating in a steady-state condition.  
6. Thermal resistance from junction to solder-point (on the exposed collector pad).  
Thermal Characteristics and Derating Information  
120  
25mm x 25mm 1oz Cu  
= 25°C  
25mm x 25mm 1oz Cu  
T
T
= 25°C  
amb  
amb  
100  
10  
1
100  
80  
60  
40  
20  
0
Single pulse  
D=0.5  
D=0.2  
Single Pulse  
D=0.05  
D=0.1  
100µ 1m 10m 100m  
1
10  
100  
1k  
100µ 1m 10m 100m  
1
10  
100  
1k  
Pulse Width (s)  
Pulse Width (s)  
Transient Thermal Impedance  
Pulse Power Dissipation  
1.0  
25mm x 25mm 1oz Cu  
0.8  
0.6  
0.4  
0.2  
0.0  
0
20 40 60 80 100 120 140 160  
Temperature (°C)  
Derating Curve  
2 of 6  
www.diodes.com  
February 2013  
© Diodes Incorporated  
DXT651  
Document Number: DS31184 Rev: 5 - 2  
DXT651  
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Test Conditions  
IC = 100A, IE = 0  
IC = 10mA, IB = 0  
IE = 100A, IC = 0  
VCB = 60V, IE = 0  
OFF CHARACTERISTICS (Note 7)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
80  
60  
5
V
V
V
BVCBO  
BVCEO  
BVEBO  
  
  
  
  
0.1  
10  
Collector-Base Cutoff Current  
µA  
µA  
ICBO  
IEBO  
  
  
V
CB = 60V, IE = 0, TA = +100°C  
Emitter-Base Cutoff Current  
0.1  
VEB = 4V, IC = 0  
ON CHARACTERISTICS (Note 7)  
I
C = 1A, IB = 100mA  
0.08  
0.23  
0.3  
0.6  
V
V
Collector-Emitter Saturation Voltage  
VCE(sat)  
IC = 3A, IB = 300mA  
IC = 1A, IB = 100mA  
VCE = 2V, IC = 1A  
Base-Emitter Saturation Voltage  
Base-Emitter Turn-On Voltage  
0.85  
0.8  
1.25  
1
V
V
VBE(sat)  
VBE(on)  
VCE = 2V, IC = 50mA  
300  
  
70  
100  
80  
200  
200  
185  
120  
V
CE = 2V, IC = 500mA  
VCE = 2V, IC = 1A  
CE = 2V, IC = 2A  
DC Current Gain  
hFE  
40  
V
AC CHARACTERISTICS  
Transition Frequency  
Output Capacitance  
140  
200  
MHz  
pF  
fT  
Cobo  
ton  
30  
VCE = 5V, IC = 100mA, f = 100MHz  
VCB = 10V, f = 1MHz  
  
  
  
35  
230  
VCC = 10V. IC = 500mA,  
IB1 = IB2 = 50mA  
  
ns  
ns  
Switching Times  
toff  
Notes:  
7. Measured under pulsed conditions. Pulse width 300μs. Duty cycle 2%.  
2.0  
350  
300  
V
= 2V  
CE  
1.8  
I
I
= 10mA  
= 8mA  
T
T
= 150°C  
= 85°C  
B
A
1.6  
1.4  
1.2  
250  
200  
150  
100  
A
B
T
= 25°C  
A
I
I
= 6mA  
= 4mA  
B
B
1.0  
0.8  
0.6  
T
= -55°C  
A
0.4  
I
= 2mA  
B
50  
0
0.2  
0.0  
0.001  
0.01  
0.1  
1
10  
0
1
2
3
4
5
VCE, COLLECTOR EMITTER VOLTAGE (V)  
IC, COLLECTOR CURRENT (A)  
Fig. 2 Typical Collector Current vs.Collector-Emitter Voltage  
Fig. 3 Typical DC Current Gain  
vs. Collector Current  
3 of 6  
www.diodes.com  
February 2013  
© Diodes Incorporated  
DXT651  
Document Number: DS31184 Rev: 5 - 2  
DXT651  
0.35  
0.3  
1.2  
1.0  
V
= 2V  
CE  
I
/I = 10  
B
C
0.25  
0.2  
0.8  
0.6  
0.4  
T
= -55°C  
= 25°C  
A
T
0.15  
0.1  
0.05  
0
A
T
= 150°C  
A
T
= 85°C  
A
T
= 85°C  
A
T
= 25°C  
T
= 150°C  
A
0.2  
A
T
= -55°C  
A
0.0  
0.0001  
0.001  
0.01  
0.1  
1
10  
0.0001  
0.001  
0.01  
0.1  
1
10  
IC, COLLECTOR CURRENT (A)  
IC, COLLECTOR CURRENT (A)  
Fig. 5 Typical Base-Emitter Turn-On Voltage  
vs. Collector Current  
Fig. 4 Typical Collector-Emitter Saturation Voltage  
vs. Collector Current  
1.2  
1.0  
0.8  
0.6  
60  
I
/I = 10  
B
C
f = 1MHz  
50  
40  
30  
20  
T
= -55°C  
A
T
= 25°C  
= 85°C  
A
0.4  
T
A
0.2  
0
T
= 150°C  
A
10  
0
0.0001  
0.001  
0.01  
0.1  
1
10  
IC, COLLECTOR CURRENT (A)  
0
5
10  
VR, REVERSE VOLTAGE (V)  
Fig. 7 Typical Output Capacitance Characteristics  
15  
20  
25  
30  
35 40  
Fig. 6 Typical Base-Emitter Saturation Voltage  
vs. Collector Current  
250  
200  
150  
100  
50  
0
V
= 5V  
CE  
f = 100MHz  
0
20  
IC, COLLECTOR CURRENT (mA)  
Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current  
40  
60  
80  
100  
4 of 6  
www.diodes.com  
February 2013  
© Diodes Incorporated  
DXT651  
Document Number: DS31184 Rev: 5 - 2  
DXT651  
Package Outline Dimensions  
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.  
D1  
C
SOT89  
Min  
Dim  
A
B
B1  
C
D
Max  
1.60  
0.62  
0.54  
0.44  
4.60  
1.83  
2.60  
H1  
1.40  
0.44  
0.35  
0.35  
4.40  
1.62  
2.29  
H
E
B1  
L
B
D1  
E
e
e
1.50 Typ  
8° (4X)  
H
H1  
L
3.94  
2.63  
0.89  
4.25  
2.93  
1.20  
A
All Dimensions in mm  
D
Suggested Pad Layout  
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.  
X1  
Dimensions Value (in mm)  
X
0.900  
1.733  
0.416  
1.300  
4.600  
1.475  
0.950  
1.125  
1.500  
X2 (2x)  
X1  
X2  
Y
Y1  
Y2  
Y3  
Y4  
C
Y1  
Y3  
Y
Y4  
Y2  
C
X (3x)  
5 of 6  
www.diodes.com  
February 2013  
© Diodes Incorporated  
DXT651  
Document Number: DS31184 Rev: 5 - 2  
DXT651  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  
final and determinative format released by Diodes Incorporated.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2013, Diodes Incorporated  
www.diodes.com  
6 of 6  
www.diodes.com  
February 2013  
© Diodes Incorporated  
DXT651  
Document Number: DS31184 Rev: 5 - 2  
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