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IXFP12N65X2M

型号：

IXFP12N65X2M

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

194 K

下载PDF手册
Preliminary Technical Information  
X2-Class HiperFETTM  
Power MOSFET  
VDSS = 650V  
ID25 = 12A  
IXFP12N65X2M  
RDS(on) 310m  
(Electrically Isolated Tab)  
N-Channel Enhancement Mode  
OVERMOLDED  
TO-220  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
Isolated Tab  
D = Drain  
D
TJ = 25C to 150C  
650  
650  
V
V
S
VDGR  
TJ = 25C to 150C, RGS = 1M  
G = Gate  
S = Source  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
ID25  
IDM  
TC = 25C, Limited by TJM  
TC = 25C, Pulse Width Limited by TJM  
12  
24  
A
A
IA  
TC = 25C  
TC = 25C  
6
A
EAS  
300  
mJ  
Features  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
50  
40  
V/ns  
W
International Standard Package  
Plastic Overmolded Tab  
High Voltage Package  
Low RDS(ON) and QG  
Avalanche Rated  
2500V~ Electrical Isolation  
Low Package Inductance  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
VISOL  
50/60 Hz, 1 Minute  
Mounting Torque  
2500  
V~  
Advantages  
Md  
1.13 / 10  
2.5  
Nm/lb.in  
g
Weight  
High Power Density  
Easy to Mount  
Space Savings  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
650  
V
V
3.0  
5.0  
100 nA  
IDSS  
10 A  
TJ = 125C  
500 A  
RDS(on)  
VGS = 10V, ID = 6A, Note 1  
310 m  
DS100750B(10/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXFP12N65X2M  
Symbol  
Test Conditions  
Characteristic Values  
OVERMOLDED TO-220  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
(IXFP...M)  
oP  
gfs  
VDS = 10V, ID = 6A, Note 1  
Gate Input Resistance  
4.8  
8.0  
4.0  
S
RGi  
Ciss  
Coss  
Crss  
1134  
712  
1
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
2
1
3
Effective Output Capacitance  
Co(er)  
Co(tr)  
42  
pF  
pF  
VGS = 0V  
Energy related  
Time related  
132  
VDS = 0.8 • VDSS  
td(on)  
tr  
td(off)  
tf  
27  
26  
45  
12  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 6A  
V
Terminals: 1 - Gate  
2 - Drain  
RG = 20(External)  
3 - Source  
Qg(on)  
Qgs  
18.5  
6.7  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 6A  
Qgd  
5.0  
RthJC  
RthCS  
3.10 C/W  
C/W  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
12  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
48  
1.4  
V
trr  
QRM  
IRM  
155  
1
13  
ns  
IF = 6A, -di/dt = 100A/μs  
μC  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXFP12N65X2M  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
12  
10  
8
24  
20  
16  
12  
8
V
= 10V  
8V  
V
= 10V  
9V  
GS  
GS  
8V  
7V  
7V  
6
6V  
5V  
4
6V  
5V  
2
4
0
0
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
12  
22  
0
5
10  
15  
20  
25  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 6A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
12  
10  
8
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 10V  
8V  
GS  
V
= 10V  
GS  
7V  
6V  
I
= 12A  
D
6
4
I
= 6A  
D
5V  
4V  
2
0
2
4
6
8
10  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 6A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
= 10V  
GS  
T
J
= 125oC  
BV  
DSS  
V
GS(th)  
T
= 25oC  
J
2
4
6
8
10  
12  
14  
16  
18  
20  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
TJ - Degrees Centigrade  
ID - Amperes  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXFP12N65X2M  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
12  
10  
8
10  
9
8
7
6
5
4
3
2
1
0
T
J
= - 40oC  
T
J
= 125oC  
25oC  
- 40oC  
25oC  
6
125oC  
4
2
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
0
1
2
3
4
5
6
7
8
9
10  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
10  
8
40  
35  
30  
25  
20  
15  
10  
5
V
= 325V  
DS  
I
I
= 6A  
D
G
= 10mA  
6
T
J
= 125oC  
4
T
J
= 25oC  
2
0
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Output Capacitance Stored Energy  
10000  
1000  
100  
10  
9
8
7
6
5
4
3
2
1
0
C
iss  
C
oss  
1
= 1 MHz  
f
C
rss  
0.1  
0
100  
200  
300  
400  
500  
600  
1
10  
100  
1000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFP12N65X2M  
Fig. 14. Maximum Transient Thermal Impedance  
Fig. 13. Forward-Bias Safe Operating Area  
10  
1
100  
10  
R
DS(  
on  
Limit  
)
100μs  
DC  
0.1  
1
1s  
100ms  
0.01  
0.001  
0.1  
0.01  
= 150oC  
= 25oC  
1ms  
T
J
T
C
10ms  
Single Pulse  
1
10  
100  
1,000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
VDS - Volts  
Pulse Width - Seconds  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_12N65X2(X3-S602) 9-09-16  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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