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IXGP20N120B

型号：

IXGP20N120B

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

500 K

下载PDF手册
High Voltage IGBT with  
Diode  
Designed for induction  
heating applications  
IXGP 20N120B  
IXGP 20N120BD1  
VCES  
IC25  
= 1200 V  
= 40 A  
VCE(sat) = 3.4 V  
tfi(typ)  
= 160 ns  
D1  
Maximum Ratings  
Symbol  
TestConditions  
TO-220 (IXGP)  
VCES  
VCGR  
TJ = 25°C to 150°C  
1200  
1200  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
C (TAB)  
G
C
IC25  
IC110  
ICM  
TC = 25°C  
40  
20  
A
A
A
E
TC = 110°C  
G = Gate  
C = Collector  
TAB = Collector  
TC = 25°C, 1 ms  
100  
E = Emitter  
SSOA  
(RBSOA)  
VGE = 15 V, TJ = 125°C, RG = 10 Ω  
Clamped inductive load  
ICM = 48  
@0.8 VCES  
A
Features  
z International standard TO-220  
package  
PC  
TC = 25°C  
190  
W
z IGBT and anti-parallel FRED for  
resonant power supplies  
- Induction heating  
- Rice cookers  
z MOS Gate turn-on  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Md  
Mounting torque  
1.13/10 Nm/lb.in.  
- drive simplicity  
z Fast Recovery Expitaxial Diode (FRED)  
- soft recovery with low IRM  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Weight  
4
g
Advantages  
z Saves space (two devices in one  
package)  
z
Easy to mount with 1 screw  
(isolated mounting screw hole)  
Reduces assembly time and cost  
z
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
VGE(th)  
ICES  
IC = 250 µA, VCE = VGE  
2.5  
5.0  
V
VCE = VCES  
VGE = 0 V  
20N120B  
20N120BD1  
25 µA  
50 µA  
IGES  
VCE = 0 V, VGE = 20 V  
100 nA  
VCE(sat)  
IC  
= 20A, VGE = 15 V  
2.9  
2.8  
3.4  
V
V
Note 2  
TJ=125°C  
© 2003 IXYS All rights reserved  
DS99088A(12/03)  
IXGP 20N120BD1  
IXGP 20N120BD1  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-220 (IXGP) Outline  
IC = 20A; VCE = 10 V,  
Note 2.  
12  
16  
S
Cies  
1040  
pF  
Coes  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
20N120B  
20N120BD1  
70  
80  
pF  
pF  
Cres  
23  
pF  
Qg  
62  
9
nC  
nC  
nC  
Qge  
Qgc  
IC = 20A, VGE = 15 V, VCE = 0.5 VCES  
Pins: 1 - Gate  
2 - Drain  
24  
td(on)  
tri  
20  
14  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 20 A; VGE = 15 V  
td(off)  
270  
380 ns  
VCE = 0.8 VCES; RG = Roff = 10 Ω  
Note 1.  
tfi  
Eoff  
220  
2.2  
360 ns  
3.5 mJ  
td(on)  
tri  
20  
15  
ns  
ns  
Inductive load, TJ = 125°C  
IC = 20A; VGE = 15 V  
Eon  
td(off)  
1.6  
340  
mJ  
ns  
VCE = 0.8 VCES; RG = Roff = 10 Ω  
Note 1  
tfi  
Eoff  
450  
5.0  
ns  
mJ  
RthJC  
0.65 K/W  
ReverseDiode(FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
TestConditions  
IF  
TC = 90°C  
10  
A
V
VF  
IF = 10 A, VGE = 0 V  
3.3  
IRM  
trr  
IF = 10 A; -diF/dt = 400 A/µs, VR = 600 V  
VGE = 0 V; TJ = 125°C  
14  
120  
A
ns  
trr  
IF = 1 A; -diF/dt = 100 A/µs; VR = 30 V, VGE = 0 V  
40  
ns  
RthJC  
2.5 K/W  
Notes: 1.  
2.  
Switching times may increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG.  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
,
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXGP 20N120BD1  
IXGP 20N120BD1  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
40  
35  
30  
25  
20  
15  
10  
5
160  
140  
120  
100  
80  
VGE = 15V  
13V  
11V  
VGE = 15V  
13V  
9V  
11V  
9V  
7V  
5V  
60  
40  
7V  
5V  
20  
0
0
0.5  
0.5  
6
1
1.5  
2
2.5  
3
3.5  
4
4.5  
0
-50  
4
2
4
6
8
VC E - Volts  
10 12 14 16 18 20  
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
40  
35  
30  
25  
20  
15  
10  
5
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
VGE = 15V  
13V  
11V  
VGE = 15V  
IC = 40A  
9V  
IC = 20A  
IC = 10A  
7V  
5V  
0
1
1.5  
2 2.5  
VCE - Volts  
3
3.5  
4
4.5  
-25  
0
25  
50  
75  
100 125 150  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emiiter voltage  
Fig. 6. Input Admittance  
60  
50  
40  
30  
20  
10  
0
6.5  
6
TJ = 25ºC  
5.5  
5
IC = 40A  
20A  
10A  
4.5  
4
3.5  
3
TJ = 125ºC  
25ºC  
-40ºC  
2.5  
2
1.5  
5
6
7
8
9
7
8
9
10 11 12 13 14 15 16 17  
VG E - Volts  
VG E - Volts  
© 2003 IXYS All rights reserved  
IXGP 20N120BD1  
IXGP 20N120BD1  
Fig. 8. Dependence of Turn-off  
Energy Loss on RG  
Fig. 7. Transconductance  
24  
21  
18  
15  
12  
9
16  
14  
12  
10  
8
TJ = 125ºC  
VGE = 15V  
VCE = 960V  
TJ = -40ºC  
25ºC  
125ºC  
IC = 40A  
IC = 20A  
6
6
4
3
2
IC = 10A  
110  
0
0
0
10  
20  
30  
40  
50  
60  
10  
30  
50  
70 90  
R G - Ohms  
130  
150  
I C - Amperes  
Fig. 9. Dependence of Turn-Off  
Energy Loss on Ic  
Fig. 10. Dependence of Turn-off  
Energy Loss on Temperature  
14  
12  
10  
8
14  
12  
10  
8
RG = 10Ω  
RG = 100Ω - - -  
VGE = 15V  
RG = 10Ω  
RG = 100Ω - - -  
IC = 40A  
VGE = 15V  
VCE = 960V  
VCE = 960V  
TJ = 125ºC  
TJ = 125ºC  
6
6
IC = 20A  
4
4
TJ = 25ºC  
2
2
IC = 10A  
0
0
25 35 45 55 65 75 85 95 105 115 125  
10  
15  
20 25  
I C - Amperes  
30  
35  
40  
TJ - Degrees Centigrade  
Fig. 11. Dependence of Turn-off  
Switching Time on RG  
Fig. 12. Dependence of Turn-off  
Switching Time on Ic  
1400  
1200  
1000  
800  
550  
500  
450  
400  
350  
300  
250  
200  
td(off)  
tfi  
td(off)  
tfi  
RG = 10Ω  
- - - - - -  
TJ = 125ºC  
GE = 15V  
- - - - - -  
V
VGE = 15V  
VCE = 960V  
VCE = 960V  
TJ = 125ºC  
IC = 10A  
IC = 40A  
600  
400  
TJ = 25ºC  
IC = 20A  
70  
R G - Ohms  
200  
10  
30  
50  
90  
110  
130  
150  
10  
15  
20  
25  
I C - Amperes  
30  
35  
40  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXGP 20N120BD1  
IXGP 20N120BD1  
Fig. 13. Dependence of Turn-off  
Switching Time on Temperature  
Fig. 14. Gate Charge  
500  
450  
400  
350  
300  
250  
200  
15  
12  
9
td(off)  
tfi  
RG = 10Ω  
VGE = 15V  
VCE = 960V  
VCE = 600V  
IC = 20A  
IG = 10mA  
IC = 40A  
- - - - - -  
IC = 10A  
IC = 40A  
IC = 20A  
6
3
0
25 35 45 55 65 75 85 95 105 115 125  
TJ - Degrees Centigrade  
0
10  
20  
30  
40  
50  
60  
70  
Q G - nanoCoulombs  
Fig. 15. Capacitance  
10000  
1000  
100  
f = 1 MHz  
C
ies  
C
oes  
C
res  
10  
0
5
10  
15  
20  
VC E - Volts  
25  
30  
35  
40  
Fig. 16. Maximum Transient Thermal Resistance  
1.0  
0.5  
0.1  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2003 IXYS All rights reserved  
IXGP 20N120BD1  
IXGP 20N120BD1  
30  
A
2000  
40  
A
nC  
25  
TVJ= 100°C  
VR = 600V  
TVJ= 100°C  
VR = 600V  
1500  
Qr  
30  
IF  
IRM  
20  
15  
10  
5
IF= 20A  
IF= 10A  
IF= 5A  
1000  
500  
0
20  
10  
0
TVJ=150°C  
TVJ=100°C  
IF= 20A  
IF= 10A  
IF= 5A  
TVJ= 25°C  
0
A/µs  
-diF/dt  
0
1
2
3
VF  
4 V  
100  
1000  
0
200 400 600 1000  
A/µs  
-diF/dt  
Fig. 13. Forward current IF versus VF  
2.0  
Fig. 14. Reverse recovery charge Qr  
versus -diF/dt  
Fig. 15. Peak reverse current IRM  
versus -diF/dt  
150  
ns  
120  
1.2  
µs  
TVJ= 100°C  
VR = 600V  
V
140  
130  
120  
110  
100  
90  
TVJ= 100°C  
VFR  
trr  
tfr  
1.5  
Kf  
IF = 10A  
80  
40  
0
0.8  
tfr  
VFR  
1.0  
IRM  
IF= 20A  
IF= 10A  
IF= 5A  
0.4  
0.5  
Qr  
0.0  
0.
A/µs  
0
40  
80  
120  
160  
0
200 400 600 1000  
0
200 400 600 1000  
°C  
A/µs  
diF/dt  
TVJ  
-diF/dt  
Fig. 16. Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 17. Recovery time trr versus -diF/dt  
Fig. 18. Peak forward voltage VFR and  
tfr versus diF/dt  
10  
K/W  
Constants for ZthJC calculation:  
1
i
Rthi (K/W)  
ti (s)  
ZthJC  
0.1  
1
2
3
1.449  
0.558  
0.493  
0.0052  
0.0003  
0.017  
0.01  
DSEP 8-12A  
0.001  
0.00001  
s
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 19. Transient thermal resistance junction-to-case  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
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