HiPerFETTM
Power MOSFETs
Q-Class
IXFH 52N30Q
IXFK 52N30Q
IXFT 52N30Q
VDSS = 300 V
ID25 = 52 A
RDS(on) = 60 mW
trr
£ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Low Gate Charge and Capacitances
Preliminary data
Symbol
TestConditions
Maximum Ratings
TO-247AD(IXFH)
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
300
300
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
(TAB)
ID25
IDM
IAR
TC = 25°C, Chip capability
TC = 25°C, pulse width limited by TJM
TC = 25°C
52
208
52
A
A
A
TO-268 (D3) ( IXFT)
EAR
EAS
TC = 25°C
TC = 25°C
30
1.5
mJ
J
G
(TAB)
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
5
V/ns
S
PD
TC = 25°C
360
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
TO-264AA(IXFK)
TL
1.6 mm (0.063 in) from case for 10 s
300
°C
G
D
Md
Mountingtorque
TO-247
TO-264
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
S
D (TAB)
Weight
Symbol
TO-247
TO-264
TO-268
6
10
4
g
g
g
G = Gate
S = Source
TAB = Drain
Features
• Low gate charge
TestConditions
CharacteristicValues
• Internationalstandardpackages
• EpoxymeetUL94V-0,flammability
classification
(TJ = 25°C, unless otherwise specified)
min. typ. max.
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Avalanche energy and current rated
• Fast intrinsic Rectifier
VDSS
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 4 mA
300
2
V
V
VGS(th)
4
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±200 nA
50 mA
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
Advantages
1
mA
• Easy to mount
• Space savings
• High power density
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
60 mW
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98522B(7/00)
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