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IXFN38N100Q2

型号：

IXFN38N100Q2

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

5 页

PDF大小：

189 K

下载PDF手册
HiPerFETTM  
Power MOSFET  
IXFN38N100Q2  
VDSS  
ID25  
= 1000V  
= 38A  
RDS(on) ≤ 250mΩ  
trr ≤ 300ns  
N-Channel Enhancement Mode  
Avalanche Rated, Low Qg, Low Intrinsic Rg  
High dV/dt, Low trr  
miniBLOC, SOT-227 B (IXFN)  
E153432  
S
Symbol  
TestConditions  
Maximum Ratings  
G
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1 MΩ  
1000  
1000  
V
V
S
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
D
ID25  
IDM  
IAR  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
38  
152  
38  
A
A
A
G = Gate  
S = Source  
D = Drain  
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
60  
5
mJ  
J
dv/dt  
IS ≤ IDM, VDD ≤ VDSS , TJ ≤ 150°C  
20  
V/ns  
Features  
•Double metal process for low  
gate resistance  
PD  
TJ  
TC = 25°C  
890  
W
-55 ... +150  
°C  
•miniBLOC, with Aluminium nitride  
isolation  
TJM  
Tstg  
150  
-55 ... +150  
°C  
°C  
•Unclamped Inductive Switching (UIS)  
rated  
VISOL  
Md  
50/60 Hz, RMS, t = 1 minute  
2500  
V
•Low package inductance  
•Fast intrinsic Rectifier  
Mounting torque  
Terminalconnectiontorque  
1.5/13 Nm/lb.in.  
1.5/11.5 Nm/lb.in.  
Applications  
Weight  
Symbol  
30  
g
•DC-DC converters  
•Switched-mode and resonant-mode  
power supplies  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
•DC choppers  
•Pulse generators  
VDSS  
VGS = 0V, ID = 1mA  
1000  
3.0  
V
V
VGS(th)  
IGSS  
VDS = VGS, ID = 8mA  
VGS = ±30V, VDS = 0V  
5.5  
Advantages  
•Easy to mount  
•Space savings  
•High power density  
±200 nA  
IDSS  
VDS = VDSS  
VGS = 0V  
50 μA  
3 mA  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
250 mΩ  
DS99027B(05/08)  
© 2008 IXYS All rights reserved  
IXFN38N100Q2  
Symbol  
gfs  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
miniBLOC, SOT-227 B Outline  
VDS = 20V, ID = 0.5 • ID25 Note 1  
VGS = 0 V, VDS = 25V, f = 1MHz  
Resistive Switching Time  
24  
40  
S
Ciss  
Coss  
Crss  
13.5  
1035  
180  
nF  
pF  
pF  
td(on)  
25  
ns  
tr  
td(off)  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
28  
57  
ns  
ns  
M4 screws (4x) supplied  
Dim.  
Millimeter  
Inches  
tf  
15  
ns  
Min.  
Max.  
Min.  
Max.  
A
B
31.50  
7.80  
31.88  
8.20  
1.240  
0.307  
1.255  
0.323  
QG(on)  
QGS  
250  
60  
nC  
nC  
nC  
C
D
4.09  
4.09  
4.29  
4.29  
0.161  
0.161  
0.169  
0.169  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
E
F
4.09  
14.91  
4.29  
15.11  
0.161  
0.587  
0.169  
0.595  
QGD  
105  
G
H
30.12  
38.00  
30.30  
38.23  
1.186  
1.496  
1.193  
1.505  
RthJC  
RthCK  
0.14 °C/W  
°C/W  
J
K
11.68  
8.92  
12.22  
9.60  
0.460  
0.351  
0.481  
0.378  
0.05  
L
M
0.76  
12.60  
0.84  
12.85  
0.030  
0.496  
0.033  
0.506  
N
O
25.15  
1.98  
25.42  
2.13  
0.990  
0.078  
1.001  
0.084  
P
Q
4.95  
26.54  
5.97  
26.90  
0.195  
1.045  
0.235  
1.059  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
R
S
3.94  
4.72  
4.42  
4.85  
0.155  
0.186  
0.174  
0.191  
Symbol  
TestConditions  
T
U
24.59  
-0.05  
25.07  
0.1  
0.968  
-0.002  
0.987  
0.004  
IS  
VGS = 0V  
38  
A
A
ISM  
Repetitive, pulse width limited by TJM  
152  
VSD  
IF = IS, VGS = 0V, Note 1  
1.5  
V
trr  
300 ns  
IF = 25A  
-di/dt = 100 A/μs  
VR = 100V  
QRM  
IRM  
1.4  
9
μC  
A
Note: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665  
6,404,065 B1 6,683,344  
6,259,123 B1 6,534,343  
6,727,585  
6,710,405 B26,759,692 7,063,975 B2  
6,771,478 B27,071,537  
7,005,734 B2  
7,157,338B2  
by one or more of the following U.S. patents:  
4,850,072 5,017,508 5,063,307 5,381,025  
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505  
6,710,463  
IXFN38N100Q2  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
40  
35  
30  
25  
20  
15  
10  
5
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
VGS = 10V  
6V  
6V  
5V  
5V  
0
0
0
0
1
2
3
4
5
6
7
8
9
10 11 12  
0
2
4
6
8
10 12 14 16 18 20 22 24  
VDS - Volts  
VDS - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
D = 19A  
Fig. 4. RDS(on) Normalized to I  
Value vs. Junction Temperature  
40  
35  
30  
25  
20  
15  
10  
5
3.2  
2.8  
2.4  
2.0  
1. 6  
VGS = 10V  
6V  
VGS = 10V  
5V  
I D= 38A  
I D= 19A  
1. 2  
0.8  
0.4  
0
2
4
6
8
10 12 14 16 18 20 22 24  
VDS - Volts  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
D = 19A  
Fig. 5. RDS(on) Normalized to I  
Fig. 6. Drain Current vs.  
Case Temperature  
Value vs. Drain Current  
2.6  
2.4  
2.2  
2.0  
1. 8  
1. 6  
1. 4  
1. 2  
1. 0  
0.8  
40  
35  
30  
25  
20  
15  
10  
5
VGS = 10V  
º
TJ = 125 C  
º
TJ = 25 C  
0
10  
20  
30  
40  
50  
60  
70  
80  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
I D - Amperes  
TC - Degrees Centigrade  
© 2008 IXYS All rights reserved  
IXFN38N100Q2  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
80  
70  
60  
50  
40  
30  
20  
10  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
TJ = - 40  
º
C
TJ = 125 C  
º
º
25 C  
º
25 C  
º
- 40 C  
º
12 5 C  
0
0
0
10  
20  
30  
40  
50  
60  
70  
250  
10  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
1.2  
40  
I D - Amperes  
VGS - Volts  
Fig. 9. Source Current vs. Source-To-  
Drain Voltage  
Fig. 10. Gate Charge  
10  
8
6
4
2
0
90  
80  
70  
60  
50  
40  
30  
20  
10  
VDS = 500V  
I D= 19A  
I G= 10mA  
º
TJ = 125 C  
º
TJ = 25 C  
0
0
50  
100  
150  
200  
0.2  
0.4  
0.6  
0.8  
1.0  
VSD - Volts  
Q G - nanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
100000  
10000  
1000  
1.000  
f = 1MHz  
C
iss  
0.100  
0.010  
0.001  
C
oss  
C
rss  
10 0  
0.0001  
0.001  
0.01  
0.1  
1
0
5
10  
15  
20  
25  
30  
35  
Pulse Width - Seconds  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: F_38N100Q2(95)5-27-08-B  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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