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IXGH36N60A3

型号：

IXGH36N60A3

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

285 K

下载PDF手册
GenX3TM 600V  
IGBTs  
IXGA36N60A3  
IXGP36N60A3  
IXGH36N60A3  
VCES = 600V  
IC110 = 36A  
VCE(sat) 1.4V  
TO-263 AA (IXGA)  
Ultra Low Vsat PT IGBT for  
up to 5kHz Switching  
G
E
C (Tab)  
Symbol  
Test Conditions  
Maximum Ratings  
TO-220AB (IXGP)  
VCES  
VCGR  
TC = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C, RGE = 1M  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
G
C
C (Tab)  
E
IC110  
ICM  
TC = 110°C  
36  
A
A
TO-247 (IXGH)  
TC = 25°C, 1ms  
200  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 5  
ICM = 60  
A
(RBSOA)  
Clamped Inductive Load  
VCE VCES  
PC  
TC = 25°C  
220  
W
G
C
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
C (Tab)  
E
TJM  
Tstg  
G = Gate  
C
= Collector  
Tab = Collector  
-55 ... +150  
E = Emitter  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220 & TO-247)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Features  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
Optimized for Low Conduction Losses  
International Standard Packages  
Advantages  
High Power Density  
Low Gate Drive Requirement  
Symbol Test Conditions  
(TJ = 25°C unless otherwise specified)  
Characteristic Values  
Min.  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
600  
3.0  
V
V
5.5  
Power Inverters  
UPS  
ICES  
VCE = VCES, VGE = 0V  
25 A  
250 A  
Motor Drives  
SMPS  
TJ = 125°C  
PFC Circuits  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
Inrush Current Protection Circuits  
VCE(sat)  
IC = 30A, VGE = 15V, Note 1  
1.4  
V
© 2013 IXYS CORPORATION, All Rights Reserved  
DS100006A(7/13)  
IXGA36N60A3 IXGP36N60A3  
IXGH36N60A3  
Symbol  
Test Conditions  
Characteristic Values  
TO-220 (IXGP) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 30A, VCE = 10V, Note 1  
25  
42  
S
Cies  
Coes  
Cres  
2380  
115  
30  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
Qg  
80  
12  
36  
nC  
nC  
nC  
Qge  
Qgc  
IC = 30A, VGE = 15V, VCE = 0.5 • VCES  
Pins: 1 - Gate  
td(on)  
tri  
18  
23  
ns  
2 - Collector  
3 - Emitter  
Inductive load, TJ = 25°C  
ns  
mJ  
ns  
IC = 30A, VGE = 15V  
Eon  
td(off)  
tfi  
0.74  
330  
325  
3.00  
VCE = 400V, RG = 5  
Note 2  
ns  
Eoff  
mJ  
td(on)  
tri  
18  
25  
ns  
ns  
Inductive load, TJ = 125°C  
IC = 30A, VGE = 15V  
Eon  
td(off)  
tfi  
1.50  
500  
500  
5.30  
mJ  
ns  
VCE = 400V, RG = 5  
Note 2  
ns  
Eoff  
mJ  
RthJC  
RthCS  
0.56 °C/W  
TO-247 (IXGH) Outline  
(TO-247)  
(TO-220)  
0.25  
0.50  
°C/W  
°C/W  
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
1 - Gate  
2,4 - Collector  
3 - Emitter  
TO-263 (IXGA) Outline  
1 - Gate  
2,4 - Collector  
3 - Emitter  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
6,259,123 B1  
6,306,728 B1  
IXGA36N60A3 IXGP36N60A3  
IXGH36N60A3  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
60  
50  
40  
30  
20  
10  
0
300  
250  
200  
150  
100  
50  
V
= 15V  
GE  
V
= 15V  
GE  
13V  
11V  
9V  
13V  
11V  
9V  
7V  
7V  
5V  
5V  
0
0.0  
0.5  
1.0  
1.5  
2.0  
0
2
4
6
8
10  
12  
14  
16  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
60  
50  
40  
30  
20  
10  
0
V
= 15V  
GE  
V
= 15V  
GE  
13V  
11V  
9V  
I
I
= 60A  
= 30A  
C
C
7V  
5V  
I
= 15A  
C
0.0  
0.5  
1.0  
1.5  
2.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
200  
4.0  
180  
160  
140  
120  
100  
80  
T
J
= 25ºC  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
I
= 60A  
C
30A  
15A  
60  
T
J
= 125ºC  
25ºC  
- 40ºC  
40  
20  
0
5
6
7
8
9
10  
11  
12  
13  
14  
15  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
VGE - Volts  
VGE - Volts  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXGA36N60A3 IXGP36N60A3  
IXGH36N60A3  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
T
J
= - 40ºC  
V
= 300V  
CE  
I
I
= 30A  
C
G
= 10 mA  
25ºC  
125ºC  
6
4
2
0
0
10  
20  
30  
40  
50  
60  
70  
80  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Reverse-Bias Safe Operating Area  
Fig. 10. Capacitance  
70  
60  
50  
40  
30  
20  
10  
0
10,000  
1,000  
100  
f
= 1 MHz  
C
C
ies  
oes  
T
= 125ºC  
J
R
= 5Ω  
G
dv / dt < 10V / ns  
C
res  
10  
100  
200  
300  
400  
500  
600  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXGA36N60A3 IXGP36N60A3  
IXGH36N60A3  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
Fig. 13. Inductive Switching Energy Loss vs.  
Junction Temperature  
11  
9
2.0  
12  
10  
8
4.0  
3.2  
2.4  
1.6  
0.8  
0.0  
E
R
E
on - - - -  
off  
= 5Ω V  
  
= 15V  
GE  
G
1.6  
1.2  
0.8  
0.4  
0.0  
V
= 400V  
CE  
I
= 60A  
C
E
E
on - - - -  
I
I
= 60A  
= 30A  
C
C
off  
T
J
= 125ºC , V = 15V  
GE  
V
= 400V  
CE  
7
5
6
I
= 30A  
C
3
4
I
= 15A  
C
I
= 15A  
C
1
2
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
0
20  
40  
60  
80  
100  
120  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 15. Inductive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 14. Inductive Switching Energy Loss vs.  
Collector Current  
950  
1300  
1100  
900  
11  
9
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
t f  
t
d(off) - - - -  
E
R
E
on - - - -  
off  
T
J
= 125ºC, V = 15V  
GE  
= 5ꢀ  
V
  
= 15V  
GE  
G
850  
750  
650  
550  
450  
V
= 400V  
CE  
V
= 400V  
CE  
7
I
= 60A  
C
T
J
= 125ºC  
700  
5
T
J
= 25ºC  
I
= 15A, 30A  
C
500  
3
300  
1
0
20  
40  
60  
80  
100  
120  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
RG - Ohms  
IC - Amperes  
Fig. 16. Inductive Turn-off Switching Times vs.  
Collector Current  
Fig. 17. Inductive Turn-off Switching Times vs.  
Junction Temperature  
850  
750  
650  
550  
450  
350  
250  
600  
540  
480  
420  
360  
300  
240  
800  
700  
600  
500  
400  
300  
640  
560  
480  
400  
320  
240  
t f  
t
t
d(off) - - - -  
t f  
d(off) - - - -  
R
G
= 5Ω , V = 15V  
R
= 5ꢀ , V = 15V  
GE  
G
GE  
V
= 400V  
V
= 400V  
CE  
CE  
T
J
= 125ºC  
`
I
= 15A, 30A, 60A  
C
T
J
= 25ºC  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
IC - Amperes  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXGA36N60A3 IXGP36N60A3  
IXGH36N60A3  
Fig. 18. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Fig. 19. Inductive Turn-on Switching Times vs.  
Junction Temperature  
150  
120  
90  
60  
30  
0
110  
90  
70  
50  
30  
10  
65  
55  
45  
35  
25  
15  
5
27  
t r  
t
d(on) - - - -  
T
J
= 125ºC, V = 15V  
GE  
25  
I
= 60A  
C
V
= 400V  
I = 60A  
C
CE  
23  
21  
19  
17  
15  
t r  
t
d(on) - - - -  
R
= 5Ω , V = 15V  
GE  
G
V
= 400V  
CE  
I
= 30A  
C
I
I
= 30A  
= 15A  
C
C
I
= 15A  
C
0
20  
40  
60  
80  
100  
120  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 20. Inductive Turn-on Switching Times vs.  
Collector Current  
60  
50  
40  
30  
20  
10  
25  
23  
21  
19  
17  
15  
t r  
td(on)  
- - - -  
R
G
= 5ꢀ , V = 15V  
GE  
V
= 400V  
CE  
T
J
= 125ºC  
T
J
= 25ºC  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
IC - Amperes  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS REF: G_36N60A3(55) 7-22-13-B  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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