ETC
|
FZ800R06KF3
|
晶体管| IGBT | N -CHAN | 600V V( BR ) CES | 800A I(C ) | M : HL093HW048\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 800A I(C) | M:HL093HW048
] |
1 页
|
|
INFINEON
|
FZ800R12KE3
|
62毫米C- Serien MODUL MIT海沟/ Feldstopp IGBT3 UND发射极控制二极管3[ 62mm C-Serien Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode ] |
9 页
|
|
ETC
|
FZ800R12KF1
|
晶体管| IGBT功率模块|独立| 1.2KV V( BR ) CES | 800A I(C )\n[ TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 800A I(C)
] |
2 页
|
|
ETC
|
FZ800R12KF4
|
IGBT模块\n[ IGBT Module
] |
4 页
|
|
INFINEON
|
FZ800R12KL4C
|
TECHNISCHE信息/技术信息[ Technische Information / Technical Information ] |
8 页
|
|
ETC
|
FZ800R12KS4
|
IGBT -模块[ IGBT-Module ] |
9 页
|
|
INFINEON
|
FZ800R12KS4B2NOSA1
|
[ Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 ] |
8 页
|
|
ETC
|
FZ800R12KS4V2
|
IGBT模块\n[ IGBT Module
] |
9 页
|
|
EUPEC
|
FZ800R12KS4_B2
|
与铝碳化硅基板和短尾巴IGBT2的高开关频率高功率模块[ High Power Module with AlSiC base plate and short tail IGBT2 for high switching frequency ] |
8 页
|
|
ETC
|
FZ800R16KF4
|
晶体管| IGBT功率模块|独立| 1.6KV V( BR ) CES | 800A I(C )\n[ TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.6KV V(BR)CES | 800A I(C)
] |
4 页
|
|