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VUC36-16GO2

型号:

VUC36-16GO2

品牌:

LITTELFUSE[ LITTELFUSE ]

页数:

2 页

PDF大小:

58 K

VUC 36  
IdAVM  
ITAVM  
=
=
39 A  
31 A  
Three Phase  
Rectifier Bridge  
with Fast Diodes and "Softstart" Thyristor  
VRRM = 1200/1600 V  
4
3
2
2
4
8
1
VRSM  
VRRM  
Type  
7
6
5
V
V
1
6
7
1300  
1700  
1200  
1600  
VUC 36-12go2  
VUC 36-16go2  
3
8
5
Symbol  
Conditions  
Maximum Ratings  
Diode Thyristor  
Features  
Package with DCB ceramic base plate  
Isolation voltage 3600 V~  
Planar passivated chips  
Fast recovery diodes to reduce EMI  
Separate thyristor for softstart  
Solderable terminals  
IdAV  
IdAVM  
ITAVM  
TK = 85°C, module  
module  
TK = 85°C, DC  
34  
39  
-
-
-
31  
A
A
A
IFSM, ITSM  
TVJ = 45°C  
VR = 0  
t = 10 ms (50 Hz), sine 300  
t = 8.3 ms (60 Hz), sine 330  
400  
440  
A
A
UL registered E 72873  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine 270  
t = 8.3 ms (60 Hz), sine 300  
360  
400  
A
A
Applications  
Input rectifier for switching power  
supplies (SMPS)  
Softstart capacitor charging  
Electric drives and auxiliaries  
I2t  
TVJ = 45°C  
VR = 0  
t = 10 ms (50 Hz), sine 450  
t = 8.3 ms (60 Hz), sine 460  
800  
810  
A2s  
A2s  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine 365  
t = 8.3 ms (60 Hz), sine 380  
650  
670  
A2s  
A2s  
Advantages  
Easy to mount with two screws  
Space and weight savings  
Improved temperature & power cycling  
Up to 10 dB lower EMI/RFI  
compared to standard rectifier  
(di/dt)cr  
TVJ = TVJM  
repetitive, IT = 50 A  
150  
A/µs  
f= 400 Hz, tP = 200 µs  
VD = 2/3 VDRM  
IG = 0.3 A  
diG /dt = 0.3 A/µs  
non repetitive, IT = ITAVM  
500  
200  
A/µs  
V/µs  
(dv/dt)cr  
TVJ = TVJM; VDR = 2/3 VDRM  
RGK = ; method 1 (linear voltage rise)  
VRGM  
PGM  
10  
10  
V
Dimensions in mm (1 mm = 0.0394")  
TVJ = TVJM  
IT = ITAVM  
tp = 30 µs  
tp = 10 ms  
<
<
W
1
0.5  
W
W
PGAVM  
TVJ  
TVJM  
Tstg  
-40...+125  
125  
-40...+125  
°C  
°C  
°C  
VISOL  
50/60 Hz, RMS  
IISOL < 1 mA  
t = 1 min  
t = 1 s  
3000  
3600  
V~  
V~  
Md  
Mounting torque  
(M5)  
2-2.5  
Nm  
(10-32 UNF)  
18-22  
lb.in.  
Weight  
typ.  
28  
g
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated  
IXYS reserves the right to change limits, test conditions and dimensions.  
20100709b  
© 2010 IXYS All rights reserved  
1 - 2  
VUC 36  
VUC 36  
Symbol  
IR, ID  
Conditions  
Characteristic Values  
Diode Thyristor  
VR = VRRM; VD = VDRM  
TVJ = TVJM  
TVJ = 25°C  
<
5
<
<
5
mA  
< 0.3  
0.3 mA  
VF, VT  
IF = 55 A; IT = 45 A  
TVJ = 25°C  
<1.85  
<
1.4  
V
V
VT0  
rT  
For power-loss calculations only  
TVJ = 125°C  
1.2  
16  
0.85  
10 mΩ  
VGT  
IGT  
VD = 6 V  
VD = 6 V  
TVJ = 25°C  
TVJ = 25°C  
<
<
1.5 V  
80 mA  
VGD  
IGD  
VD = 2/3 VDRM  
VD = 2/3 VDRM  
TVJ = TVJM  
TVJ = TVJM  
<
<
0.2  
5
V
mA  
IL  
tG = 30 μs; IG = 0.3 A  
diG/dt = 0.3 A/μs  
TVJ = 25°C  
<
300 mA  
IH  
VD = 6 V; RGK = ∞  
TVJ = 25°C  
<
<
100 mA  
tgd  
VD = ½VDRM; IG = 0.3 A TVJ = 25°C  
diG/dt = 0.3 A/μs  
2.5 μs  
tq  
IT = 15 A; tp = 300 μs; -di/dt = 10 A/μs; TVJ = 125°C  
VR = 100 V; dv/dt = 20 V/μs; VD = 2/3 VDRM  
typ. 130 μs  
μs  
trr  
IF = 10 A; VR = ½VRRM TVJ = 25°C  
< 1.5  
-
-di/dt = 10 A/μs  
RthJC  
RthJH  
per thyristor (diode); DC current  
per module  
per thyristor (diode); DC current  
per module  
1.4  
0.233  
2.0  
0.9 K/W  
- K/W  
1.1 K/W  
- K/W  
0.333  
dS  
dA  
a
Creeping distance on surface  
Creepage distance in air  
Max. allowable acceleration  
7
7
mm  
mm  
50 m/s2  
IXYS reserves the right to change limits, test conditions and dimensions.  
20100709b  
© 2010 IXYS All rights reserved  
2 - 2  
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