NEC's 1550 nm InGaAsP MQW FP
PULSED LASER DIODE
NX7529BB-AA
IN COAXIAL PACKAGE
FOR OTDR APPLICATION (20 mW MIN)
FEATURES
DESCRIPTION
NEC's NX7529BB-AA is a 1550 nm Multiple Quantum Well
(MQW) structured Fabry-Perot (FP) laser diode coaxial mod-
ule with single mode fiber. This module is specified to operate
under pulsed conditions and is designed for a light source of
Optical Time Domain Reflectometer(OTDR).
• HIGH OUTPUT POWER:
Pf = 40 mW at IFP = 400 mA,
Pulse Conditions: Pulse width (PW) = 10 µs, Duty = 1%.
• LONG WAVELENGTH:
λC = 1550 nm
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25°C)
PART NUMBER
NX7529BB-AA
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
VFP
Forward Voltage, IFP = 400 mA, PW = 10 µs,
V
2.5
4.0
Duty = 1%
ITH
Pf
Threshold Current
mA
40
40
50
Optical Output Power from Fiber, IFP = 400 mA,
mW
20
PW = 10 µs, Duty = 1%
λC
σ
Center Wavelength, IFP = 400 mA, PW = 10 µs,
Duty = 1%, RMS (-20 dB)
nm
nm
1530
1550
6.0
1570
10.0
Spectral Width, IFP = 400 mA, PW = 10 µs,
Duty = 1%, RMS (-20 dB)
tr
tf
Rise Time, 10-90%
Fall Time, 90-10%
ns
ns
1.0
1.0
ELECTRO-OPTICAL CHARACTERISTICS (TC = 0 to +60°C)
PART NUMBER
NX7529BB-AA
TYP
SYMBOLS
PARAMETERS AND CONDITIONS
Threshold Current
UNITS
mA
MIN
MAX
Ith
Pf
75
Optical Output Power from Fiber, IFP = 400 mA,
mW
10
PW = 10 µs, Duty = 1%
λC
Center Wavelength, IFP = 400 mA, PW = 10 µs,
Duty = 1%, RMS (-20 dB)
nm
1520
1585
10
∆λ/∆T
Temperature Dependency of Center Wavelength
nm/°C
0.35
σ
Spectral Width, IFP = 400 mA, PW = 10 µs,
nm
Duty = 1%, RMS (-20 dB)
California Eastern Laboratories
