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IXGP30N60B2

型号：

IXGP30N60B2

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

549 K

下载PDF手册
Advance Technical Data  
HiPerFASTTM IGBT  
VCES  
IC25  
= 600 V  
= 70 A  
IXGP 30N60B2  
VCE(sat) < 1.8 V  
Optimized for 10-25 KHz hard  
switching and up to 150 KHz  
resonant switching  
tfityp  
= 82 ns  
Symbol  
Test Conditions  
Maximum Ratings  
TO-220 (IXSP)  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
600  
600  
V
V
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
C (TAB)  
G
C
E
IC25  
IC110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C  
TC = 25°C, 1 ms  
70  
30  
150  
A
A
A
G = Gate,  
C = Collector,  
E = Emitter,  
TAB = Collector  
SSOA  
(RBSOA)  
PC  
VGE = 15 V, TVJ = 125°C, RG = 10 Ω  
Clamped inductive load @ ≤ 600 V  
TC = 25°C  
ICM = 60  
A
Features  
190  
W
z
Medium frequency IGBT  
Square RBSOA  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
z
z
z
High current handling capability  
MOS Gate turn-on  
- drive simplicity  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Applications  
Md  
Mounting torque  
1.13/10Nm/lb.in.  
z
PFC circuits  
z
Uninterruptible power supplies (UPS)  
z
Weight  
4
g
Switched-mode and resonant-mode  
power supplies  
z
AC motor speed control  
z
DC servo and robot drives  
z
DC choppers  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
VGE(th)  
ICES  
IC = 250 µA, VCE = VGE  
2.5  
5.0  
V
VCE = V  
T = 25°C  
50  
µA  
VGE = 0CVES  
TJJ = 150°C  
1
100  
1.8  
mA  
nA  
V
IGES  
VCE = 0 V, VGE = 20 V  
IC = 24 A, VGE = 15 V  
VCE(sat)  
TJ = 25°C  
© 2004 IXYS All rights reserved  
DS99167(04/04)  
IXGP 30N60B2  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
IC = 24 A; VCE = 10 V,  
18  
26  
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
Cies  
Coes  
Cres  
1500  
115  
40  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
IC = 24 A, VGE = 15 V, VCE = 300 V  
Inductive load, TJ = 25°C  
Qg  
Qge  
Qgc  
66  
9
22  
nC  
nC  
nC  
td(on)  
tri  
td(off)  
tfi  
13  
15  
110  
82  
ns  
ns  
200 ns  
150 ns  
0.6 mJ  
Pins: 1 - Gate  
2 - Drain  
4 - Drain  
3 - Source  
IC = 24 A, VGE = 15 V  
VCE = 400 V, RG = 5 Ω  
Eoff  
0.32  
td(on)  
tri  
Eon  
td(off)  
tfi  
13  
17  
0.22  
200  
150  
0.9  
ns  
ns  
mJ  
ns  
ns  
mJ  
Inductive load, TJ = 125°C  
IC = 24 A, VGE = 15 V  
VCE = 400 V, RG = 5 Ω  
Eoff  
RthJC  
RthCH  
0.65 K/W  
K/W  
0.25  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,850,072  
4,835,592  
4,931,844  
4,881,106  
5,034,796  
5,017,508  
5,063,307  
5,049,961  
5,237,481  
5,187,117  
5,381,025  
5,486,715  
6,404,065B1 6,162,665  
6,534,343  
6,583,505  
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344  
IXGP 30N60B2  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
300  
250  
200  
150  
100  
50  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
VGE = 15V  
VGE = 15V  
13V  
13V  
11V  
9V  
11V  
9V  
7V  
5V  
7V  
5V  
0
0
0.5  
1
1.5  
2
2.5  
3
0
-50  
4
2
4
6
8
10  
12  
14 16  
18  
VC E - Volts  
VC E - Volts  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
VGE = 15V  
13V  
IC = 48A  
11V  
9V  
7V  
VGE = 15V  
IC = 24A  
IC = 12A  
5V  
0
-25  
0
25  
50  
75  
100 125 150  
0.5  
1
1.5  
2
2.5  
3
TJ - Degrees Centigrade  
VCE - Volts  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
250  
225  
200  
175  
150  
125  
100  
75  
4.2  
3.9  
3.6  
3.3  
3
TJ = 25ºC  
TJ = -40ºC  
25ºC  
125ºC  
IC = 48A  
24A  
12A  
2.7  
2.4  
2.1  
1.8  
1.5  
1.2  
50  
25  
0
5
6
7
8
9
10 11 12 13 14 15 16 17  
5
6
7
8
9
10  
11  
12  
13  
VG E - Volts  
VG E - Volts  
© 2004 IXYS All rights reserved  
IXGP 30N60B2  
Fig. 8. Dependence of Turn-Off  
Ene r gy on RG  
Fig. 7. Transconductance  
45  
40  
35  
30  
25  
20  
15  
10  
5
2.7  
2.4  
2.1  
1.8  
1.5  
1.2  
0.9  
0.6  
0.3  
0
TJ = -40ºC  
25ºC  
125ºC  
IC = 48A  
TJ = 125ºC  
VGE = 15V  
VCE = 400V  
IC = 24A  
IC = 12A  
0
0
25 50 75 100 125 150 175 200 225 250  
0
10  
20  
30  
40  
50  
60  
70  
80  
I C - Amperes  
R G - Ohms  
Fig. 10. Dependence of Turn-Off  
Energy on Temperature  
Fig. 9. Dependence of Turn-Off  
Ene r gy on IC  
2
1.8  
1.6  
1.4  
1.2  
1
2
1.8  
1.6  
1.4  
1.2  
1
RG = 5Ω  
RG = 5Ω  
VGE = 15V  
VCE = 400V  
V
GE = 15V  
VCE = 400V  
IC = 48A  
IC = 24A  
TJ = 125ºC  
TJ = 25ºC  
0.8  
0.6  
0.4  
0.2  
0
0.8  
0.6  
0.4  
0.2  
0
IC = 12A  
10  
15  
20  
25  
30  
35  
40  
45  
50  
25 35 45 55 65 75 85 95 105 115 125  
I C - Amperes  
TJ - Degrees Centigrade  
Fig. 11. Dependence of Turn-Off  
Switching Time on RG  
Fig. 12. Dependence of Turn-Off  
Switching Time on IC  
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
700  
600  
500  
400  
300  
200  
100  
td(off)  
td(off)  
fi  
TJ = 125ºC  
VGE = 15V  
VCE = 400V  
tfi - - - - - -  
t -  
- - - - -  
RG = 5Ω  
VGE = 15V  
VCE = 400V  
TJ = 125ºC  
IC = 12A  
IC = 24A  
TJ = 25ºC  
IC = 48A  
60  
0
10  
20  
30  
40  
50  
60  
70  
80  
10  
15  
20  
25  
30  
35  
40  
45  
50  
R G - Ohms  
I C - Amperes  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,850,072  
4,835,592  
4,931,844  
4,881,106  
5,034,796  
5,017,508  
5,063,307  
5,049,961  
5,237,481  
5,187,117  
5,381,025  
5,486,715  
6,404,065B1 6,162,665  
6,534,343  
6,583,505  
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344  
IXGP 30N60B2  
Fig. 13. Dependence of Turn-Off  
Switching Time on Temperature  
Fig. 14. Gate Charge  
220  
200  
180  
160  
140  
120  
100  
80  
15  
12  
9
VCE = 300V  
IC = 24A  
G = 10mA  
td(off)  
IC = 12A  
24A  
tfi - - - - - -  
I
RG = 5Ω  
VGE = 15V  
VCE = 400V  
48A  
6
IC = 48A  
24A  
3
12A  
0
25 35 45 55 65 75 85 95 105 115 125  
0
10  
20  
30  
40  
50  
60  
70  
TJ - Degrees Centigrade  
Q G - nanoCoulombs  
Fig. 15. Capacitance  
10000  
1000  
100  
f = 1 MHz  
C
ies  
C
oes  
C
res  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
VC E - Volts  
Fig. 16. Maximum Transient Thermal Resistance  
1.0  
0.5  
0.1  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2004 IXYS All rights reserved  
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