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IXGQ90N33TC

型号：

IXGQ90N33TC

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

144 K

下载PDF手册
Trench Gate,  
High Speed,  
IGBTs  
IXGA90N33TC  
IXGQ90N33TC  
IXGQ90N33TCD1  
VCES  
ICP  
= 330V  
= 360A  
VCE(sat) ≤ 1.80V  
For PDP Applications  
90N33TCD1  
90N33TC  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
TJ = 25°C to 150°C  
330  
V
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
TO-263 AA (IXGA)  
IC25  
TC= 25°C (Chip Capability)  
Lead Current Limit  
TC = 110°C  
90  
75  
38  
60  
A
A
A
A
G
E
IC(RMS)  
IC110  
ICP  
C (Tab)  
TC < 150°C, tp < 10μs  
ICP  
TC < 150°C, tp < 10μs, Duty cycle < 1%  
360  
A
TO-3P (IXGQ)  
PC  
TC = 25°C  
200  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
G
C
E
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
C (Tab)  
G = Gate  
E = Emitter  
C
= Collector  
Md  
Mounting Torque (TO-3P)  
1.13/10  
Nm/lb.in.  
Tab = Collector  
Weight  
TO-263  
TO-3P  
2.5  
5.5  
g
g
Features  
Symbol  
Test Conditions  
Characteristic Values  
• Low VCE(sat)  
- for minimum On-State Conduction  
Losses  
(TJ = 25°C, Unless Otherwise Specified  
Min.  
330  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
• Fast Switching  
5.0  
1
μA  
Applications  
TJ = 125°C  
200 μA  
• PDP Screen Drivers  
IGES  
VCE = 0V, VGE = ±20V  
±200 nA  
VCE(sat)  
VGE = 15V, IC = 20A, Note 1  
IC = 45A  
1.40  
1.80  
V
V
V
V
V
1.54  
1.54  
1.82  
1.95  
TJ = 125°C  
TJ = 125°C  
IC = 90A  
© 2011 IXYS CORPORATION, All Rights Reserved  
DS99754B (07/11)  
IXGQ90N33TCD1 IXGA90N33TC  
IXGQ90N33TC  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-263 Outline  
Min.  
Typ.  
Max.  
gfS  
IC = 45A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
40  
65  
S
Cies  
Coes  
Cres  
2320  
180  
21  
pF  
pF  
pF  
Qg  
69  
15  
13  
nC  
1. Gate  
2. Collector  
3. Emitter  
4. Collector  
Qge  
Qgc  
IC = 45A, VGE = 15V, VCE = 0.5 • VCES  
nC  
nC  
Bottom Side  
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
13  
30  
38  
49  
ns  
Resistive Switching Times, TJ = 25°C  
IC = 45A, VGE = 15V  
ns  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
ns  
ns  
VCE = 240V, RG = 5Ω  
A
b
b2  
4.06  
0.51  
1.14  
4.83  
0.99  
1.40  
.160  
.020  
.045  
.190  
.039  
.055  
c
c2  
0.40  
1.14  
0.74  
1.40  
.016  
.045  
.029  
.055  
13  
28  
50  
74  
ns  
ns  
ns  
ns  
Resistive Switching Times, TJ = 125°C  
IC = 45A, VGE = 15V  
D
D1  
8.64  
8.00  
9.65  
8.89  
.340  
.280  
.380  
.320  
E
9.65  
10.41  
.380  
.405  
VCE = 240V, RG = 5Ω  
E1  
e
L
L1  
L2  
L3  
L4  
6.22  
2.54  
14.61  
2.29  
1.02  
1.27  
0
8.13  
BSC  
15.88  
2.79  
1.40  
1.78  
0.13  
.270  
.320  
.100 BSC  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.005  
RthJC  
RthCS  
0.62 °C/W  
°C/W  
TO-3P  
0.21  
TO-3P Outline  
Reverse Diode  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max  
VF  
IF = 20A, VGE = 0V, Note 1  
2.0  
V
RthJC  
2.5 °C/W  
1 = Gate  
2,4  
= Collector  
3 = Emitter  
Note:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXGQ90N33TCD1 IXGA90N33TC  
IXGQ90N33TC  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
300  
270  
240  
210  
180  
150  
120  
90  
V
= 15V  
GE  
13V  
11V  
V
= 15V  
GE  
13V  
11V  
9V  
7V  
9V  
7V  
60  
30  
0
0
-50  
4
1
2
3
4
5
6
7
8
9
125  
7
10  
150  
7.5  
0
0
5
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
2
2.2  
2.2  
15  
VCE - Volts  
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.4  
1.3  
1.2  
1.1  
1
V
= 15V  
GE  
V
= 15V  
GE  
13V  
11V  
9V  
I
= 90A  
C
I
= 45A  
= 23A  
C
C
7V  
0.9  
0.8  
0.7  
I
5V  
-25  
0
25  
50  
75  
100  
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
2
TJ - Degrees Centigrade  
VCE - Volts  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
140  
120  
100  
80  
3.2  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
T
J
= 25ºC  
I
= 90A  
C
T
J
= 125ºC  
25ºC  
- 40ºC  
45A  
23A  
60  
40  
20  
0
4.5  
5
5.5  
6
6.5  
6
7
8
9
10  
11  
12  
13  
14  
VGE - Volts  
VGE - Volts  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXGQ90N33TCD1 IXGA90N33TC  
IXGQ90N33TC  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
T
J
= - 40ºC  
25ºC  
V
= 165V  
CE  
I
I
= 45A  
C
G
= 10 mA  
125ºC  
6
4
2
0
0
20  
40  
60  
80  
100  
120  
140  
0
10  
20  
30  
40  
50  
60  
70  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Reverse-Bias Safe Operating Area  
Fig. 10. Capacitance  
10,000  
1,000  
100  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
f = 1 MHz  
C
ies  
C
oes  
T
= 150ºC  
J
R = 20  
Ω
dV / dT < 10V / ns  
G
C
res  
10  
50  
100  
150  
200  
250  
300  
350  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Forward-Bias Safe Operating Area  
1000  
100  
10  
1.00  
0.10  
0.01  
V
Limit  
CE  
(sat)  
1µs  
10µs  
100µs  
1ms  
T
= 150ºC  
= 25ºC  
Single Pulse  
J
T
C
1
1
10  
100  
1000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
VCE - Volts  
Ions
Pulse Width - Seconds  
IXGQ90N33TCD1 IXGA90N33TC  
IXGQ90N33TC  
Fig. 13. Resistive Turn-on Rise Time  
vs. Junction Temperature  
Fig. 14. Resistive Turn-on Rise Time  
vs. Collector Current  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
R
G
= 5  
Ω
R = 5  
Ω
G
V
V
= 15V  
GE  
CE  
V
V
= 15V  
GE  
CE  
= 240V  
= 240V  
T = 25ºC  
J
I
= 90A  
C
T = 125ºC  
J
I
= 45A  
65  
C
25  
35  
45  
55  
75  
85  
95  
105 115 125  
20 25 30 35 40 45 50 55 60 65 70 75 80 85 90  
IC - Amperes  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off Switching Times  
vs. Junction Temperature  
Fig. 16. Resistive Turn-on Switching Times  
vs. Gate Resistance  
75  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
13  
12  
95  
60  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
t f  
R
td(off)  
- - - -  
= 5 , V = 15V  
t r  
td(on)  
- - - -  
T = 125ºC, V = 15V  
90  
85  
80  
75  
70  
65  
60  
55  
50  
45  
57  
54  
51  
48  
45  
42  
39  
36  
33  
30  
Ω
G
GE  
J
GE  
V
= 240V  
CE  
V
= 240V  
CE  
I
= 90A, 45A  
C
I
= 90A, 45A  
C
4
6
8
10  
12  
14  
16  
18  
20  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off Switching Times  
vs. Collector Current  
Fig. 19. Resistive Turn-off Switching Times  
vs. Gate Resistance  
120  
110  
100  
90  
60  
57  
54  
51  
48  
45  
42  
39  
36  
33  
30  
120  
115  
110  
105  
100  
95  
130  
120  
110  
100  
90  
t f  
td(off) - - - -  
T = 125ºC, V = 15V  
t f  
R
td(off)  
- - - -  
= 5 , V = 15V  
J
GE  
Ω
G
GE  
V
= 240V  
CE  
T = 125ºC  
J
V
= 240V  
CE  
I
= 45A  
C
80  
70  
80  
60  
90  
70  
I
= 90A  
C
50  
85  
60  
T = 25ºC  
J
40  
80  
50  
30  
75  
40  
20  
70  
30  
20 25 30 35 40 45 50 55 60 65 70 75 80 85 90  
IC - Amperes  
4
6
8
10  
12  
14  
16  
18  
20  
RG - Ohms  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXYS REF: G_90N33TC (4G) 5-30-07-C  
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