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IXFH42N65X2A

型号：

IXFH42N65X2A

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

177 K

下载PDF手册
Advance Technical Information  
X2-Class HiPerFETTM  
Power MOSFET  
VDSS = 650V  
ID25 = 42A  
RDS(on) 72m  
IXFH42N65X2A  
AEC Q101 Qualified  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-247  
G
D
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
S
D (Tab)  
D = Drain  
TJ = 25C to 150C  
650  
650  
V
V
G = Gate  
S = Source  
VDGR  
TJ = 25C to 150C, RGS = 1M  
Tab = Drain  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
42  
90  
A
A
IA  
TC = 25C  
TC = 25C  
10  
A
Features  
EAS  
500  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
50  
V/ns  
W
International Standard Package  
Low RDS(ON) and QG  
Avalanche Rated  
660  
TJ  
-55 ... +150  
150  
C  
C  
C  
Low Package Inductance  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Advantages  
High Power Density  
Easy to Mount  
Md  
Mounting Torque  
1.13 / 10  
6
Nm/lb.in  
g
Weight  
Space Savings  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 4mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
650  
V
V
3.5  
5.5  
100 nA  
IDSS  
10 A  
TJ = 125C  
1.5 mA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
72 m  
DS100810(03/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXFH42N65X2A  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXFH) Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
D
A
A
A2  
0P  
+
B
O 0K M D B M  
E
+
A2  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
Gate Input Resistance  
14  
23  
S
Q
S
D2  
+
4
R
RGi  
0.9  
D1  
D
0P1  
Ciss  
Coss  
Crss  
4.6  
3.0  
1.8  
nF  
nF  
pF  
1
2
3
ixys option  
C
L1  
VGS = 0V, VDS = 25V, f = 1MHz  
E1  
L
Effective Output Capacitance  
A1  
b
b2  
Co(er)  
Co(tr)  
165  
650  
pF  
pF  
c
Energy related  
Time related  
VGS = 0V  
VDS = 0.8 • VDSS  
b4  
PINS: 1 - Gate  
e
+
O
2, 4 - Drain  
3 - Source  
J
M
C
A M  
td(on)  
tr  
td(off)  
tf  
36  
60  
46  
12  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
RG = 3(External)  
Qg(on)  
Qgs  
80  
30  
29  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.19 C/W  
C/W  
0.21  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
42  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
168  
1.4  
V
trr  
QRM  
IRM  
170  
1.5  
17.5  
ns  
IF = 21A, -di/dt = 100A/μs  
μC  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXFH42N65X2A  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
42  
36  
30  
24  
18  
12  
6
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V = 10V  
GS  
V
= 10V  
GS  
9V  
8V  
9V  
8V  
7V  
6V  
7V  
6V  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 21A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
42  
36  
30  
24  
18  
12  
6
3.8  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
GS  
V
= 10V  
GS  
9V  
I
= 42A  
D
8V  
7V  
I
= 21A  
D
6V  
5V  
0
0
1
2
3
4
5
6
7
8
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 21A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
= 10V  
GS  
BV  
= 125oC  
DSS  
T
J
T
J
= 25oC  
V
GS(th)  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
TJ - Degrees Centigrade  
ID - Amperes  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXFH42N65X2A  
Fig. 7. Maxing Drain Current vs. Case Temperature  
Fig. 8. Input Admittance  
50  
40  
30  
20  
10  
0
50  
40  
30  
20  
10  
0
T
J
= 125oC  
25oC  
- 40oC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
Fig. 9. Transconductance  
180  
160  
140  
120  
100  
80  
45  
40  
35  
30  
25  
20  
15  
10  
5
T
J
= - 40oC  
25oC  
T
J
= 125oC  
125oC  
60  
T
J
= 25oC  
40  
20  
0
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
1.3  
1.4  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
V SD - Volts  
I D - Amperes  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
100,000  
10,000  
1,000  
100  
10  
8
V
= 325V  
DS  
I
I
= 21A  
D
G
C
iss  
= 10mA  
6
C
oss  
4
2
10  
= 1 MHz  
f
C
rss  
0
1
0
10  
20  
30  
40  
50  
60  
70  
80  
1
10  
100  
1000  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFH42N65X2A  
Fig. 13. Output Capacitance Stored Energy  
Fig. 14. Forward-Bias Safe Operating Area  
35  
30  
25  
20  
15  
10  
5
1000  
100  
10  
R
Limit  
)
DS(  
on  
25μs  
100μs  
1
T = 150oC  
J
T
C
= 25oC  
1ms  
Single Pulse  
0
0.1  
0
100  
200  
300  
400  
500  
600  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
aaaaa  
0.3  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_42N65X2A(X6-S701) 3-08-17  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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