IXFH 96N20P
IXFV 96N20P IXFV 96N20PS
Symbol
gfs
TestConditions
Characteristic Values
TO-247 (IXFH) Outline
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
40
52
S
Ciss
Coss
Crss
4800
1020
270
pF
pF
pF
1
2
3
td(on)
tr
td(off)
tf
28
30
75
30
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
Terminals: 1 - Gate 2 - Drain
3 - Source TAB - Drain
RG = 4 Ω (External)
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Qg(on)
Qgs
145
30
nC
nC
nC
A
A12
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
A
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
(TO-247, PLUS220)
Qgd
80
b
b12
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
b
RthJC
RthCK
0.25 K/W
K/W
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
0.21
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
19.81 20.32
4.50
.780 .800
.177
Source-Drain Diode
Characteristic Values
L1
(TJ = 25°C, unless otherwise specified)
∅P 3.55
3.65
.140 .144
Symbol
IS
TestConditions
Min.
typ.
Max.
Q
5.89
4.32
6.40 0.232 0.252
R
S
5.49
.170 .216
242 BSC
VGS = 0 V
96
A
A
V
6.15 BSC
ISM
Repetitive
240
1.5
PLUS220 (IXFV) Outline
E
A
E1
L2
VSD
IF = IS, VGS = 0 V,
E1
A1
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
D1
trr
IF = 25 A
120
0.7
7
200 ns
D
QRM
IRM
-di/dt = 100 A/µs
VR = 100 V
µC
L3
L1
A
L
PLUS220SMD (IXFV__S) Outline
c
A
E
3X b
E1
A2
L2
A1
2X e
E1
Terminals:
1 - Gate 2 - Drain
3 - Source TAB - Drain
A
D
A1
A2
A3
b
A3
L4
L3
A
A1
A2
b
L
L1
c
2X b
c
e
D
c
D
A2
D1
E
D1
E
E1
e
E1
e
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
L
L1
L2
L3
L4
L
L1
L2
L3
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
oneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
