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IXFN170N65X2

型号：

IXFN170N65X2

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

133 K

下载PDF手册
X2-Class HiPerFETTM  
Power MOSFET  
VDSS = 650V  
ID25 = 170A  
RDS(on) 13m  
IXFN170N65X2  
D
S
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
G
S
miniBLOC, SOT-227  
E153432  
S
G
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
650  
650  
V
V
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
S
D
ID25  
IDM  
TC = 25C  
170  
340  
A
A
TC = 25C, Pulse Width Limited by TJM  
G = Gate  
S = Source  
D = Drain  
IA  
EAS  
TC = 25C  
TC = 25C  
15  
5
A
J
PD  
TC = 25C  
1170  
50  
W
dv/dt  
IS IDM, VDD VDSS, TJ 150°C  
V/ns  
Features  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
International Standard Package  
miniBLOC, with Aluminium Nitride  
Isolation  
Isolation Voltage 2500 V~  
High Current Handling Capability  
Fast Intrinsic Diode  
VISOL  
50/60 Hz, RMS  
IISOL 1mA  
t = 1 minute  
t = 1 second  
2500  
3000  
V~  
V~  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in  
Nm/lb.in  
Avalanche Rated  
Low RDS(on)  
Weight  
30  
g
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
650  
V
V
Applications  
3.5  
5.0  
Switch-Mode and Resonant-Mode  
200 nA  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
IDSS  
50 A  
5 mA  
TJ = 125C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
13 m  
© 2016 IXYS CORPORATION, All Rights Reserved  
DS100692A(03/16)  
IXFN170N65X2  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B (IXFN) Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 60A, Note 1  
Gate Input Resistance  
55  
90  
S
RGi  
0.56  
Ciss  
Coss  
Crss  
27.0  
15.8  
12.4  
nF  
nF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
Effective Output Capacitance  
Co(er)  
Co(tr)  
780  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
VDS = 0.8 • VDSS  
3400  
td(on)  
tr  
td(off)  
tf  
60  
15  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
(M4 screws (4x) supplied)  
V
133  
6
RG = 1(External)  
Qg(on)  
Qgs  
434  
166  
137  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.107 C/W  
C/W  
0.05  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
170  
680  
1.4  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
trr  
270  
3.1  
ns  
μC  
A
IF = 85A, -di/dt = 100A/s  
QRM  
IRM  
VR = 100V, VGS = 0V  
22.6  
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFN170N65X2  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
180  
160  
140  
120  
100  
80  
300  
250  
200  
150  
100  
50  
V
= 10V  
V
= 10V  
GS  
GS  
9V  
9V  
8V  
7V  
8V  
7V  
60  
6V  
5V  
40  
6V  
5V  
20  
0
0
0
0.5  
1
1.5  
2
2.5  
0
5
10  
15  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 85A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
180  
160  
140  
120  
100  
80  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
9V  
GS  
V
= 10V  
GS  
8V  
I
= 170A  
D
7V  
6V  
I
= 85A  
D
60  
40  
5V  
4V  
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
1
2
3
4
5
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 85A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
V
= 10V  
GS  
T = 125ºC  
J
BV  
DSS  
T = 25ºC  
J
V
GS(th)  
0
50  
100  
150  
200  
250  
300  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
TJ - Degrees Centigrade  
ID - Amperes  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXFN170N65X2  
Fig. 7. Maximum Drain Current vs.  
Case Temperature  
Fig. 8. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
180  
160  
140  
120  
100  
80  
T
J
= 125ºC  
25ºC  
- 40ºC  
60  
60  
40  
40  
20  
20  
0
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 9. Transconductance  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
180  
160  
140  
120  
100  
80  
300  
250  
200  
150  
100  
50  
T
J
= - 40ºC  
25ºC  
125ºC  
T
J
= 125ºC  
60  
T
J
= 25ºC  
40  
20  
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
ID - Amperes  
VSD - Volts  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
10  
8
1,000,000  
100,000  
10,000  
1,000  
100  
V
= 325V  
DS  
I
I
= 85A  
D
G
C
C
iss  
= 10mA  
6
oss  
4
2
10  
C
rss  
= 1 MHz  
f
0
1
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
1
10  
100  
1000  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFN170N65X2  
Fig. 14. Forward-Bias Safe Operating Area  
Fig. 13. Output Capacitance Stored Energy  
180  
160  
140  
120  
100  
80  
1000  
100  
10  
R
DS(  
on  
Limit  
)
25µs  
100µs  
60  
1
40  
T = 150ºC  
J
1ms  
T
= 25ºC  
C
20  
10ms  
Single Pulse  
0.1  
0
10  
100  
1,000  
0
100  
200  
300  
400  
500  
600  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
aaaa  
0.2  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_170N65X2(C9-S602) 12-01-15  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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